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FMBM5401 — PNP General-Purpose Amplifier Publication Order Number: FMBM5401/D © 2005 Semiconductor Components Industries, LLC. October-2017,Rev. FMBM5401 PNP General-Purpose Amplifier

Ordering Information

Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T A = 25°C unless otherwise noted. Notes: 1.These ratings are based on a maximum junction temperature of 150°C. 2.These are steady-state li mits. ON Semiconductor should be consulted on applications involving pulsed or low- duty-cycle operations. Thermal Characteristics(3) Values are at TA = 25°C unless otherwise noted. Note: 3. Device mounted on a 1 in 2 pad of 2 oz copper. Part Number Marking Package Packing Method FMBM5401 4S2 SSOT 6L Tape and Reel Symbol Parameter Value Unit VCEO Collector-Emitter Voltage -150 V VCBO Collector-Base Voltage -160 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -600 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Parameter Value Unit PD Total Power Dissipation 700 mW RθJA Thermal Resistance, Junction-to-Ambient, Total 180 °C/W

Description

This device has matched dies in SuperSOT-6. SuperSOTTM-6 Mark: .4S2 pin #1

FMBM5401 — PNP General-Purpose Amplifier www.onsemi.com

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted. Note: 4. Pulse test: Pulse width ≤ 300 ms, duty cycle ≤ 2% Symbol Parameter Conditions Min. Max. Unit BVCEO Collector-Emitter Breakdown Voltage(4) IC = -1.0 mA, IB = 0 -150 V BVCBO Collector-Base Breakdown Voltage I C = -100 μA, IE = 0 -160 V BVEBO Emitter-Base Breakdown Voltage I E = -10 μA, IC = 0 -5.0 V ICBO Collector Cut-Off Current VCB = -120 V, IE = 0 -50 nA VCB = -120 V, IE = 0, TA = 100°C -50 μA IEBO Emitter Cut-Off Current VEB = -3.0 V, IC = 0 -50 nA hFE1 DC Current Gain(4) VCE = -5 V, IC = -1 mA 50 DIVID1 Variation Ratio of hFE1 Between Die 1 and Die 2 hFE1(Die1) / hFE1(Die2) 0.9 1.1 hFE2 DC Current Gain(4) VCE = -5 V, IC = -10 mA 60 240 DIVID2 Variation Ratio of hFE2 Between Die 1 and Die 2 hFE2(Die1) / hFE2(Die2) 0.95 1.05 hFE3 DC Current Gain(4) VCE = -5 V, IC = -50 mA 50 DIVID3 Variation Ratio of hFE3 Between Die 1 and Die 2 hFE3(Die1) / hFE3(Die2) 0.9 1.1 VCE(sat) Collector-Emitter Saturation Voltage (4) IC = -10 mA, IB = -1 mA -0.2 V IC = -50 mA, IB = -5 mA -0.5 VBE(sat) Base-Emitter Saturation Voltage (4) IC = -10 mA, IB = -1 mA -1 V IC = -50 mA, IB = -5 mA -1 VBE(on) Base-Emitter On Voltage (4) VCE = -5 V, IC = -10 mA -1 V DEL Difference of VBE(on) Between Die1 and Die 2 VBE(on)(Die1) - VBE(on)(Die2) -8 8 mV fT Current Gain Bandwidth Product VCE = -10 V, IC = -10 mA, f = 100 MHz 100 300 MHz Cob Output Capacitance VCB = -10 V, IE = 0, f = 1 MHz 6.0 pF NF Noise Figure VCE = -5.0 V, IC = -250 μA, RS = 1.0 kΩ, f = 10 Hz to 15.7 kHz 8.0 dB

FMBM5401 — PNP General-Purpose Amplifier www.onsemi.com Typical Performance Characteristics (Continued) F i gu r e 7 . In p ut a n d O u tp u t C a pa ci t a n ce vs. Reverse Voltage 0.1 1 10 100 V - REVERSE BIAS VOLTAGE(V) CAPACIT ANCE (pF) C f = 1.0 MHz R C cb eb

Figure 8. 6-LEAD, SUPERSOT6, JEDEC MO-193, 1.6MM WIDE

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