FMBM5401

FMBM5401 FAIRCHILD | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 6

Technical content

©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FMBM5401 Rev. A FMBM5401 PNP General Purpose Amplifier FMBM5401 PNP General Purpose Amplifier

• This device has matched dies in SuperSOT-6. Absolute Maximum Ratings* * These ratings are limiting values above which the serviceability of any semiconductor device may e impaired. Notes: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -150 V VCBO Collector-Base Voltage -160 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -600 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C Symbol Parameter Conditions Min. Max Units Off Characteristics BVCEO Collector-Emitter Breakdown Voltage * I C = -1.0mA, IB = 0 -150 V BVCBO Collector-Base Breakdown Voltage I C = -100µA, IE = 0 -160 V BVEBO Emitter-Base Breakdown Voltage I C = -10µA, IC = 0 -5.0 V ICBO Collector Cut-off Current V CB = -120V, IE = 0 VCB = -120V, IE = 0, Ta = 100°C -50 -50 nA µA IEBO Emitter Cut-off Current V EB = -3.0V, IC = 0 -50 nA On Characteristics* hFE1 DC Current Gain V CE = -5V, IC = -1mA 50 DIVID1 Variation Ratio of h FE1 Between Die 1 and Die 2 h FE1(Die1)/hFE1(Die2) 0.9 1.1 hFE2 DC Current Gain V CE = -5V, IC = -10mA 60 240 DIVID2 Variation Ratio of h FE2 Between Die 1 and Die 2 h FE2(Die1)/hFE2(Die2) 0.95 1.05 hFE3 DC Current Gain V CE = -5V, IC = -50mA 50 DIVID3 Variation Ratio of h FE3 Between Die 1 and Die 2 h FE3(Die1)/hFE3(Die2) 0.9 1.1 SuperSOTTM-6 Mark: .4S2 pin #1

2 www.fairchildsemi.com FMBM5401 Rev. A FMBM5401 PNP General Purpose Amplifier Electrical Characteristics (Continued) TC = 25°C unless otherwise noted * Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0% Thermal Characteristics TC = 25°C unless otherwise noted * Device mounted on a 1 in 2 pad of 2 oz coppe Symbol Parameter Conditions Min. Max Units VCE(sat) Collector-Emitter Saturation Voltage I C = -10mA, IB = -1mA IC = -50mA, IB = -5mA -0.2 -0.5 V V VBE(sat) Base-Emitter Saturation Voltage I C = -10mA, IB = -1mA IC = -50mA, IB = -5mA V V VBE(on) Base-Emitter On Voltage V CE = -5V, IC = -10mA -1 V DEL Difference of V BE(on) Between Die1 and Die 2 V BE(on)(Die1)-VBE(on)(Die2) -8 8 mV Small Signal Characteristics fT Current Gain Bandwidth Product V CE = -10V, IC = -10mA f = 100MHz 100 300 MHz Cob Output Capacitance V CB = -10V, IE = 0, f = 1MHz 6.0 pF NF Noise Figure V CE = -5.0V, IC = -250µA, RS = 1.0KΩ , f = 10Hz to 15.7KHz 8.0 dB Symbol Parameter Value Units PD Total Device Dissipation 700 mW RθJA Thermal Resistance, Junction to Ambient, Total 180 °C/W

4 www.fairchildsemi.com FMBM5401 Rev. A FMBM5401 PNP General Purpose Amplifier Typical Performance Characteristics (Continued) Figure 7.Input and Output Capacitance vs Reverse Voltage 1E-4 1E-3 0.01 0.1 1 100 150 200 - 40 o C o C 125 o C VCE = 5V hFE - TYPICAL PULSED CURRENT GAIN IC - COLLECTOR CURRENT (A)

5 www.fairchildsemi.com FMBM5401 Rev. A FMBM5401 PNP General Purpose Amplifier Mechanical Dimensions SuperSOTTM-6 Dimensions in Millimeters

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intend ed to be an exhaustive list of all such trademarks. 6 www.fairchildsemi.com FMBM5401 Rev. A FMBM5401 PNP General Purpose Amplifier DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ Rev. I15