FMBL1G200US60 FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • UL Certified No. E209204
  • Short circuit rated 10us @ T C = 100°C, VGE = 15V
  • High speed switching
  • Low saturation voltage : V CE(sat) = 2.2 V @ IC = 200A
  • High input impedance
  • Fast & soft anti-parallel FWD Application
  • Boost (Step Up) Converter Internal Circuit Diagram E1/C2 G2 E2 Package Code : 7PM-BB

©2001 Fairchild Semiconductor Corporation FMBL1G200US60 Rev. A FMBL1G200US60 Electrical Characteristics of IGBT TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage V GE = 0V, IC = 250uA 600 -- -- V ∆BVCES/ ∆TJ Temperature Coeff. of Breakdown Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/ °C ICES Collector Cut-Off Current V CE = VCES, VGE = 0V -- -- 250 uA IGES G-E Leakage Current V GE = VGES, VCE = 0V -- -- ± 100 nA On Characteristics VGE(th) G-E Threshold Voltage I C = 0V, IC= 200mA 5.0 -- 8.5 V VCE(sat) Collector to Emitter Saturation Voltage IC = 200A, VGE = 15V -- 2.2 2.8 V Dynamic Characteristics Cies Input Capacitance VCE = 30V, VGE = 0V, f = 1MHz -- 14600 -- pF Coes Output Capacitance -- 2170 -- pF Cres Reverse Transfer Capacitance -- 500 -- pF Switching Characteristics td(on) Turn-On Delay Time VCC = 300 V, IC = 200A, RG = 1.8Ω , VGE = 15V Inductive Load, TC = 25°C -- 120 -- ns tr Rise Time -- 75 -- ns td(off) Turn-Off Delay Time -- 200 250 ns tf Fall Time -- 90 200 ns Eon Turn-On Switching Loss -- 3.6 -- mJ Eoff Turn-Off Switching Loss -- 8.7 -- mJ Ets Total Switching Loss -- 12.3 -- mJ td(on) Turn-On Delay Time VCC = 300 V, IC = 200A, RG = 1.8Ω , VGE = 15V Inductive Load, TC = 125°C -- 220 -- ns tr Rise Time -- 100 -- ns td(off) Turn-Off Delay Time -- 290 -- ns tf Fall Time -- 210 -- ns Eon Turn-On Switching Loss -- 4.8 -- mJ Eoff Turn-Off Switching Loss -- 11.8 -- mJ Ets Total Switching Loss -- 16.6 -- mJ Tsc Short Circuit Withstand Time VCC = 300 V, VGE = 15V @ TC = 100°C 10 -- -- us Qg Total Gate Charge VCE = 300 V, IC = 200A, VGE = 15V -- 820 900 nC Qge Gate-Emitter Charge -- 170 -- nC Qgc Gate-Collector Charge -- 365 -- nC

©2001 Fairchild Semiconductor Corporation FMBL1G200US60 Rev. A FMBL1G200US60 Electrical Characteristics of DIODE TC = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units VFM Diode Forward Voltage I F = 200A trr Diode Reverse Recovery Time IF = 200A di / dt = 400 A/us TC = 25°C -- 90 130 nsTC = 100°C -- 130 -- Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge TC = 25°C -- 855 1600 nCTC = 100°C -- 1625 -- Symbol Parameter Typ. Max. Units RθJC Junction-to-Case (IGBT Part, per 1/2 Module) -- 0.15 °C/W RθJC Junction-to-Case (DIODE Part, per 1/2 Module) -- 0.35 °C/W RθCS Case-to-Sink (Conductive grease applied) 0.03 -- °C/W Weight Weight of Module -- 270 g

©2001 Fairchild Semiconductor Corporation FMBL1G200US60 Rev. A FMBL1G200US60 048 1 2 1 6 2 0 Common Emitter TC = 125 ℃ 400A 200A IC = 100A Collector - Emitter Voltage, V CE [V] Gate - Emitter Voltage, V GE [V] 048 1 2 1 6 2 0 Common Emitter TC = 25℃ 400A 200A IC = 100A Collector - Emitter Voltage, V CE [V] Gate - Emitter Voltage, V GE [V] 120 150 180 210 240 0.1 1 10 100 1000 Duty cycle : 50% TC = 100 ℃ Power Dissipation = 250W VCC = 300V Load Current : peak of square wave Frequency [Khz] Load Current [A] 03 0 6 0 9 0 1 2 0 1 5 0 400A 200A IC = 100A Common Emitter VGE = 15V Collector - Emitter Voltage, V CE [V] Case Temperature, T C [℃] 0.3 1 10 20 100 150 200 250 300 350 400 Common Emitter VGE = 15V TC = 25 ℃ TC = 125℃ Collector Current, I C [A] Collector - Emitter Voltage, V CE [V] 02468 100 150 200 250 300 350 400 20V 12V15V VGE = 10V Common Emitter TC = 25℃ Collector Current, I C [A] Collector - Emitter Voltage, V CE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency Fig 5. Saturation Voltage vs. VGE Fig 6. Saturation Voltage vs. VGE

©2001 Fairchild Semiconductor Corporation FMBL1G200US60 Rev. A FMBL1G200US60 11 0 5 0 1000 10000 100000 Eoff Eon Common Emitter VCC = 300V, V GE = ± 15V IC = 200A TC = 25 ℃ TC = 125℃ Switching Loss [uJ] Gate Resistance, R G [Ω ] 11 0 5 0 100 1000 3000 Tf Tf Toff Common Emitter VCC = 300V, V GE = ± 15V IC = 200A TC = 25 ℃ TC = 125 ℃ Switching Time [ns] Gate Resistance, R G [Ω ] 30 40 60 80 100 120 140 160 180 200 100 1000 Toff Tf Common Emitter VCC = 300V, V GE = ± 15V RG = 1.8 Ω TC = 25 ℃ TC = 125 ℃ Switching Time [ns] Collector Current, I C [A] 30 40 60 80 100 120 140 160 180 200 100 1000 Ton Tr Common Emitter VCC = 300V, V GE = ± 15V RG = 1.8 Ω TC = 25 ℃ TC = 125 ℃ Switching Time [ns] Collector Current, I C [A] 11 0 5 0 100

1000 Common Emitter

VCC = 300V, V GE = ± 15V IC = 200A TC = 25 ℃ TC = 125℃ Ton Tr Switching Time [ns] Gate Resistance, R G [Ω ] 0.5 1 10 30 5000 10000 15000 20000 25000 30000 35000 40000 Cres Coes Cies Common Emitter VGE = 0V, f = 1MHz TC = 25℃ Capacitance [pF] Collector - Emitter Voltage, V CE [V] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance Fig 11. Turn-On Characteristics vs. Collector Current Fig 12. Turn-Off Characteristics vs. Collector Current

©2001 Fairchild Semiconductor Corporation FMBL1G200US60 Rev. A FMBL1G200US60 1E-3 0.01 0.1 TC=25℃ IGBT : DIODE : Thermal Response, Zthjc [℃/W] Rectangular Pulse Duration [sec] 0 100 200 300 400 500 600 700 100 1000 Single Nonrepetitive Pulse T J ≤ 125℃ VGE = 15V RG = 1.8 Ω Collector Current, I C [A] Collector-Emitter Voltage, V CE [V] 1 10 100 1000 100 1000 Safe Operating Area VGE = 20V, T C = 100 o C Collector Current, I C [A] Collector-Emitter Voltage, V CE [V] 0.3 1 10 100 1000 100 1000 Single Nonrepetitive Pulse T C = 25℃ Curves must be derated linerarly with increase in temperature 50us 100us DC Operation IC MAX. (Continuous) IC MAX. (Pulsed) Collector Current, I C [A] Collector-Emitter Voltage, V CE [V] 0 100 200 300 400 500 600 700 800 900 200 V VCC = 100 V 300 V Common Emitter RL = 1.5 Ω TC = 25 ℃ Gate - Emitter Voltage, V GE [ V ] Gate Charge, Qg [ nC ] 30 40 60 80 100 120 140 160 180 200 100 1000 10000 30000 Eoff Eon Common Emitter VCC = 300V, V GE = ± 15V RG = 1.8 Ω TC = 25 ℃ TC = 125 ℃ Switching Loss [uJ] Collector Current, I C [A] Fig 14. Gate Charge CharacteristicsFig 13. Switching Loss vs. Collector Current Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics Fig 17. RBSOA Characteristics Fig 18. Transient Thermal Impedance

©2001 Fairchild Semiconductor Corporation FMBL1G200US60 Rev. A FMBL1G200US60 0 40 80 120 160 200 Trr Common Cathode di/dt = 400A/ ㎲ TC = 25 ℃ TC = 100℃ Irr Peak Reverse Recovery Current, I rr [A] Reverse Recovery Time, T rr [x10ns] Forward Current, I F [A] 01234 100 200 300 400 500 Common Cathode VGE = 0V TC = 25 ℃ TC = 125 ℃ Forward Current, I F [A] Forward Voltage, V F [V] Fig 20. Reverse Recovery CharacteristicsFig 19. Forward Characteristics

©2001 Fairchild Semiconductor Corporation FMBL1G200US60 Rev. A FMBL1G200US60 Package Dimension 7PM-BB (FS PKG CODE BE) Dimensions in Millimeters

©2001 Fairchild Semiconductor Corporation TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H3 ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET VCX™ STAR*POWER is used under license