FMBA14 FAIRCHILD | Alldatasheet
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NPN Multi-Chip Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Symbol Parameter Value Units VCES Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector Current - Continuous 1.2 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Discrete POWER & Signal Technologies FMBA14 Absolute Maximum Ratings* TA = 25°C unless otherwise noted 1998 Fairchild Semiconductor Corporation Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units FMBA14 PD Total Device Dissipation Derate above 25°C 700 5.6 mW mW/ °C R θJA Thermal Resistance, Junction to Ambient 180 °C/W SuperSOT -6 Mark: .1N pin #1
Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Typ Max Units V(BR)CES Collector-Emitter Breakdown VoltageIC = 100 µA, IB = 0 30 V ICBO Collector-Cutoff Current V CB = 30 V, IE = 0 100 nA IEBO Emitter-Cutoff Current V EB = 10 V, IC = 0 100 nA ON CHARACTERISTICS* hFE DC Current Gain I C = 10 mA, VCE = 5.0 V IC = 100 mA, VCE = 5.0 V 10K 20K VCE(sat) Collector-Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA 1.5 V VBE(on) Base-Emitter On Voltage I C = 100 mA, VCE = 5.0 V 2.0 V SMALL SIGNAL CHARACTERISTICS *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 10 V, f = 100 MHz
200 MHz
Typical Pulsed Current Gain vs Collector Current 0.001 0.01 0.1 1 100 150 200 250 I - COLLECTOR CURRENT (A) h - TYPICAL PULSED CURRENT GAIN (K)C FE 25 °C 125 °C - 40 °C V = 5VCE Collector-Emitter Saturation Voltage vs Collector Current 1 10 100 1000 0.4 0.8 1.2 1.6 I - COLLECTOR CURRENT (mA) V - COLLECTOR EMITTER VOLTAGE (V) CCESAT 25°C - 40 ºC 125 ºC β = 1000 Base-Emitter Saturation Voltage vs Collector Current 1 10 100 1000 0.4 0.8 1.2 1.6 I - COLLECTOR CURRENT (mA) V - BASE EMITTER VOLTAGE (V) C BESAT 25 °C - 40 ºC 125 ºC β = 1000 Base Emitter ON Voltage vs Collector Current 1 10 100 1000 0.4 0.8 1.2 1.6 I - COLLECTOR CURRENT (mA) V - BASE EMITTER ON VOLTAGE (V) C BEON V = 5VCE - 40 ºC 25 °C 125 ºC NPN Multi-Chip Darlington Transistor (continued)
Typical Characteristics (continued) NPN Multi-Chip Darlington Transistor (continued) Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 0.1 1 10 100 1000 59.5 60.5 61.5 62.5 RESISTANCE (k ) BV - BREAKDOWN VOLTAGE (V)Ω CER Collector-Cutoff Current vs Ambient Temperature 25 50 75 100 125 0.01 0.1 100 T - AMBIENT TEMPERATURE ( C) I - COLLECTOR CURRENT (nA) A CBO º V = 30VCB Input and Output Capacitance vs Reverse Voltage 0.1 1 10 100 V - COLLECTOR VOLTAGE(V) CAPACITANCE (pF) ce Cib Cob f = 1.0 MHz Gain Bandwidth Product vs Collector Current 11 0 2 0 5 0 1 0 0 1 5 0 I - COLLECTOR CURRENT (mA) f - GAIN BANDWIDTH PRODUCT (MHz) C T V = 5Vce Power Dissipation vs Ambient Temperature 0 2 55 07 5 1 0 0 1 2 5 1 5 0 0.25 0.5 0.75 TEMPERATURE ( C) P - POWER DISSIPATION (W)D o SOT-6