FMBA0656 FAIRCHILD | Alldatasheet
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NPN & PNP Complementary Dual Transistor SuperSOT- 6 Surface Mount Package Absolute Maximum Ratings T A = 25°C unless otherwise noted °C/W180Thermal Resistance, Junction to AmbientR θJA °C150Junction TemperatureT J °C-55 to +150Storage Temperature RangeT STG W0.7Power Dissipation @Ta = 25°C*P D mA500Collector Current ( continuous )IC V4Emitter-Base VoltageV EBO V80Collector-Base VoltageV CBO V80Collector-Emitter VoltageV CEO UnitsValueParameterSymbol * Pd total, for both transistors. For eac h transistor, Pd = 350mW. Electrical Characteristics T A = 25°C unless otherwise noted V4Ie = 100 uAEmitter to Base VoltageBV EBO V80Ic = 100 u ACollector to Base VoltageBV C B O V80Ic = 1.0 mACollector to Emitter VoltageBV CEO UnitsMaxMinTest ConditionsParameterSymbol 1997 Fairchild Semiconductor Corporation Page 1 of 2 fmba0656.lwp Pr 33& 73 ( Y 3) Package: SuperSOT-6 Device Marking: .003 Note: The " . " (dot) signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. Th is device was designed for gener al purpose amplifier applications at collector currents to 30 0mA. Sourced from Process 33 (NPN) and Process 73 (PNP). Discrete Power & Signal Technologies FMBA0656
V1.2Ic = 100 mA, V ce = 1 VBase-Emitter On VoltageV BE( on ) V0.25Ic = 1 00 mA, Ib = 10 mACollector-Emitter Saturation VoltageV CE(sat) -100 100 Vce = 1 V, Ic = 10 mA Vce = 1 V, Ic = 100 mA DC Current Gain h FE nA100Vce = 60 V Collector Cutoff CurrentIC E O nA100Vcb = 80 V Collector Cutoff CurrentICBO UnitsMaxMinTest ConditionsParameterSymbol NPN & PNP Complementary Dual Transistor (continued) Electrical Characteristics T A = 25°C unless otherwise noted Small - Signal Characteristics -50Vce = 1 V, Ic = 100 mA, f = 100 M HzCurrent Gain - Bandwidth ProductfT 1997 Fairchild Semiconductor Corporation Page 2 of 2 fmba0656.lwp Pr 33& 73 ( Y 3) FMBA0656