FMBA06 FAIRCHILD | Alldatasheet

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NPN Multi-Chip General Purpose Amplifier Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 80 V VCBO Collector-Base Voltage 80 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current - Continuous 500 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Discrete POWER & Signal Technologies  1998 Fairchild Semiconductor Corporation Thermal Characteristics TA = 25°C unless otherwise noted FMBA06 Symbol Characteristic Max Units FMBA06 PD Total Device Dissipation Derate above 25°C 700 5.6 mW mW/ °C R θJA Thermal Resistance, Junction to Ambient 180 °C/W SuperSOT  -6 Mark: .1G pin #1

Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Typ Max Units V(BR)CEO Collector-Emitter Sustaining Voltage* IC = 1.0 mA, IB = 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 µA, IC = 0 4.0 V ICEO Collector-Cutoff Current V CE = 60 V, IB = 0 0.1 µA ICBO Collector-Cutoff Current V CB = 80 V, IE = 0 0.1 µA ON CHARACTERISTICS hFE DC Current Gain I C = 10 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V 100 100 VCE(sat) Collector-Emitter Saturation Voltage IC = 100 mA, IB = 10 mA 0.25 V VBE(on) Base-Emitter On Voltage I C = 100 mA, VCE = 1.0 V 1.2 V SMALL SIGNAL CHARACTERISTICS *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Typical Characteristics fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 2.0 V, f = 100 MHz

150 MHz

Collector-Emitter Saturation Voltage vs Collector Current 0.1 1 10 100 1000 0.1 0.2 0.3 0.4 0.5 I - COLLECTOR CURRENT (mA) V - COLLECTOR EMITTER VOLTAGE (V)CCESA T β = 10 - 40 ºC 25 °C 125 °C NPN Multi-Chip General Purpose Amplifier (continued) Typical Pulsed Current Gain vs Collector Current 0.001 0.01 0.1 100 150 200 I - COLLECTOR CURRENT (A) h - TYPICAL PULSED CURRENT GAIN FE - 40 ºC 25 °C C V = 1VCE 125 °C

Typical Characteristics (continued) Collector-Cutoff Current vs. Ambient Temperature P3 3 25 50 75 100 125 0.001 0.01 0.1 T - AMBIENT TEMPERATURE ( C) I - COLLECTOR CURRENT (nA) A CBO º V = 80 VCB Base-Emitter Saturation Voltage vs Collector Current 0.1 1 10 100 1000 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - BASE EMITTER VOLTAGE (V) C BESA T β = 10 - 40 ºC 25 °C 125 °C Base Emitter ON Voltage vs Collector Current 1 10 100 1000 0.2 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - BASE EMITTER ON VOLTAGE (V) C BEON V = 5VCE - 40 ºC 25 °C 125 °C Collector Saturation Region 4000 10000 20000 30000 50000 0.5 1.5 I - BASE CURRENT (uA) V - COLLECTOR-EMITTER VOLTAGE (V) B 10 mA 100 mA1 mA T = 25°C I = CE C A Ω CER Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 0.1 1 10 100 1000 111 112 113 114 115 116 117 RESISTANCE (k ) BV - BREAKDOWN VOLTAGE (V) Input and Output Capacitance vs Reverse Voltage 0.1 1 10 100 0.1 100 V - COLLECTOR VOLTAGE(V) CAPACITANCE (pF) C f = 1.0 MHz CE C ob ib NPN Multi-Chip General Purpose Amplifier (continued)

Typical Characteristics (continued) Gain Bandwidth Product vs Collector Current 11 0 2 0 5 0 1 0 0 100 150 200 250 300 350 400 I - COLLECTOR CURRENT (mA) f - GAIN BANDWIDTH PRODUCT (MHz) C T V = 5Vce Power Dissipation vs Ambient Temperature 0 25 50 75 100 125 150 0.25 0.5 0.75 TEMPERATURE ( C) P - POWER DISSIPATION (W)D o SOT-6 NPN Multi-Chip General Purpose Amplifier (continued)