FFB2907A FAIRCHILD | Alldatasheet

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FFB2907A / FMBT2907A / MMPQ2907A Symbol Parameter Value Units VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 600 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Discrete POWER & Signal Technologies  1998 Fairchild Semiconductor Corporation PNP Multi-Chip General Purpose Amplifier Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units FFB2907A FMB2907A MMPQ2907A PD Total Device Dissipation Derate above 25°C 300 2.4 700 5.6 1,000 8.0 mW mW/ °C R θJA Thermal Resistance, Junction to Ambient Effective 4 Die Each Die 415 180 125 240 °C/W °C/W °C/W FFB2907A SC70-6 Mark: .2F pin #1 FMB2907A SuperSOT  -6 Mark: .2F pin #1 MMPQ2907A SOIC-16 C1 C1C2 C2C3 C3 C4C4E1 E3 B3 E4 B4 This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63.

FFB2907A / FMBT2907A / MMPQ2907A Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS ON CHARACTERISTICS SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 50 mA, VCE = 20 V, f = 100 MHz

250 MHz

C obo Output Capacitance V CB = 10 V, IE = 0, f = 100 kHz 6.0 pF C ibo Input Capacitance V EB = 2.0 V, IC = 0, f = 100 kHz 12 pF SWITCHING CHARACTERISTICS ton Turn-on Time V CC = 30 V, IC = 150 mA, 30 ns td Delay Time I B1 = 15 mA 8.0 ns tr Rise Time 20 ns toff Turn-off Time V CC = 6.0 V, IC = 150 mA 80 ns ts Storage Time I B1 = IB2 = 15 mA 60 ns tf Fall Time 20 ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Symbol Parameter Test Conditions Min Typ Max Units V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 60 V V(BR)CBO Collector-Base Breakdown VoltageIC = 10 µA, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V IB Base Cutoff Current V CB = 30 V, VEB = 0.5 V 50 nA ICEX Collector Cutoff Current V CE = 30 V, VBE = 0.5 V 50 nA ICBO Collector Cutoff Current V CB = 50 V, IE = 0 VCB = 50 V, IE = 0, TA = 125°C 0.02 µA µA hFE DC Current Gain I C = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V* IC = 500 mA, VCE = 10 V* 100 100 100 300 VCE(sat) Collector-Emitter Saturation Voltage* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 0.4 1.6 V V VBE(sat) Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA* IC = 500 mA, IB = 50 mA 1.3 2.6 V V PNP Multi-Chip General Purpose Amplifier (continued)

FFB2907A / FMBT2907A / MMPQ2907A Typical Characteristics Typical Pulsed Current Gain vs Collector Current 0.1 0.3 1 3 10 30 100 300 100 200 300 400 500 I - COLLECTOR CURRENT (mA) h - TYPICAL PULSED CURRENT GAIN C FE 125 °C 25 °C - 40 °C V = 5VCE Collector-Emitter Saturation Voltage vs Collector Current 11 0 1 0 0 5 0 0 0.1 0.2 0.3 0.4 0.5 I - COLLECTOR CURRENT (mA) V - COLLECTOR EMITTER VOLTAGE (V) CCESA T β = 10 25 °C - 40 ºC 125 ºC Base-Emitter Saturation Voltage vs Collector Current 1 10 100 500 0.2 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - BASE EMITTER VOLTAGE (V) C BESA T 25 °C - 40 ºC 125 ºC β = 10 Base Emitter ON Voltage vs Collector Current 0.1 1 10 25 0.2 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - BASE EMITTER ON VOLTAGE (V)C BEON V = 5VCE 25 °C - 40 ºC 125 ºC Collector-Cutoff Current vs. Ambient Temperature 25 50 75 100 125 0.01 0.1 100 T - AMBIENT TEMPERATURE ( C) I - COLLECTOR CURRENT (nA) A CBO º V = 35VCB Input and Output Capacitance vs Reverse Bias Voltage 0.1 1 10 50 REVERSE BIAS VOLTAGE (V) CAPACITANCE (pF) C ob C ib PNP Multi-Chip General Purpose Amplifier (continued)

FFB2907A / FMBT2907A / MMPQ2907A Typical Characteristics (continued) Switching Times vs Collector Current 10 100 1000 100 150 200 250 I - COLLECTOR CURRENT (mA) TIME (nS) I = I = tr t s C Ic V = 15 Vcc tf td Turn On and Turn Off Times vs Collector Current 10 100 1000 100 200 300 400 500 I - COLLECTOR CURRENT (mA) TIME (nS) I = I = t on t off C Ic V = 15 Vcc Rise Time vs Collector and Turn On Base Currents 10 100 500 I - COLLECTOR CURRENT (mA) I - TURN 0N BASE CURRENT (mA) 30 ns C t = 15 Vr 60 ns PNP Multi-Chip General Purpose Amplifier (continued) Power Dissipation vs Ambient Temperature 0 2 55 07 5 1 0 0 1 2 5 1 5 0 0.25 0.5 0.75 TEMPERATURE ( C) P - POWER DISSIPATION (W)D o SOT-6

FFB2907A / FMBT2907A / MMPQ2907A Test Circuits FIGURE 1: Saturated Turn-On Switching Time Test Circuit FIGURE 2: Saturated Turn-Off Switching Time Test Circuit

1.0 KΩΩΩΩΩ

  • 6.0 V15 V
  • 30 V - 16 V 50 ΩΩΩΩΩ 200 ΩΩΩΩΩ

1 KΩΩΩΩΩ 37 ΩΩΩΩΩ

50 ΩΩΩΩΩ 30 V PNP Multi-Chip General Purpose Amplifier (continued)