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FFB2227A / FMB2227A — NPN & PNP General-Purpose Amplifier Publication Order Number: FFB2227A/D © 1998 Semiconductor Components Industries, LLC. November-2017, Rev. 2 1 FFB2227A / FMB2227A NPN & PNP General-Purpose Amplifier

Ordering Information

Part Number Top Mark Package Packing Method FFB2227A AA SC70 6L Tape and Reel FMB2227A 001 SSOT 6L Tape and Reel Figure 1. Block Diagram

Description

This complementary device is a medium-power amplifier and switch, requiring collector currents up to 500 mA. Sourced from Process 19 and 63. See FFB2222A (NPN) and FFB2907A (PNP) for characteristics.

FFB2227A / FMB2227A — NPN & PNP General-Purpose Amplifier www.onsemi.com Absolute Maximum Ratings(1) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low- duty cycle operations. 3. All voltages (V) and currents (A) are negative polarity for PNP transistors. 4. These Ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics(2) Values are at TA = 25°C unless otherwise noted. Note: Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current - Continuous 500 mA TJ, TSTG Operating and Storage Junction Temperature Range - 55 to +150 °C Symbol Parameter Maximum Units FFB2227A FMB2227A PD Total Device Dissipation 300 700 mV Derate Above 25°C 2.4 5.6 mV/°C RθJA Thermal Resistance, Junction to Ambient 415 180 °C/W

FFB2227A / FMB2227A — NPN & PNP General-Purpose Amplifier Electrical Characteristics(3) Values are at TA = 25°C unless otherwise noted. Notes: 3. All voltages (V) and currents (A) are negative polarity for PNP transistors. 4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. Symbol Parameter Test Conditions Min. Typ. Max. Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage(4) IC = 10 mA, IB = 0 30 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 10 μA, IC = 0 5 V ICBO Collector Cut-Off Current V CB = 50 V, IE = 0 30 nA IEBO Emitter Cut-Off Current VEB = 3.0 V, IC = 0 30 nA ON CHARACTERISTICS hFE DC Current Gain IC = 1.0 mA, VCE = 10 V 50 IC = 10 mA, VCE = 10 V 75 IC = 150 mA, VCE = 10 V(4) 100 IC = 300 mA, VCE = 10 V(4) 30 VCE(sat) Collector-Emitter Saturation Voltage (4) IC = 150 mA, IB = 15 mA 0.4 V IC = 300 mA, IB = 30 mA 1.4 V VBE(sat) Base-Emitter Saturation Voltage(4) IC = 150 mA, IB = 15 mA 1.3 V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 50 mA, VCE = 20 V, f = 100 MHz 250 MHz Cobo Output Capacitance VCB = 10 V, IE = 0, f = 100 kHz 4.0 pF Cibo Input Capacitance VEB = 2.0 V, IC = 0, f = 100 kHz 12 pF NF Noise Figure IC = 100 μA, VCE = 10 V, RS = 1.0 kΩ, f = 1.0 kHz 2.0 dB SWITCHING CHARACTERISTICS ton Turn-on Time VCC = 30 V, IC = 150 mA, IB1 = 15 mA 30 ns td Delay Time 8.0 ns tr Rise Time 20 ns toff Turn-off Time VCC = 6.0 V, IC = 150 mA, IB1 = IB2 = 15 mA 80 ns ts Storage Time 60 ns tf Fall Time 20 ns www.onsemi.com

Figure 2. 6-LEAD, SC70, EIAJ SC-88, 1.25 MM WIDE (ACTIVE) conditions, specifically the warranty therein, which covers ON Semiconductor products.

0.50 MIN

0.10 A B

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Figure 3. 6-LEAD, SUPER SOT-6, JEDEC MO-193, 1.6 MM WIDE (ACTIVE) conditions, specifically the warranty therein, which covers ON Semiconductor products.

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