FMB200 FAIRCHILD | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

PNP Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 500 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Discrete POWER & Signal Technologies  1998 Fairchild Semiconductor Corporation FMB200 SuperSOT  -6 Mark: .N2 pin #1 Symbol Characteristic Max Units FMB200 PD Total Device Dissipation Derate above 25°C 700 5.6 mW mW/ °C R θJA Thermal Resistance, Junction to Ambient 180 °C/W

Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS ON CHARACTERISTICS SMALL SIGNAL CHARACTERISTICS *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% BV CBO Collector-Base Breakdown VoltageIC = 10 µA, IB = 0 60 V BV CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IE = 0 45 V BV EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 6.0 V ICBO Collector Cutoff Current V CB = 50 V, IE = 0 50 nA ICES Collector Cutoff Current V CE = 40 V, IE = 10 50 nA IEBO Emitter Cutoff Current V EB = 4.0 V, IC = 0 50 nA fT Current Gain - Bandwidth Product VCE = 20 V, IC = 20 mA 300 MHz C obo Output Capacitance V CB = 10 V, f = 1.0 MHz 4.5 pF NF Noise Figure IC = 100 µA, VCE = 5.0 V, R G = 2.0 kΩ , f = 1.0 kHz 2.5 dB hFE DC Current Gain IC = 100 µA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 150 mA, VCE = 5.0 V* 100 100 450 350 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 200 mA, IB = 20 mA* 0.2 0.4 V V VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 200 mA, IB = 20 mA* 0.85 1.0 V V PNP Multi-Chip General Purpose Amplifier (continued) Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current P6 8 0.1 1 10 100 300 0.05 0.1 0.15 0.2 0.25 0.3 I - COLLECTOR CURRENT (mA) V - COLLECTOR EMITTER VOLTAGE (V)CCESAT 25 °C - 40 ºC 125 ºC β = 10 Typical Pulsed Current Gain vs Collector Current 0.01 0.1 1 10 100 100 200 300 400 500 I - COLLECTOR CURRENT (mA) h - TYPICAL PULSED CURRENT GAIN C FE 125 °C 25 °C - 40 °C V = 5VCE Symbol Parameter Test Conditions Min Typ Max Units

Typical Characteristics (continued) Base-Emitter Saturation Voltage vs Collector Current 0.1 1 10 100 300 0.2 0.4 0.6 0.8 1.2 I - COLLECTOR CURRENT (mA) V - BASE EMITTER VOLTAGE (V) C BESA T β = 10 25 °C - 40 ºC 125 ºC Base Emitter ON Voltage vs Collector Current 0.1 1 10 100 200 0.2 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - BASE EMITTER ON VOLTAGE (V)C BEON V = 5VCE 25 °C - 40 ºC 125 ºC Collector-Cutoff Current vs. Ambient Temperature 25 50 75 100 125 0.01 0.1 100 T - AMBIENT TEMPERATURE ( C) I - COLLECTOR CURRENT (nA) A CBO º V = 50VCB Ω CER Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 0.1 1 10 100 1000 RESISTANCE (k ) BV - BREAKDOWN VOLTAGE (V) Collector Saturation Region 100 300 700 2000 4000 I - BASE CURRENT (uA) V - COLLECTOR-EMITTER VOLTAGE (V)CE B 50 mA 300 mA100 uA Ta = 25°C Ic = Input and Output Capacitance vs Reverse Voltage 0.1 1 10 100 100 V - COLLECTOR VOLTAGE(V) CAPACITANCE (pF) Cib Cob f = 1.0 MHz ce PNP Multi-Chip General Purpose Amplifier (continued)

Typical Characteristics (continued) Gain Bandwidth Product vs Collector Current P6 8 11 0 2 0 5 0 1 0 0 1 5 0 I - COLLECTOR CURRENT (mA) f - GAIN BANDWIDTH PRODUCT (MHz) C T V = 5Vce Switching Times vs Collector Current 10 20 30 50 100 200 300 120 150 180 210 240 270 300 I - COLLECTOR CURRENT (mA) TIME (nS) IB1 = IB2 = Ic / 10 V = 10 V C cc ts td tf tr PNP Multi-Chip General Purpose Amplifier (continued) Power Dissipation vs Ambient Temperature 0 2 55 07 5 1 0 0 1 2 5 1 5 0 0.25 0.5 0.75 TEMPERATURE ( C) P - POWER DISSIPATION (W)D o SOT-6