FMB100 FAIRCHILD | Alldatasheet

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NPN Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. Absolute Maximum Ratings* TA =25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Discrete POWER & Signal Technologies Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCBO Collector-Base Voltage 75 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 500 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics TA= 25°C unless otherwise noted Symbol Characteristic Max Units FMB100 PD Total Device Dissipation Derate above 25°C 700 5.6 mW mW/ °C R θJA Thermal Resistance, Junction to Ambient 180 °C/W  1998 Fairchild Semiconductor Corporation SuperSOT  -6 Mark: .NA pin #1

NPN Multi-Chip General Purpose Amplifier (continued) Electrical Characteristics TA= 25°C unless otherwise noted OFF CHARACTERISTICS ON CHARACTERISTICS SMALL SIGNAL CHARACTERISTICS *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% BV CBO Collector-Base Breakdown VoltageIC = 10 µA, IB = 0 75 V BV CEO Collector-Emitter Breakdown Voltage* IC = 1 mA, IE = 0 45 V BV EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 6.0 V ICBO Collector Cutoff Current V CB = 60 V 50 nA ICES Collector Cutoff Current V CE = 40 V 50 nA IEBO Emitter Cutoff Current V EB = 4 V 50 nA hFE DC Current Gain IC = 100 µA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V* IC = 150 mA, VCE = 5.0 V* 100 100 100 450 350 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 200 mA, IB = 20 mA* 0.2 0.4 V V VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 200 mA, IB = 20 mA* 0.85 1.0 V V Typical Characteristics Typical Pulsed Current Gain vs Collector Current 10 20 30 50 100 200 300 500 100 200 300 400 I - COLLECTOR CURRENT (mA) h - TYPICAL PULSED CURRENT GAIN C FE 125 °C 25 °C - 40 °C Vce = 5V Collector-Emitter Saturation Voltage vs Collector Current 1 10 100 400 0.1 0.2 0.3 0.4 I - COLLECTOR CURRENT (mA) V - COLLECTOR-EMITTER VOLTAGE (V)C CESAT 25 °C - 40 °C 125 °C β = 10 fT Current Gain - Bandwidth Product VCE = 20 V, IC = 20 mA 300 MHz C obo Output Capacitance V CB = 5.0 V, f = 1.0 MHz 3.5 pF NF Noise Figure IC = 100 µA, VCE = 5.0 V, R G = 2.0 kΩ , f = 1.0 kHz 2.5 dB Symbol Parameter Test Conditions Min Typ Max Units

Typical Characteristics (continued) NPN Multi-Chip General Purpose Amplifier (continued) Base-Emitter Saturation Voltage vs Collector Current 0.1 1 10 100 300 0.2 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - COLLECTOR-EMITTER VOLTAGE (V) β = 10 C BESAT 25 °C - 40 °C 125 °C Base-Emitter ON Voltage vs Collector Current 1 10 100 500 0.2 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - BASE-EMITTER ON VOLTAGE (V) C BEON V = 5VCE 25 °C - 40 °C 125 °C Collector-Cutoff Current vs Ambient Temperature 25 50 75 100 125 150 0.1 T - AMBIENT TEMPERATURE ( C) I - COLLECTOR CURRENT (nA) A CBO V = 60V º CB Input and Output Capacitance vs Reverse Voltage 0.1 1 10 100 0.1 100 V - COLLECTOR VOLTAGE(V) CAPACITANCE (pF) Cib Cob f = 1.0 MHz ce Switching Times vs Collector Current 10 20 30 50 100 200 300 120 150 180 210 240 270 300 I - COLLECTOR CURRENT (mA) TIME (nS) IB1 = IB2 = Ic / 10 V = 10 V C cc ts td tf tr Power Dissipation vs Ambient Temperature 0 2 55 07 5 1 0 0 1 2 5 1 5 0 0.25 0.5 0.75 TEMPERATURE ( C) P - POWER DISSIPATION (W)D o SOT-6