FM75N08

FM75N08 FCI | Alldatasheet

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Symbol Parameter Value Units VDSS Drain to Source Voltage 80 V ID Continuous Drain Current(@TC = 25°C) 75 A Continuous Drain Current(@TC = 100°C) 52.5 A IDM Drain Current Pulsed (Note 1) 300 A VGS Gate to Source Voltage ±20 V EAS Single Pulsed Avalanche Energy (Note 2) 1310 mJ EAR Repetitive Avalanche Energy (Note 1) 17.3 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns PD Total Power Dissipation(@TC = 25 °C) 173 W Derating Factor above 25 °C 1.15 W/°C TSTG, TJ Operating Junction Temperature & Storage Temperature - 55 ~ 175 °C TL Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. 300 °C Thermal Characteristics Symbol Parameter Value Units Min. Typ. Max. RθJC Thermal Resistance, Junction-to-Case - - 0.87 °C/W RθCS Thermal Resistance, Case to Sink - 0.5 - °C/W RθJA Thermal Resistance, Junction-to-Ambient - - 62.5 °C/W 75A 80V N Channel Mosfet Transistor █ A P P L I C A T I O N S L Low Voltage high-Speed Switching. Tj ——Operating Junction Te mperature ………………150℃ PD —— Allowable Power Dissipation（Tc=25℃）………173W Static Drain Source on-state Resistance…… 0.015Ohm @10VRDson—— Qg ——

Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 80 - - V Δ BVDSS/ Δ TJ Breakdown Voltage Temperature coefficient ID = 250uA, referenced to 25 °C -0 . 0 8 -V / ° C IDSS Drain-Source Leakage Current VDS = 80V, VGS = 0V -- 1 0 u A VDS = 64V, TC = 125 °C -- 1 0 0 u A IGSS Gate-Source Leakage, Forward VGS = 20V, VDS = 0V -- 1 0 0 n A Gate-source Leakage, Reverse VGS = -20V, VDS = 0V - - -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 2.0 - 4.0 V RDS(ON) Static Drain-Source On-state Resis- tance VGS =10 V, ID = 37.5A - 0.012 0.015 Ω Dynamic Characteristics Ciss Input Capacitance VGS =0 V, VDS =25V, f = 1MHz - 2600 3380 pFCoss Output Capacitance - 940 1220 Crss Reverse Transfer Capacitance - 210 275 Dynamic Characteristics td(on) Turn-on Delay Time VDD =40V, ID =75A, RG =25Ω (Note 4, 5) - 30 70 ns tr Rise Time - 225 460 td(off) Turn-off Delay Time - 165 340 tf Fall Time - 155 320 Qg Total Gate Charge VDS =64V, VGS =10V, ID =75A (Note 4, 5) - 80 105 nCQgs Gate-Source Charge - 15 - Qgd Gate-Drain Charge(Miller Charge) - 32 - Source-Drain Diode Ratings and Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit. IS Continuous Source Current Integral Reverse p-n Junction Diode in the MOSFET -- 7 5 AISM Pulsed Source Current - - 300 VSD Diode Forward Voltage I S =75A, VGS =0V - - 1.5 V trr Reverse Recovery Time IS=75A, VGS=0V, dIF/dt=100A/us -9 0 -n s Qrr Reverse Recovery Charge - 250 - uC ※NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. L = 0.32mH, IAS =75A, VDD = 25V, RG = 25Ω , Starting TJ = 25°C 3. ISD ≤ 75A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. 75A 80V N Channel Mosfet Transistor

50KΩ 200nF12V Same Type as DUT Charge VGS 10V Qg Qgs Qgd 3mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT VGS VDS 10% 90% td(on) tr ton toff td(off) tf VDD 10V VDS RL DUT RG VGS VGS VDS 10% 90% td(on) tr ton toff td(off) tf VDD 10V VDS RL DUT RG VGS EAS =L IAS 2----2 BVDSS-VDD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time 10V DUT RG L ID t p EAS =L IAS 2----2 AS =L IAS 2----2 1----2 BV DSS-VDD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time 10V DUT RG LL IDID t p Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 75A 80V N Channel Mosfet Transistor

Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT V DS Dr i v e r R G Sam e Ty pe as DU T V GS • dv/ dt cont r ol l ed by R G

• I SD cont r ol l ed by pul se per i od V DD L I SD 10V V GS ( D riv e r ) I SD ( D U T ) V DS ( D U T ) V DD Body Di ode For war d Vol t a g e Dr o p V SD I FM , Body Di ode For w ar d Cur r ent Body Di ode Rever se Cur r ent I RM Body Di ode Recover y dv/ dt di / dt D = G a te P u ls e W id th DUT V DS Dr i v e r R G Sam e Ty pe as DU T V GS • dv/ dt cont r ol l ed by R G
• I SD cont r ol l ed by pul se per i od V DD LL I SD 10V V GS ( D riv e r ) I SD ( D U T ) V DS ( D U T ) V DD Body Di ode For war d Vol t a g e Dr o p V SD I FM , Body Di ode For w ar d Cur r ent Body Di ode Rever se Cur r ent I RM Body Di ode Recover y dv/ dt di / dt D = G a te P u ls e W id th 75A 80V N Channel Mosfet Transistor

1.52 ±0.10 0.80 ±0.10 2.40 ±0.20 10.00 ±0.20 1.27 ±0.10 ø3.60 ±0.10 (8.70) 10.08 ±0.30 18.95MAX. (1.70) (3.70)(3.00) (1.46) (1.00) (45 1.30 ±0.10 1.30 +0.10 –0.05 0.50 +0.10 –0.05 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] TO-220 75A 80V N Channel Mosfet Transistor