FM740 FCI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. /g139/g3Robust High Voltage Termination /g139/g3Avalanche Energy Specified /g139/g3Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode /g139/g3Diode is Characterized for Use in Bridge Circuits /g139/g3I DSS and VDS(on) Specified at Elevated Temperature PIN CONFIGURATION SYMBOL TO-220 Top View 1 23 GATE DRAIN SOURCE D S G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Drain to Current /g1025 Continuous /g1025 Pulsed ID IDM A Gate-to-Source Voltage /g1025 Continue /g1025 Non-repetitive VGS VGSM ±20 ±40 V V Total Power Dissipation Derate above 25 /g1082 PD 125 1.0 W W//g1082 Operating and Storage Temperature Range T J, TSTG -55 to 150 /g1082 Single Pulse Drain-to-Source Avalanche Energy /g1025 T J = 25/g1082 (VDD = 100V, VGS = 10V, IL = 10A, L = 6mH, RG = 25/g525) EAS 300 mJ Thermal Resistance /g1025 Junction to Case /g1025 Junction to Ambient /g537JC /g537JA 1.7 62.5 /g1082/W Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds T L 260 /g1082 FM740 10A 400V Power MOSFET
ORDERING INFORMATION
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25/g1082. CFM740 Characteristic Symbol Min Typ Max Units Drain-Source Breakdown Voltage ( V GS = 0 V, ID = 250 /g1268A) V(BR)DSS 400 V Drain-Source Leakage Current (VDS = 400 V, VGS = 0 V) (VDS = 400 V, VGS = 0 V, TJ = 125/g1082) IDSS 0.25 1.0 mA Gate-Source Leakage Current-Forward ( V gsf = 20 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse ( V gsr = 20 V, VDS = 0 V) Gate Threshold Voltage ( V DS = VGS, ID = 250 /g1268A) VGS(th) 2.0 4.0 V Drain-Source On-Voltage (VGS = 10 V) ( I D = 5.0 A) VDS(on) 6.0 V Input Capacitance C iss 1570 pF Output Capacitance C oss 230 pF Reverse Transfer Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Crss 55 pF Turn-On Delay Time t d(on) 25 ns Rise Time tr 37 ns Turn-Off Delay Time t d(off) 75 ns Fall Time (VDD = 200 V, ID = 10.0 A, VGS = 10 V, RG = 10/g525) * tf 31 ns Total Gate Charge Q g 46 63 nC Gate-Source Charge Q gs 10 nC Gate-Drain Charge (VDS = 320 V, ID = 10.0 A, VGS = 10 V)* Qgd 23 nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) L D 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) L S 7.5 nH SOURCE-DRAIN DIODE CHARACTERISTICS Forward Turn-On Time t on ** ns Reverse Recovery Time (IS = 10.0 A, VGS = 0 V, dIS/dt = 100A/µs) trr 250 ns * Pulse Test: Pulse Width /g1033300µs, Duty Cycle /g10332% ** Negligible, Dominated by circuit inductance FM740 10A 400V Power MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS FM740 10A 400V Power MOSFET