FM50N06 FCI | Alldatasheet
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Technical content
█ A P P L I C A T I O N S L Low V oltage high-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS （Ta=25℃） █ ELECTRICAL CHARACTERISTICS （T a=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVDSS Drain-Source Breakdown Voltage 60 V I D=250μA ,VGS=0V IDSS Zero Gate Voltage Drain Current 1 μ A VDS = 60V，VGS=0 IGSS Gate –Source Leakage Current ± 100 nA VGS=±20V , VDS =0V VGS(th) Gate Threshold Voltage 2.0 4.0 V V DS = VGS , ID =250μA RDS(on) StaticDrain-Source On-Resistance 0.018 0.023 Ω VGS=10V , ID =25A Ciss Input Capacitance 880 1140 pF Coss Output Capacitance 430 560 pF VDS =25V , VGS=0,f=1MHz Crss Reverse Transfer Capacitance 110 140 pF td(on) Turn - On Delay Time 60 130 nS tr Rise Time 185 380 nS td(off) Turn - Off Delay Time 75 160 nS tf Fall Time 60 130 nS V DD =30V, ID =25A RG= 50 Ω* Qg Total Gate Charge 39 45 nC VDS =48V Qgs Gate–Source Charge 9.5 nC VGS=10V Qgd Gate–Drain Charge 13 nC ID=50A* Is Continuous Source Current 50 A VSD Diode Forward Voltage 1.5 V IS =50A , VGS=0 Rth （j-c） Thermal Resistance， Junction-to-Case 1.15 ℃/W *Pulse Test：Pulse Width≤300μs，Duty Cycle≤2% 50A 60V N Channel Mosfet