FM3080SC CHIPSOURCETEK | Alldatasheet

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 30V,65A  RDS(ON)=5.4mΩ(Typ.)@VGS=10V  RDS(ON)=7.8mΩ(Typ.)@VGS=4.5V  AdvancedTrenchTechnology  ProvideExcellent RDS(ON) andLowGate Charge Application  LoadSwitch  PWMApplication Symbol Parameter Value Units VDSS Drain-SourceVoltage 30 V VGSS Gate-Source Voltage ±20 V ID Continuous DrainCurrent TC=25℃ 65 A TC=100℃ 41 A IDM Pulsed DrainCurrentnote1 197 A EAS SinglePulsedAvalancheEnergynote2 144 mJ PD Power Dissipation TC=25℃ 32 W RθJC ThermalResistance, Junction toCase 3.9 ℃/W TJ,TSTG Operatingand Storage TemperatureRange -55 to+150 ℃ 3080SC Package TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 WEB:Http://www.ChipSourceTek.com E-mail: Sales@ChipSourceTek.com Tony.Wang@ChipSourceTek.com 矽源特科技 ChipSourceTek

第 2页 共 7页 Version1.0 Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-SourceBreakdownVoltage VGS=0V,ID=250μA 30 - - V IDSS ZeroGateVoltageDrainCurrent VDS=30V,VGS= 0V, - - 1.0 μA IGSS GatetoBody LeakageCurrent VDS=0V,VGS = ±20V - - ±100 nA On Characteristics VGS(th) GateThresholdVoltage VDS=VGS,ID=250μA 1 1.6 2 V RDS(on) StaticDrain-Sourceon-Resistance note3 gFS ForwardTransconductance VDS=5V,ID =20A - 64 - S Dynamic Characteristics Ciss InputCapacitance VDS=15V,VGS =0V, f=1.0MHz - 1282 - pF Coss OutputCapacitance - 192 - pF Crss ReverseTransferCapacitance - 177 - pF Rg Gateresistance - - 2.1 - Ω Switching Characteristics Qg TotalGate Charge VDS=15V,ID =20A, VGS =10V - 27.1 - nC Qgs Gate-SourceCharge - 3.8 - nC Qgd Gate-Drain(“Miller”)Charge - 6.8 - nC td(on) Turn-on DelayTime VDS=15V,VGS =10V RL=0.75Ω,RGEN=3Ω, - 10.5 - ns tr Turn-on RiseTime - 60 - ns td(off) Turn-offDelay Time - 24.5 - ns tf Turn-offFall Time - 13.5 - ns Drain-Source Diode Characteristics and MaximumRatings IS MaximumContinuous DraintoSource DiodeForward Current - - 65 A ISM MaximumPulsed Drainto Source Diode ForwardCurrent - - 197 A VSD Drainto SourceDiodeForward Voltage VGS=0V, IS=30A - - 1.2 V Notes:1.RepetitiveRating:PulseWidthLimitedbyMaximumJunctionTemperature 2.EAScondition:TJ=25℃,VDD=30V,VG=10V,RG=25Ω，L=0.5mH 3.PulseTest:PulseWidth≤300μs,DutyCycle≤0.5% TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 WEB:Http://www.ChipSourceTek.com E-mail: Sales@ChipSourceTek.com Tony.Wang@ChipSourceTek.com FM3080SC N-Channel Trench Power MOSFET 矽源特科技 ChipSourceTek

第 4页 共 7页 Version1.0 FM3080SC Typical Performance Characteristics Figure7: Capacitance Characteristics C(pF) Figure 8: CurrentDe-rating Figure9: Maximum Forward Biased Safe Operating Area TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 WEB:Http://www.ChipSourceTek.com E-mail: Sales@ChipSourceTek.com Tony.Wang@ChipSourceTek.com FM3080SC N-Channel Trench Power MOSFET 矽源特科技 ChipSourceTek

第 6页 共 7页 Version1.0 Figure 4:Peak Diode Recovery dv/dt Test Circuit & Waveforms (For N-channel) TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 WEB:Http://www.ChipSourceTek.com E-mail: Sales@ChipSourceTek.com Tony.Wang@ChipSourceTek.com FM3080SC N-Channel Trench Power MOSFET 矽源特科技 ChipSourceTek

第 7页 共 7页 Version1.0 TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 WEB:Http://www.ChipSourceTek.com E-mail: Sales@ChipSourceTek.com Tony.Wang@ChipSourceTek.com FM3080SC N-Channel Trench Power MOSFET 矽源特科技 ChipSourceTek