FM2A030065K FS | Alldatasheet

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Technical content

TECHNICAL DATA FM2A030065K 2022. 07. 07 Revision No : 0 1/3 FM2A030065K N-Channel SiC Power MOSFET VDS = 650 V RDS(on) = 30 mΩ ID@25℃ = 55 A Features Package  2nd Generation SiC MOSFET Technology  High Blocking Voltage with Low On-Resistance  High Speed Switching with Low Capacitance  Fast Intrinsic Diode with Low Reverse Recovery (Qrr) Benefits  Higher System Efficiency  Reduced Cooling Requirements  Increased Power Density  Increased System Switching Frequency  Easy to Parallel and Simple to Drive  Enable Totem-Pole PFC Topologies

Applications

 EV Charging  Server Power Supplies  Solar PV Inverters  UPS  DC/DC Converters Part Number Package Marking FM2A030065K TO-247-3 FM2A030065K Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Value Unit TestConditions Note VDSmax Drain-Source Voltage, TC=25℃ 650 V VGS=0V, ID=100μA VGSmax Gate-Source Voltage -8/+22 V Absolute maximum values VGSop Gate-Source Voltage -5/+18 V Recommended operational values ID Continuous Drain Current A VGS=18V, Tc=25℃

39 VGS=18V, Tc=100℃

ID(pulse) Pulsed Drain Current 197 A Pulse width tp limited by TJmax PD Power Dissipation 187 W Tc=25℃, TJ=175℃ TJ, TSTG Operating Junction and Storage Temperature -55 to +175 ℃ TO-247-3

  1. 07. 07 Revision No : 0 2/3 Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit TestConditions Note V(BR)DSS Drain-Source Breakdown Voltage 650 / / V VGS=0V, ID=1mA VGS(th) Gate Threshold Voltage 1.8 2.6 4.3 V VDS=VGS, ID=10mA IDSS Zero Gate Voltage Drain Current / 1 50 µA VDS=650V, VGS=0V IGSS Gate-Source Leakage Current / 10 250 nA VDS=0V, VGS=22V RDS(on) Drain-Source On-State Resistance / 30 50 mΩ VGS=18V, ID=25A / 42 / VGS=18V, ID=25A, TJ=175℃ Ciss Input Capacitance / 1850 / VGS=0V, VDS=400V f=1MHz, VAC=25mVCoss Output Capacitance / 160 / pF Crss Reverse TransferCapacitance / 15 / EON Turn-On Switching Energy / 50 / µJ VDS=400V, VGS= -5V/18V ID=25A, RG(ext)=2.5Ω, L=100μHEOFF Turn-Off Switching Energy / 65 / td(on) Turn-On Delay Time / 14 / nstr Rise Time / 15 / VDS=400V, VGS= -5V/18V, ID=25A td(off) Turn-Off Delay Time / 28 / RG(ext)=2.5Ω, RL=16Ω tf Fall Time / 8 / RG(int) Internal Gate Resistance / 3 / Ω f=1MHz, VAC=25mV QGS Gate to Source Charge / 30 / VDS=400V QGD Gate to Drain Charge / 32 / nC VGS= -5V/18V QG TotalGate Charge / 110 / ID=25A Reverse Diode Characteristics Symbol Parameter Typ. Max. Unit TestConditions Note VSD Diode Forward Voltage 4.2 / V VGS= -5V, ISD=12.5A 3.8 / VGS= -5V, ISD=12.5A, TJ=175℃ IS Continuous Diode Forward Current / 45 A VGS= -5V, TC=25℃ trr Reverse Recover Time 25 / ns VR=400V, ISD=25AQrr Reverse Recovery Charge 100 / nC Irrm Peak Reverse Recovery Current 5 / A Thermal Characteristics Symbol Parameter Typ. Max. Unit TestConditions Note RθJC Thermal Resistancefrom Junction to Case / 0.8 ℃/W RθJA Thermal Resistance from Junction to Ambient / 40 FM2A030065K
  1. 07. 07 Revision No : 0 3/3 Package Dimensions Package TO-247-3 FM2A030065K