FM24CL04

FM24CL04 ETC | Alldatasheet

Document overview

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• PDF pages: 12

Technical content

Features

4K bit Ferroelectric Nonvolatile RAM

• Organized as 512 x 8 bits
• Unlimited Read/Writes
• 10 Year Data Retention
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface
• Up to 1 MHz maximum bus frequency
• Direct hardware replacement for EEPROM Low Power Operation
• 2.7V to 3.65V operation
• 75 µA Active Current (100 kHz) @ 3V
• 1 µA Standby Current Industry Standard Configuration
• Industrial Temperature -40° C to +85° C
• 8-pin SOIC

Description

The FM24CL04 is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. Unlike serial EEPROMs, the FM24CL04 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array in the cycle after it has been successfully transferred to the device. The next bus cycle may commence immediately. These capabilities make the FM24CL04 ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system. The FM24CL04 provides substantial benefits to users of serial EEPROM, yet these benefits are available in a hardware drop-in replacement. The FM24CL04 is available in an industry standard 8-pin package using a two-wire protocol. The specifications are guaranteed over an industrial temperature range of - 40°C to +85°C. Pin Configuration Pin Names Function A1-A2 Device Select Address 1 and 2 SDA Serial Data/Address SCL Serial Clock WP Write Protect VSS Ground VDD Supply Voltage 3V

Ordering Information

Figure 1. Block Diagram edges. A pull-up resistor is required. input also incorporates a Schmitt trigger input for improved noise immunity. all addresses may be written. This pin is internally pulled down.

Rev. 2.0 July 2003 Page 8 of 12

Applications

The versatility of FRAM technology fits into many diverse applications. Clearly the strength of higher write endurance and faster writes make FRAM superior to EEPROM in all but one-time programmable applications. The advantage is most obvious in data collection environments where writes are frequent and data must be nonvolatile. The attributes of fast writes and high write endurance combine in many innovative ways. A short list of ideas is provided here. 1. Data collection . In applications where data is collected and saved, FRAM provides a superior alternative to other solutions. It is more cost effective than battery backup for SRAM and provides better write attributes than EEPROM. 2. Configuration . Any nonvolatile memory can retain a configuration. However if the configuration changes and power failure is a possibility, the higher write endurance of FRAM allows changes to be recorded without restriction. Any time the system state is altered, the change can be written. This avoids writing to memory on power down when the available time is short and power scarce. 3. High noise environments . Writing to EEPROM in a noisy environment can be challenging. When severe noise or power fluctuations are present, the long write time of EEPROM creates a window of vulnerability during which the write can be corrupted. The fast write of FRAM is completed within a microsecond. This time is typically too short for noise or power fluctuation to disturb it. 4. Time to market . In a complex system, multiple software routines may need to access the nonvolatile memory. In this environment the time delay associated with programming EEPROM adds undue complexity to the software development. Each software routine must wait for complete programming before allowing access to the next routine. When time to market is critical, FRAM can eliminate this simple obstacle. As soon as a write is issued to the FM24CL04, it is effectively done -- no waiting. 5. RF/ID . In the area of contactless memory, FRAM provides an ideal solution. Since RF/ID memory is powered by an RF field, the long programming time and high current consumption needed to write EEPROM is unattractive. FRAM provides a superior solution. The FM24CL04 is suitable for multi-chip RF/ID products. 6. Maintenance tracking . In sophisticated systems, the operating history and system state during a failure is important knowledge. Maintenance can be expedited when this information has been recorded. Due to the high write endurance, FRAM makes an ideal system log. In addition, the convenient 2-wire interface of the FM24CL04 allows memory to be distributed throughout the system using minimal additional resources.

Rev. 2.0 July 2003 Page 9 of 12 Electrical Specifications Absolute Maximum Ratings Symbol Description Ratings VDD Power Supply Voltage with respect to V SS -1.0V to +5.0V VIN Voltage on any signal pin with respect to V SS -1.0V to +5.0V and VIN < VDD+1.0V * TSTG Storage Temperature -55°C to + 125°C TLEAD Lead Temperature (Soldering, 10 seconds) 300° C * Exception: The “VIN < VDD+1.0V” restriction does not apply to the SCL and SDA inputs. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only, and the functional operation of the device at these or any other conditions above those listed in the operational section of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability. DC Operating Conditions (TA = -40° C to + 85° C, VDD = 2.7V to 3.65V unless otherwise specified) Symbol Parameter Min Typ Max Units Notes VDD Main Power Supply 2.7 3.65 V IDD VDD Supply Current @ SCL = 100 kHz @ SCL = 400 kHz @ SCL = 1 MHz 150 300 µA µA µA ISB Standby Current 1 µA 2 ILI Input Leakage Current 10 µA 3 ILO Output Leakage Current 10 µA 3 VIH Input High Voltage 0.7 V DD V DD + 0.5 V 4 VIL Input Low Voltage -0.3 0.3 V DD V 4 VOL Output Low Voltage @ IOL = 3.0 mA 0.4 V RIN Input Resistance (WP, A2, A1) For VIN = VIL (max) For VIN = VIH (min) KΩ MΩ VHYS Input Hysteresis 0.05 V DD V 4 Notes 1. SCL toggling between VDD-0.3V and VSS, other inputs VSS or VDD-0.3V 2. SCL = SDA = VDD. All inputs VSS or VDD. Stop command issued. 3. VIN or VOUT = VSS to VDD 4. This parameter is periodically sampled and not 100% tested.

Rev. 2.0 July 2003 Page 10 of 12 AC Parameters (TA = -40° C to + 85° C, VDD = 2.7V to 3.65V, CL = 100 pF unless otherwise specified) Symbol Parameter Min Max Min Max Min Max Units Notes fSCL SCL Clock Frequency 0 100 0 400 0 1000 kHz tLOW Clock Low Period 4.7 1.3 0.6 µs tHIGH Clock High Period 4.0 0.6 0.4 µs tAA SCL Low to SDA Data Out Valid 3 0.9 0.55 µs tBUF Bus Free Before New Transmission 4.7 1.3 0.5 µs tHD:STA Start Condition Hold Time 4.0 0.6 0.25 µs tSU:STA Start Condition Setup for Repeated Start 4.7 0.6 0.25 µs tHD:DAT Data In Hold 0 0 0 ns tSU:DAT Data In Setup 250 100 100 ns tR Input Rise Time 1000 300 300 ns 1 tF Input Fall Time 300 300 100 ns 1 tSU:STO Stop Condition Setup 4.0 0.6 0.25 µs tDH Data Output Hold (from SCL @ VIL) 0 0 0 ns tSP Noise Suppression Time Constant on SCL, SDA 50 50 50 ns Notes : All SCL specifications as well as start and stop conditions apply to both read and write operations. 1 This parameter is periodically sampled and not 100% tested. Capacitance (TA = 25° C, f=1.0 MHz, VDD = 3V) Symbol Parameter Max Units Notes CI/O Input/output capacitance (SDA) 8 pF 1 CIN Input capacitance 6 pF 1 Notes 1 This parameter is periodically sampled and not 100% tested. AC Test Conditions Input Pulse Levels 0.1 V DD to 0.9 VDD Input rise and fall times 10 ns Input and output timing levels 0.5 V DD Equivalent AC Load Circuit

Rev. 2.0 July 2003 Page 11 of 12 Diagram Notes All start and stop timing parameters apply to both read and write cycles. Clock specifications are identical for read and write cycles. Write timing parameters apply to slave address, word address, and write data bits. Functional relationships are illustrated in the relevant data sheet sections. These diagrams illustrate the timing parameters only. Read Bus Timing Write Bus Timing Data Retention (VDD = 2.7V to 3.65V unless otherwise specified) Parameter Min Units Notes Data Retention 10 Years 1 Notes 1. The relationship between retention, temperature, and the associated reliability level is characterized separately.

Rev. 2.0 July 2003 Page 12 of 12 8-pin SOIC (JEDEC Standard MS-012 variation AA) Controlling dimensions in millimeters. Conversions to inches are not exact. Symbol Dim Min Nom. Max A mm in. 1.35 0.053 1.75 0.069 A1 mm in. 0.10 0.004 0.25 0.010 B mm in. 0.33 0.013 0.51 0.020 C mm in. 0.19 0.007 0.25 0.010 D mm in. 4.80 0.189 5.00 0.197 E mm in. 3.80 0.150 4.00 0.157 e mm in.

1.27 BSC

0.050 BSC

in. 5.80 0.228 6.20 0.244 h mm in. 0.25 0.010 0.50 0.197 L mm in. 0.40 0.016 1.27 0.050 α 0° 8°