FM240N04D9 GWSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 6
Technical content
Features
SGT LV MOSFET technology Excellent Qg*Ron product (FOM) Extremely low on-resistance (Ron) Application Battery management High current switching UPS Top View Bottom View Key Performance Parameters Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID@Tc=25℃ Continuous Drain Current, VGS=10V 240 A ID@Tc=100℃ Continuous Drain Current, VGS=10V 200 A IDM Pulsed Drain Current 800 A EAS Single Pulse Avalanche Energy 416 mJ PD@Tc=25℃ Total Power Dissipation 173 W TSTG Storage Temperature Range -55 to 150 ℃ Tj Operating Junction Temperature Range -55 to 150 ℃ N-Channel MOSFETFM240N04D9 Pin Configuration VDS 40 V Rds(on), typ@Vgs=10V 1.0 mΩ Rds(on), typ@Vgs=4.5V 1.6 mΩ ID 240 A Thermal Data Symbol Parameter Typ Max Units RθJA Thermal Resistance Junction-Ambient 54 62.5 ℃/W RθJC Thermal Resistance Junction-Case 0.62 0.72 ℃/W
Electrical Characteristics (TJ=25 ℃, Unless otherwise noted) Symbol Parameter Values Unit Note / Test Condition Min. Typ. Max. BVDSS Drain-Source Breakdown Voltage 40 -- -- V VGS=0V, ID=250uA RDS(ON) Static Drain-Source On-Resistance -- 1.0 1.3 mΩ VGS=10V, ID=50A -- 1.6 2.1 VGS=4.5V, ID=20A VGS (th) Gate Threshold Voltage 1 1.6 2.5 V VGS=VDS, ID=250uA IDSS Drain-Source Leakage Current -- -- 1 uA VDS=40V, VGS=0V, TJ=25℃ -- -- 10 uA VDS=32V, VGS=0V, TJ=125℃ IGSS Gate-Source Leakage Current -- -- ±100 n A VGS=±20V, VDS=0V gfs Forward Transconductance -- 110 -- S VDS=20V, ID=50A Rg Gate Resistance -- 4 -- Ω VDS=0V, VGS=0V, f=1MHz Qg Total Gate Charge -- 86.9 -- nC VDS=20V, VGS=5V, ID=50A Qgs Gate-Source Charge -- 18 -- Qgd Gate-Drain Charge -- 15.4 -- Td(on) Turn-On Delay Time -- 26 -- ns VDD=20V, VGS=10V, RG=3Ω ID=50A Tr Rise Time -- 19 -- Td(off) Turn-Off Delay Time -- 85 -- Tf Fall Time -- 19 -- Ciss Input CapacitanceS -- 5609 -- pF VDS=20V, VGS=0V, f=1MHz Coss Output Capacitance -- 2043 -- Crss Reverse Transfer Capacitance -- 128 -- Diode Characteristics Symbol Parameter Conditions Min Typ Max Units Is Continuous Source Current VG=VD=0V, Force Current -- -- 240 A Ism Pulsed Source Current -- -- 960 A Trr Body Diode Reverse Recovery Time IF=50A, di/dt=100A/us -- 80 -- ns Qrr Body Diode Reverse Recovery Charge -- 190 -- nC VSD Diode Forward Voltage VGS=0V, IS=50A, TJ=25℃ -- -- 1.4 V Note: 1. Repetitive Rating: Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed, pulse width≦300us, duty cycle≦2%. 3. Essentially independent of operating temperature. N-Channel MOSFETFM240N04D9
Typical Performance Characteristics Fig1 Output Characteristics Fig2 Normalized RDSON vs. TJ Fig3 Gate Charge Waveform Fig5 Rds(on) vs. Drain Current and Gate Voltage Fig6 Rds(on) vs. Gate Voltage N-Channel MOSFETFM240N04D9 Fig7 Capacitance Characteristics Fig8 Drain Current Derating Fig4 Transfer Characteristics
Fig9 Power Dissipation Fig10 Source-Drain Diode Forward Characteristics Fig11 Normalized Threshold Voltage vs. TJ Fig12 Normalized Breakdown Voltage vs. TJ Typical Performance Characteristics N-Channel MOSFETFM240N04D9 Fig13 Maximum Safe Operation Area Fig14 Normalized Transient Impedance
N-Channel MOSFETFM240N04D9 Test Circuit & Waveform Unclamped Inductive Switching Test Circuit & Waveform Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform
N-Channel MOSFETFM240N04D9 Top View Side View Bottom View Front View Plastic surface mounted package; 8 leads TOLL PACKAGE OUTLINE