FM2310 FUTUREWAFER | Alldatasheet

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www.futurewafer.com.tw N-Channel Enhancement Mode Field Effect Transistor Document Number:F52018L 14-Nov-2021 V 2.0 SOT-23 5. Device Characteristics Maximum Ratings@25°C Unless Otherwise Specified Parameter Symbol Value Units Drain-Source Voltage V DS 60 V Gate-Source Voltage V GS ±20 Drain Current TA = 25°C@ Steady State I D 3.0 A TA = 70°C@ Steady State 2.4 Pulsed Drain Current I DM 12 Total Power Dissipation @ TA = 25°C P D 1.2 W Junction Temperature Range T J °C -55 to +150 Storage Temperature Range T STG G D S 6. Thermal Characteristics Parameter Symbol Values Unit Min. Typ. Max. Thermal Resistance, Junction-Case R thJC - 62 - °C/W Thermal Resistance, Junction-Ambient R thJA - 104 - G S D 1. Application

  • PWM Application
  • Load Switch 2. Feature
  • Trench Power LV MOSFET Technology
  • High Power And Current Handing Capability 3. Benefits
  • Essentially No Switching Losses
  • Higher Efficiency
  • Reduction of Heat Sink Requirements
  • Parallel Devices Without Thermal Runaway
  • Higher System Reliability Due to Lower Operating Temperatures 4. Mechanical Characteristics
  • Molded JEDEC Package - SOT 23
  • Packing: Tape and Reel
  • Flammability Rating UL 94V-0
  • Halogen Free
  • JEDEC MSL Classification :Level 1

www.futurewafer.com.tw N-Channel Enhancement Mode Field Effect Transistor Document Number:F52018L 14-Nov-2021 V 2.0 7. Electrical Characteristics Parameter Symbol Condition Values Unit Min. Typ. Max. Static Parameter Drain-Source Breakdown Voltage BV DSS VGS = 0V,ID = 250uA 60 - - V Diode Forward Voltage V SD IS = 3.0A,VGS = 0V - - 1.2 Zero Gate Voltage Drain Current I DSS VDS = 60V,VGS = 0V,TC = 25°C - - 1 uA Gate-Body Leakage Current I GSS VGS = ±20V,VDS = 0V - - ±100 nA Static Drain-Source On-Resistance R DS(ON) VGS = 4.5V,ID = 2.0A - 92 120 mΩ VGS = 10V,ID = 3.0A - 86 100 Maximum Body-Diode Continuous Current I S - - - 6.8 A Dynamic Parameters Input Capacitance C iss VDS = 30V,VGS = 0V, f = 1MHz - 330 - pF Output Capacitance C oss - 90 - Reverse Transfer Capacitance C rss - 17 - Switching Parameters Total Gate Charge Q g VGS = 10V,VDS = 30V, ID = 3.0A - 5.1 - nC Gate Source Charge Q gs - 1.3 - Gate Drain Charge Q gd - 1.7 - Turn-on Delay Time t D(on) VGS = 10V,VDD = 30V, RL = 1Ω,RGEN = 3Ω - 13 - nS Turn-on Rise Time t r - 51 - Turn-off Delay Time t D(off) - 19 - Turn-off Fall Time t f - 12 - Fig 1.Output Characteristics Drain Current, ID (A) Drain-Source Voltage, VDS (V) Drain Current, ID (A) Fig 2.Transfer Characteristics Gate-Source Voltage, VGS (V) 8. Electrical Characteristics Diagrams 10V 5.0V 4.0V 3.0V VGS=2.0V 25°C 125°C

www.futurewafer.com.tw N-Channel Enhancement Mode Field Effect Transistor Document Number:F52018L 14-Nov-2021 V 2.0 Www.futurewafer.com.tw Fig 5.Drain-Source on Resistance Rdson on-Resistance (mΩ) Junction Temperature, Tj (°C) Normalizad On-Resistance Fig 6.Drain-Source on Resistance VGS=10V VGS=4.5V Drain Current, ID (A) Fig 7.Safe Operation Area Drain Current, ID (A) Drain-Source Voltage, VDS (V) TJ (Max)= 150 °C TA = 25 °C Single Pulse Fig 8.Switching wave VDS=10V Ciss 8. Electrical Characteristics Diagrams Fig 3.Capacitance Characteristics Fig 4.Gate Charge Gate Charge, Qg (nC) Gate-Source Voltage (V) Drain-Source Voltage, VDS (V) Capacitance (pF) Coss Crss VGS=10V RDS(ON) limited DC 100ms 10ms 1ms 100us 10us VOUT Pulse Width Inverted 10% 50% 50% 90% 90% 10% 10% 90% td(on) td(on) toff tf td(off) VGS=4.5V Document Number:F52018L Revision:20-Apr-2020 Version A

www.futurewafer.com.tw N-Channel Enhancement Mode Field Effect Transistor Document Number:F52018L 14-Nov-2021 V 2.0 9. Soldering Parameters

www.futurewafer.com.tw N-Channel Enhancement Mode Field Effect Transistor Document Number:F52018L 14-Nov-2021 V 2.0 10. Package Outline 11. Suggested Pad Layout SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 8°C Dimension Millimeter Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35

www.futurewafer.com.tw N-Channel Enhancement Mode Field Effect Transistor Document Number:F52018L 14-Nov-2021 V 2.0 Futurewafer Technology Co.,Ltd 台灣未來芯科技股份有限公司 Tel ：+886-3-3350161/FAX ：+886-3-3350172 cherry@futurewafer.com.tw No. 286-11F, Sec. 3, Sanmin Rd., Taoyuan Dist., Taoyuan City 330, Taiwan 12. Ordering Information Part Number Marking Component Package Quantity Packaging Option FM2310 S10 SOT-23 3,000PCS Tape&Reel-8mm tape / 7” Reel 13. History Version Date File No. Recording Basis A 20-Apr-2020 New Create Market F52018L 2.0 14-Nov-2021 Update Version System