FM2304DS FUTUREWAFER | Alldatasheet

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Technical content

Enhancement Mode Field Effect Transistor Document No.: F51939U 27-NOV-2021 V 2.1 www.futurewafer.com.tw FQE-001-04 1. Synopsis 1-1. Feature List

  • Trench Power LV MOSFET Technology
  • High Power And Current Handing Capability 1-2. Applications
  • PWM Application
  • Load Switch 1-3. Benefits
  • Essentially No Switching Losses
  • Higher Efficiency
  • Reduction of Heat Sink Requirements
  • Parallel Devices Without Thermal Runaway
  • Higher System Reliability Due to Lower Operating Temperatures 1-4. Mechanical Characteristics
  • Molded JEDEC Package : SOT23
  • Packing: Tape and Reel
  • Flammability rating UL 94V -0
  • Halogen Free
  • JEDEC MSL Classification: LEVEL 1 1-5. Device Characteristics 1-6. Thermal Characteristics G D S SOT23 G S D

Enhancement Mode Field Effect Transistor Document No.: F51939U 27-NOV-2021 V 2.1 www.futurewafer.com.tw FQE-001-04 2. Contents

Enhancement Mode Field Effect Transistor Document No.: F51939U 27-NOV-2021 V 2.1 www.futurewafer.com.tw FQE-001-04 3. Electrical Property 3-1. Electrical Characteristics 3-2. Ratings and Characteristics Curve-Fig 1~2 Fig 1. Output Characteristics Drain Current, I D (A) Drain-Source Voltage, V DS (V) Drain Current, I D (A) Fig 2. Transfer Characteristics Gate-Source Voltage, V GS (V) V DS = 5V 25°C 125°C 10V 4.5V 3.5V V GS = 3V

Enhancement Mode Field Effect Transistor Document No.: F51939U 27-NOV-2021 V 2.1 www.futurewafer.com.tw FQE-001-04 3-2. Ratings and Characteristics Curve-Fig 3~8 Fig 7. Safe Operation Area Drain Current, I D (A) Drain-Source Voltage, V DS (V) T J(Max) = 150°C T A = 25°C Single Pulse Fig 8. Switching Wave R DS(ON) Limited DC 100ms 10ms 1ms 100us 10us Fig 5. Drain-Source On Resistance R DS(on) On-Resistance (mΩ) Junction Temperature, T J (°C) R DS(on) On-Resistance (mΩ) Fig 6. Drain-Source On Resistance V GS = 10V Drain Current, I D (A) V DS = 15V C iss Fig 3. Capacitance Characteristics Fig 4. Gate Charge Characteristics Gate Charge, Q g (nC) Gate-Source Voltage, V GS (V) Drain-Source Voltage, V DS (V) Capacitance (pF) C oss C rss V GS = 4.5V V GS = 10V

Enhancement Mode Field Effect Transistor Document No.: F51939U 27-NOV-2021 V 2.1 www.futurewafer.com.tw FQE-001-04 4. Soldering Parameters

Enhancement Mode Field Effect Transistor Document No.: F51939U 27-NOV-2021 V 2.1 www.futurewafer.com.tw FQE-001-04 5. Package Information 5-1. Dimension 5-2. PCB Pad Layout Recommendation Unit:mm

Enhancement Mode Field Effect Transistor Document No.: F51939U 27-NOV-2021 V 2.1 www.futurewafer.com.tw FQE-001-04 6. Packing 6-1. Taping and Reel Specification Taping Width Tape Orientation 8mm 6-2. Embossed Carrier Tape Specification Direction Of Feed Unit:mm

Enhancement Mode Field Effect Transistor Document No.: F51939U 27-NOV-2021 V 2.1 www.futurewafer.com.tw FQE-001-04 6-3. Surface Mount Reel Specification 6-4. Tape Leader and Trailer Specification Unit:mm

Enhancement Mode Field Effect Transistor Document No.: F51939U 27-NOV-2021 V 2.1 www.futurewafer.com.tw FQE-001-04 7. Ordering Information 8. Version 8-1. History 8-2. Company Profile Futurewafer Tech Co., Ltd. 台灣未來芯科技股份有限公司 TEL: +886-3-3350161 / FAX: +886-3-3350172 cherry@futurewafer.com.tw No. 286-11F, Sec. 3, Sanmin Rd., Taoyuan Dist., Taoyuan City 330, Taiwan