FM2058NPK FUTUREWAFER | Alldatasheet

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N and P Channel Enhancement Mode MOSFET Document No.: F51937S 13-DEC-2021 V 2.1 www.futurewafer.com.tw FQE-001-04 1. Synopsis 1-1. Feature List

  • Low On -Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input / Output Leakage
  • ESD Protected Up to 4KV (HBM) 1-2. Applications
  • Logic Level Shift
  • Interface Switching
  • Load / Power Switching
  • Battery Management 1-3. Mechanical Characteristics
  • Molded JEDEC Package : SOT363
  • Packing: Tape and Reel
  • Flammability rating UL 94V -0
  • Halogen Free
  • JEDEC MSL Classification: LEVEL 1 1-4. Device Characteristics 1-5. Thermal Characteristics SOT363

N and P Channel Enhancement Mode MOSFET Document No.: F51937S 13-DEC-2021 V 2.1 www.futurewafer.com.tw FQE-001-04 2. Contents

N and P Channel Enhancement Mode MOSFET Document No.: F51937S 13-DEC-2021 V 2.1 www.futurewafer.com.tw FQE-001-04 3. Electrical Property 3-1. N-MOS Electrical Characteristics 3-2. Ratings and Characteristics Curve-Fig 1~2 Fig 1. Output Characteristics Drain Current, I D (A) Drain-Source Voltage, V DS (V) Drain Current, I D (A) Fig 2. Transfer Characteristics Gate-Source Voltage, V GS (V)

N and P Channel Enhancement Mode MOSFET Document No.: F51937S 13-DEC-2021 V 2.1 www.futurewafer.com.tw FQE-001-04 3-2. Ratings and Characteristics Curve-Fig 3~8 Fig 7. Safety Operation Area Drain Current, I D (A) Drain-Source Voltage, V DS (V) Fig 8. Power Dissipation Fig 5. Drain Source Leakage Current vs. T J Drain Source Leakage Current, I DSS (uA) Junction Temperature, T J (°C) Normalized Drain-Source On-Resistance Fig 6. On Resistance vs. T J Junction Temperature, T J (°C) Fig 3. Capacitance Characteristics Fig 4. Gate Charge Characteristics Gate Charge, Q g (nC) Gate-Source Voltage, V GS (V) Drain-Source Voltage, V DS (V) Capacitance (pF) P tot, (W) Ambient Temperature, T A (°C)

N and P Channel Enhancement Mode MOSFET Document No.: F51937S 13-DEC-2021 V 2.1 www.futurewafer.com.tw FQE-001-04 3-3. P-MOS Electrical Characteristics 3-4. Ratings and Characteristics Curve-Fig 9~10 Fig 9. Output Characteristics Drain Current, I D (A) Drain-Source Voltage, V DS (V) Drain Current, I D (A) Fig 10. Transfer Characteristics Gate-Source Voltage, V GS (V)

N and P Channel Enhancement Mode MOSFET Document No.: F51937S 13-DEC-2021 V 2.1 www.futurewafer.com.tw FQE-001-04 3-4. Ratings and Characteristics Curve-Fig 11~16 Fig 15. Safety Operation Area Drain Current, I D (A) Drain-Source Voltage, V DS (V) Fig 16. Power Dissipation Fig 13. Drain Source Leakage Current vs. T J Drain Source Leakage Current, I DSS (uA) Junction Temperature, T J (°C) Normalized Drain-Source On-Resistance Fig 14. On Resistance vs. T J Junction Temperature, T J (°C) Fig 11. Capacitance Characteristics Fig 12. Gate Charge Characteristics Gate Charge, Q g (nC) Gate-Source Voltage, V GS (V) Drain-Source Voltage, V DS (V) Capacitance (pF) P tot, (W) Ambient Temperature, T A (°C)

N and P Channel Enhancement Mode MOSFET Document No.: F51937S 13-DEC-2021 V 2.1 www.futurewafer.com.tw FQE-001-04 4. Soldering Parameters

N and P Channel Enhancement Mode MOSFET Document No.: F51937S 13-DEC-2021 V 2.1 www.futurewafer.com.tw FQE-001-04 5. Package Information 5-1. Dimension 5-2. PCB Pad Layout Recommendation Unit:mm Unit:mm

N and P Channel Enhancement Mode MOSFET Document No.: F51937S 13-DEC-2021 V 2.1 www.futurewafer.com.tw FQE-001-04 6. Ordering Information 7. Version 7-1. History 7-2. Company Profile Futurewafer Tech Co., Ltd. 台灣未來芯科技股份有限公司 TEL: +886-3-3350161 / FAX: +886-3-3350172 cherry@futurewafer.com.tw No. 286-11F, Sec. 3, Sanmin Rd., Taoyuan Dist., Taoyuan City 330, Taiwan