FM200HB1D5B KEC | Alldatasheet
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Technical content
- 7. 24 1/2 SEMICONDUCTOR TECHNICAL DATA FM200HB1D5B Revision No : 0 150V / 200A 2 - PACK MOSFET MODULE (Half - Bridge)
FEATURES
hLow RDS(on) hHigh frequency operation hdv/dt ruggedness hFast switching APPLICATION hMotor control hBattery management system hElectric vehicle INTERNAL CIRCUIT CHARACTERISTIC SYMBOL RATING UNIT Drain-to-Source Breakdown Voltage VDSS 150 V Gate to Source Voltage VGSS 30 V Continuous Drain Current @TC=25 ID 340 A @TC=100 240 Pulsed Drain Current @TC=25 , Pulsed IDM 1300 A Isolation Voltage Test AC@1minute VISO 2500 V Junction Temperature TJ -40q+150 Storage Temperature Tstg -40q+125 Weight Weight 3605 g Mounting Torque (M6) M 5 N m Terminal Connection Torque (M5) M 4 N m 1 2 1. D2/S1 2. S2 3. D1 4. G1 5. S1 6. G2 7. S2 MAXIMUM RATING (@Tc=25 Per Leg, Unless otherwise noted) OUTLINE DRAWING Unit : mm+_ 13 0.3+_ 14 0.3+_ 13 0.3+_ 13 0.3+_ 17 0.3+_ 6 0.5 35 0.5+_ 28 0.5+_ 25 0.3+_ 17 0.3+_ 93 0.5+_ 80 0.5+_ 23 0.3+_+_23 0.3 30 0.5+_ 22 0.5+_ +_30 0.5 +_31 0.5
- 7. 24 2/2 FM200HB1D5B Revision No : 0 ELECTRICAL CHARACTERISTICS (@Tc=25 Per Leg, Unless otherwise noted) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=250ɵ , VGS=0V 150 - - V Gate Threshold Voltage Vth VDS=VGS, ID=250ɵ 3.0 - 5.0 V Drain to Source Leakage Current IDSS VDS=150V, VGS=0V - - 40 ǺA Gate to Source Leakage Current IGSS VGS=20V - - 200 nA VGS=-20V - -200 nA Drain to Source ON Resistance RDS(ON) VGS=10V, ID=200A - 3.3 4.0 mʃ Dynamic Total Gate Charge Qg ID=200A, VDS=75V, VGS=10V - 300 - nCGate to Source Charge Qgs - 100 - Gate to Source Charge Qgd - 110 - Turn On Delay Time td(on) VDS=75V, ID=200A, RG=3.3ʃ - TBD - ns Rise Time tr - TBD - Turn Off Delay Tine td(off) - TBD - Fall Time tf - TBD - Input Capacitance Ciss VDS=50V, VGS=0V, f=1ʀ - 20 - nFOutput Capacitance Coss - 2 - Reverse Transfer Capacitance Crss - 0.4 - Source-Drain Diode Ratings Continuous Source Current IS - - 340 A Pulsed Source Current ISP - - 1300 Diode Forward Voltage VSD ID=200A, VGS=0V - 1.0 1.3 V Reverse Recovery Time trr VR=75V, ID=200A, di/dt=-100A/us - TBD - ns Reverse Recovery Charge Qrr - TBD - nC