FM03N65D GWSEMI | Alldatasheet

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■Low On-Resis tance ■Fas t Switching ■High Resistance ■RoHS Compliant Application ■Electronic Ballast ■Electronic Transformer ■Switch Model Power Supply Pin Configuration Absolute Maximum Ratings (TJ=25C） VDS 650 V Rds (on),typ@Vgs=10V 2.6 mΩ ID 3 A *Drain current limited by maximum junction temperature FM03N65D N-Channel MOSFET TO-252 Thermal Characteristics Sy mbol Parameter MA X Units RθJC T hermal Resistance Junction-Case 1.25 ℃/W RθJA T hermal Resistance Junction-Ambient 62.5 ℃/W Parameter Values Unit Drain-source Voltage 650 Gate-source Voltage ±30 V Continuous Drain Current Continuous Drain Current Drain Current －Pulsed (1) 12* Power Dissipation W Junction Temperature 150 ℃ Storage Temperature -55-150 ℃ Si ngle Pulse Avalanche Energy (2 ) 157 Sy mbol VDS VGS ID ID IDM PD TSTG EAS Tj .0* 1.95* A A A V 100 mJ T c=25℃ T c=100℃

Electronic Characteristics (Tj=25 o Symbol Parameter Note / Test Condition Min Typ Max Drain-source Breakdown Voltage 650 V V GS =0V, I D =250uA R Breakdown Voltage Temperature Coefficient 0 . 6 V/ o C ID=250uA, Referenced V Gate Threshold Voltage 2.0 4.0 V GS DS , I D =250uA I DSS Drain-source Leakage Current 1 uA DS =650V, V GS =0V 1 0 V DS =480V, V GS =0V, Tj=125 o C Forward Transconductance 3 . 0 S V DS =15V, I D =1.5A (3) IGSS Gate-body Leakage Current (V DS = 0) ±100 nA V GS =±30V R DS(ON) Static Drain-source On Resistance 2.6 3.0 Ω V GS =10V, ID=1.5A (3) Input Capacitance 401 pF V GS = 0V, V DS = 25V F =1.0MHZ Output Capacitance 5 5 Reverse transfer Capacitance 1 1 Turn -Off Delay Time 3 5 ns V DD =300V, I D =3.0A, R G =25Ω (3) Total Gate Charge 8 . 8 I D =2.0A, V DS = 20V, V GS =10V (3) Gate-to-Source Charge 2.1 nC Gate-to-Drain Charge 3.2 Diode Characteristics Conditions Min Typ Max Units I S Continuous Diode Forward Current 3 . 0 A V SD Diode Forward Voltage Is=3.0A V GS =0V (3) 1 . 4 V Trr Reverse Recovery Time If=3.0A di/dt=100A/μs (3) 9 2 ns Qrr Reverse Recovery Charge 0 . 2 4 uC Note: (1) Repetitive rating: Pulse width limited by maximum junction temperature (2) Starting Tj=25 o C, V DD =50V, L=36mH, R G =25Ω, I AS =3.0A (3) Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% FM03N65D N-Channel MOSFET ParameterSymbol Values Unit BVDSS GS (th) DS(ON) gfs Ciss Coss Crss Td(off) Qg Qgs Qgd V V uA

Fig1 Typical Output Characteristics, Tc=25℃ Fig2 Typical Output Characteristics, Tc=150 ℃ Fig3 Typical Source-Drain Diode Forward Voltage Fig4 Maximum Dr ain Current Vs. Case Temperature Fig5 Maximum Safe Operating Area —6V-15V —5V —4.5V —4V —6V-15V —5V —4.5V —4V —3V Typical Performance Characteristics FM03N65D N-Channel MOSFET

UNIT: mm SYMBOL min max SYMBOL min max A 2.20 2.40 B 0.85 1.25 b 0.50 0.80 C 0.45 0.70 b1 0.45 0.70 D 6.30 6.70 D1 5.10 5.50 E 5.30 6.20 L1 9.20 10.60 F 0.50 0.90 L2 0.90 1.50 e1 2.25 2.35 L3 0.60 1.10 e2 4.50 4.70 K 0.00 0.18 TO-252 PACKAGE OUTLINE FM03N65D N-Channel MOSFET