FLU17ZM FUJITSU | Alldatasheet

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Technical content

L-Band Medium & High Power GaAs FET

FEATURES

・High Output Power: P1dB=32.5dBm(typ.) ・High Gain: G1dB=12.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available

DESCRIPTION

The FLU17ZM is a GaAs FET designed for base station and CPE applications. This is a new product series using a plastic surface mount package that has been optimized for high volume cost driven applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25℃) ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25℃) CASE STYLE: ZM Note 1: Product supplied to this specification are 100% DC performance tested. Note 2: The RF parameters are measured on a lot basis by sample testing 10 pcs/lot. Acceptance Criteria:(accept/reject)=(0/1). Any lot failure shall be 100% retested. Edition 1.1 May 2003 1 Recommended Operating Condition (Case Temperature Tc=25℃) FLU17ZM ESD Class Ⅱ 500 ～ 1999 V Note : Based on EIAJ ED-4701 C-111A (C=100pF,R=1.5k Ω) Transconductance LimitItem Symbol Test Conditions Unit Drain Current Pinch-off Voltage Gate-Source Breakdown Voltage IDSS gm Vp VGSO mA V dBm Min. Typ. Max. Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. P1dB G1dB mS V dB - 300 - -1.0 -2.0 -3.5 -5 - - 31.5 32.5 - 11.5 12.5 - VDS=10V, f=2.0GHz, IDS=0.6IDSS(Typ.) VDS=5V, VGS=0V Thermal Resistance Rth ℃/W- 12 15Channel to Case - 600 900 VDS=5V, IDS=400mA VDS=5V, IDS=30mA IGS=-30uA G.C.P.:Gain Compression Point Item Symbol Rating Unit Drain-Source Voltage Gate-Soutce Voltage Total Power Dissipation Storage Temperature VDS VGS PT Tstg 8.3 -55 to +150 V V W Channel Temperature Tch 150 ℃ Item Symbol Condition Unit DC Input Voltage Channel Temperature Forward Gate Current Reverse Gate Current VDS Tch Igsf Igsr ≤ 10 ≤ 145 ≤ 9..6 ≥-1.0 V mA mA Gate Resistance Rg 200 Ω

L-Band Medium & High Power GaAs FET OUTPUT POWER & POWER ADDED EFFICIENCY vs. INPUT POWER POWER DERATING CURVE SMALL SINGLE R.L. vs FREQUENCY 0 20 40 60 80 100 120 140 160 Case Temperature [℃] Total Power Dissipation [W] 4 6 8 1 01 21 41 61 82 02 22 4 Input Power [dBm] Output Power [dBm] 100 Power Added Efficiency [%] f = 2.0GHz, VDS = 10V, IDS = 0.6IDSS P.A.E. Pout Wide Band Tuning (1.8GHz ～ 2.2GHz) -35 -30 -25 -20 -15 -10 Frequency [GHz] Small Signal R.L. & Isolation [dB] Small Signal Gain [dB] S11 S12 S22 S21

L-Band Medium & High Power GaAs FET ■ S-PARAMETER VDS = 10V, IDS = 360mA S11 S22 2.02. 0 25Ω 50Ω 3. 0 1. 0GHz 3. 0 1. 0GHz 0 ∞ +10j +25j +50j +100j +250j -10j -25j -50j -100j -250j 100 Ω 10Ω S12 S21 0.6 0.4 10±180° 0° -90° +90° Scale for |S 21| Scale for | S 12| 2.0 1.0GHz 3.0 Freq [GHz] MAG ANG MAG ANG MAG ANG MAG ANG S11 S21 S12 S22

L-Band Medium & High Power GaAs FET OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER @ VDS = 10V, IDS = 0.6IDSS OUTPUT POWER vs. FREQUENCY 6 8 10 12 14 16 18 20 22 24 26 Input Power [dBm] Output Power [dBm] 250 300 350 400 450 Drain Current [mA] Pout Ids[mA] P.A.E. Pin-Pout @f = 1.8GHz Power Added Efficiency[%] Pin-Pout @f = 2.0GHz 6 8 10 12 14 16 18 20 22 24 26 Input Power [dBm] Output Power [dBm] 250 300 350 400 450 Drain Current [mA] Pout Ids[mA] P.A.E. Power Added Efficiency[%] Pin-Pout @f = 2.2GHz 6 8 10 12 14 16 18 20 22 24 26 Input Power [dBm] Output Power[dBm] 250 300 350 400 450 Drain Current [mA] Pout Ids[mA] P.A.E. Power Added Efficiency[%]15 1.7 1.9 2.1 2.3 Frequency [GHz] Input Power[dBm] Pin=10dBm Pin=15dBm Pin=20dBm Pin=25dBm Pin=28dBm P1dB

L-Band Medium & High Power GaAs FET W-CDMA SINGLE CARRIER CCDF AND GAIN W-CDMA SINGLE CARRIER ACLR IMD vs OUTPUT POWER(2-tone) W-CDMA, 2-CARRIER IMD(ACLR) Note : *All signals are W-CDMA modulated at 3GPP3.4.12-00 BS-1 64ch non clipping. @ VDS = 10V, IDS = 0.6IDSS -80 -70 -60 -50 -40 -30 -20 -10 15 20 25 30 35 2-tone total Pout [dBm] @∆f=+5MHz IMD [dBc] IM3@1.8GHz IM5@1.8GHz IM3@2.0GHz IM5@2.0GHz IM3L dBc IM5L dBc *fo=2.1325GHz *f1=2.1475GHz -60 -55 -50 -45 -40 -35 -30 -25 18 19 20 21 22 23 24 25 26 27 28 2-tone total Pout [dBm] ACLR(IMD) [dBc] IM3-L IM3-U IM5-L IM5-U *fo=2.1325GHz -60 -55 -50 -45 -40 -35 -30 -25 20 21 22 23 24 25 26 27 28 29 30 Output Pow er[dBm] ACLR [dBc] -5MHz +5M Hz -10MHz +10MHz *fo=2.1325GHz 18 23 28 Output Pow er [dBm ] CCDF,Gain [dB] 0.01% Peak Gain

■ Recommended Bias Circuit and Internal Block Diagram L-Band Medium & High Power GaAs FET * Board was tuned for wide band performance with data shown on pages 4 and 5. <Board information> εr=3.5, t=0.8

■ Package Outline L-Band Medium & High Power GaAs FET

For further information please contact : FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (© 2003 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0202M200 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by- products are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. L-Band Medium & High Power GaAs FET FUJITSU QUANTUM DEVICES LIMITED Business Development Division 11th Floor, Hachioji Daiichi-Seimei Bldg. 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582 FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269