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Technical content

Features

 Cost-Effective Solution without Input Bulk Capacitor and Feedback Circuitry  Power-Factor Correction (PFC)  Integrated Power MOSFET  Accurate Constant-Current (CC) Control Independent Online Voltage, Output Voltage, and Magnetizing Inductance Variation  Linear Frequency Control for Increased Efficiency  Open / Short-LED Protection  Cycle-by-Cycle Current Limiting  Over-Temperature Protection with Auto Restart  Low Startup Current: 20μA  Low Operating Current: 5mA  VDD Over-Voltage Protection (OVP)  VDD Under-Voltage Lockout (UVLO)  Application Voltage Range: 80VAC ~ 308VAC

Applications

 LED Lighting System

Description

This highly integrated PWM controller with power MOSFET, FLS3217 / FLS3247, provides several features to enhance the performance of low-power flyback converters. The proprietary topology enables simplified circuit design for LED lighting applications. By using the single-stage topology with primary-side regulation, an LED lighting board can be implemented with the few external components and minimized cost; requiring no input bulk capacitor or feedback circuitry. To implement good power factor and low THD, constant on-time control is utilized with an external capacitor connected to COMI. Precise constant-current control regulates accurate output current versus changes in input voltage and output voltage. The operating frequency is proportionally changed by the output voltage to guarantee DCM operation with higher efficiency and simple design. FLS3217 and FLS3247 provide protection features such as open-LED, short-LED, and over-temperature protection. The current-limit level is automatically reduced to minimize the out put current and protect external components in short-LED condition.

Ordering Information

Temperature Range Package Packing Method FLS3217M -40°C to +125°C 7-Lead, Small Outline Package (SOIC) Tape & Reel FLS3217N 7-Lead, Small Outline Package (DIP) Tube FLS3247N

Figure 3. Top Mark Figure 4. Pin Configuration the output-current regulation in Constant-Current (CC) regulation. 2 VDD Power Supply. IC operating current and MOSFET driving current are supplied using this pin.

3 GND Ground

auxiliary winding of the transformer via resistors of the divider. COMI and GND pins for compensation current loop gain.

6 NC No Connect

7 DRAIN Power MOSFET Drain. This pin is the high-voltage power MOSFET drain.

© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com FLS3217 / FLS3247 • Rev. 1.0.0 4 FLS3217 / FLS3247 — Single-Stage PFC Primary-Side-Regulation Offline LED Driver with Integrated Power MOSFET Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressi ng the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Min. Max. Unit VVDD DC Supply Voltage (1,2) 30 V VVS VS Pin Input Voltage -0.3 7.0 V VCS CS Pin Input Voltage -0.3 7.0 V VCOMI COMI Pin Input Voltage -0.3 7.0 V ID Continuous Drain Current TA=25°C, FLS3217M/N 1 A TA=25°C, FLS3247N 4 IDM Pulsed Drain Current FLS3217M/N 4 A FLS3247N 16 IAR Avalanche Current FLS3217M/N - 1 A FLS3247N 4 PD Power Dissipation SOIC, TA<50°C 660 mW DIP, TA<50°C 1 W JA Thermal Resistance (Junction-to-Air) SOIC, TA<50°C 150 °C/W DIP, TA<50°C 95 JC Thermal Resistance (Junction-to-Case) SOIC, TA<50°C 40 °C/W DIP, TA<50°C 25 TJ Maximum Junction Temperature +150 °C TSTG Storage Temperature Range -55 +150 °C TL Lead Temperature (Soldering 10 seconds) +260 °C ESD ESD Capability, Human Body Model 5 V ESD Capability, Charged Device Model 2 Notes: 1. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. 2. All voltage values, except differential volt ages, are given with respect to GND pin. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensur e optimal performance to the datasheet specificati ons. Fairchild does not recommend exceeding them or designing to Absolute Maximum Ratings. Symbol Parameter Min. Max. Unit TA Operating Ambient Te mperature -40 125 °C

© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com FLS3217 / FLS3247 • Rev. 1.0.0 5 FLS3217 / FLS3247 — Single-Stage PFC Primary-Side-Regulation Offline LED Driver with Integrated Power MOSFET

Electrical Characteristics

Unless otherwise specified, VDD=15V and TA=25°C. Symbol Parameter Condition Min. Typ. Max. Unit MOSFET Section BVDSS Drain-Source Breakdown Voltage I D=250µA, VGS=0V 700 V RDS(ON) Static Drain-Source On Resistance FLS3217M ID=0.5A, VGS=10V 13 16 Ω FLS3217N 8.8 11.0 Ω FLS3247N I D=1A, VGS=10V 2.4 2.8 Ω CISS Input Capacitance FLS3217M VGS=0V, VDS=25V, fS=1MHz 175 200 pF FLS3217N 250 pF FLS3247N 435 pF COSS Output Capacitance FLS3217M VGS=0V, VDS=25V, fS=1MHz 23 25 pF FLS3217N 25 pF FLS3247N 51 pF VDD Section VDD-ON Turn-On Threshold Voltage 14.5 16.0 17.5 V VDD-OFF Turn-Off Threshold Voltag e 6.75 7.75 8.75 V IDD-OP Operating Current VS=2.4V, CL=MOSFET CISS 2.85 4.00 5.00 mA IDD-ST Startup Current V DD=VDD-ON – 0.16V 2 20 μA VOVP V DD Over-Voltage Protection Level 22.0 23.5 25.0 V Oscillator Section fMAX-CC Maximum Frequency in CC V DD=10V, 20V 60 65 70 kHz fMIN-CC Minimum Frequency in CC V DD=10V, 20V 21.0 23.5 26.0 kHz VSMAX-CC VS for Maximum Frequency in CC Frequency=Maximum Frequency-2kHz 2.25 2.35 2.45 V VSMIN-CC VS for Minimum Frequency in CC Frequency=Minimum Frequency +1kHz 0.55 0.85 1.15 V tON(MAX) Maximum Turn-on Time 12 14 16 s Current-Sense Section VRV Reference Voltage 2.475 2.500 2.525 V VCCR Variation Test Voltage on CS Pin for Constant Current Regulation VCS=0.24V 2.38 2.43 2.48 V tLEB Leading-Edge Blanking Time 300 ns tMIN Minimum On Time in CC V VS=-0.5V, VCS=1.5V 600 ns tPD Propagation Delay to GATE Output 50 100 150 ns DSAW Duty Cycle of SAW Limiter 40 % tDIS-BNK t DIS Blanking Time of VS 1.5 s IVS-BNK VS Current for VS Blanking 100 A Continued on the following page…

© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com FLS3217 / FLS3247 • Rev. 1.0.0 6 FLS3217 / FLS3247 — Single-Stage PFC Primary-Side-Regulation Offline LED Driver with Integrated Power MOSFET Electrical Characteristics (Continued) Unless otherwise specified, VDD=15V and TA=25°C. Symbol Parameter Condition Min. Typ. Max. Unit Current-Error-Amplifier Section Gm Transconductance 85 mho ICOMI-SINK COMI Sink Current VEAI=3V, VCOMI=5V 25 38 A ICOMI-SOURCE COMI Source Current VEAI=2V, VCOMI=0V 25 38 A VCOMI-HGH COMI High Voltage VEAI=2V 4.7 V VCOMI-LOW COMI Low Voltage V EAI=3V 0.1 V  Over-Current Protection Section VOCP V CS Threshold Voltage for OCP 0.60 0.67 0.74 V VLowOCP V CS Threshold Voltage for Low OCP 0.13 0.18 0.23 V VLowOCP-EN VS Threshold Voltage to Enable LOW OCP Level 0.40 V VLowOCP-DIS VS Threshold Voltage to Disable LOW OCP Level 0.60 V Over-Temperature-Protection Section TOTP Threshold Temperature for OTP (3) 140 150 160 oC TOTP-HYS Restart Junction Temperature Hysteresis 10 oC Note: 3. When the over-temper ature protection (OTP) is activated, the power system enters Auto-Recovery Mode and output is disabled.

Figure 22. Waveforms at Open-LED Condition adequate to supply VDD during startup. PWM controller shuts down immediately.

TO JEDEC MS-012 VARIATION AA. B) ALL DIMENSIONS ARE IN MILLIMETERS.

1.75 MAX

0.25 CBA

Figure 23. 7-Lead, SOIC, Depopulated JEDEC MS-112, .150" Narrow Body, Dual-DAP, warranty therein, which covers Fairchild products.

B) ALL DIMENSIONS ARE IN MILLIMETERS. MOLD FLASH, AND TIE BAR EXTRUSIONS.

5.08 MAX

Figure 24. 7-Lead, Molded Dual In-Line Package, MDIP, .300" Wide, Dual DAP warranty therein, which covers Fairchild products.

© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com FLS3217 / FLS3247 • Rev. 1.0.0 14 FLS3217 / FLS3247 — Single-Stage PFC Primary-Side-Regulation Offline LED Driver with Integrated Power MOSFET