FLL600IQ-2 FUJITSU | Alldatasheet

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Gate-Source Breakdown Voltage Output Power at 1 dB G.C.P. Power Gain at 1 dB G.C.P. Power-Added Efficiency Thermal Resistance Symbol IDSS VGSO -1 2 - -2 4 3 2 -1.0 -2.0 -3.5 -5 - - 47.0 48.0 - 9.5 10.5 - - 43 - - 0.8 1.2 VDS = 5V, VGS = 0V VDS = 5V, IDS = 14.4A VDS = 5V, IDS = 1.44A IGS = -1.44mA Channel to Case VDS = 12V f=1.96GHz I DS = 4.0A A S V dB dBm V °C/W gm Vp P1dB G1dB ηadd Drain Current - 11.0 15.0 AIDSR Rth Conditions Unit Limits Typ. Max.Min. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) G.C.P.: Gain Compression PointCASE STYLE: IQ Parameter Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol V DS Tc = 25°C V V W VGS PT Tstg Tch Condition 125 -65 to +175 +175 Rating Unit ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 12 volts. 2. The forward and reverse gate currents should not exceed 78 and -32 mA respectively with gate resistance of 25Ω. 3. The operating channel temperature (Tch) should not exceed 145°C.

FEATURES

  • Push-Pull Configuration
  • High Power Output: 60W (Typ.)
  • High PAE: 43% (Typ.)
  • Broad Frequency Range: 800 to 2000 MHz.
  • Suitable for class AB operation.

APPLICATIONS

  • Solid State Power Amplifier.
  • PCS/PCN Communication Systems. Edition 1.7 December 1999 FLL600IQ-2

DESCRIPTION

The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. This new product is uniquely suited for use in PCS/PCN base station amplifiers as it offers high gain, long term reliability and ease of use.

VDS = 12V IDS = 4.0A f = 1.96GHz VDS = 12V IDS = 4.0A f = 1.96GHz 19 21 23 25 27 29 31 33 37 35 39 Input Power (dBm) Output Power (dBm) Pout OUTPUT POWER & ηadd vs. INPUT POWER Frequency (GHz) Output Power (dBm) ηadd (%)ηadd Pin=38dBm 30dBm 35dBm 25dBm OUTPUT POWER vs. FREQUENCY POWER DERATING CURVE 100 120 140 0 50 100 150 200 Case Temperature (°C) Total Power Dissipation (W) FLL600IQ-2

-60 -56 -52 -48 -44 -40 -36 -32 -28 302826 32 34 36 38 40 42 44 Total Output Power (dBm) VDS = 12V IDS = 4.0A f = 1.96GHz ∆f = 5.0MHz 2-tone test IMD (dBc) OUTPUT POWER vs. IMD IM5 IM3 S-PARAMETERS VDS = 12V, IDS = 2A FREQUENCY S11 S21 S12 S22 (MHZ) MAG ANG MAG ANG MAG ANG MAG ANG Note: This S-Parameter data shows measurements performed on a single-ended push-pull FET. These parameters should be used to determine the calculated Push-Pull S-Parameter amplifier designs.

For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1997 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0597M200 Case Style "IQ" Metal-Ceramic Hermetic Package Unit: mm (inches) 8.0 (0.315) 1.9 (0.075) 2.5 MIN. (0.098) 2.5 MIN. (0.098) 17.4 (0.685) 4-R1.3 (0.051) 16.4 (0.646) ±0.2 ±0.15 6.0 (0.236) ±0.2 20.4 (0.803) ±0.2 24.0 (0.945) ±0.2 ±0.2 ±0.2 ±0.13 2.4 (0.094) 5.5 Max. (0.217) 0.1 (0.004) 2.0 (0.079) 1, 2: Gate 3: Source 4, 5: Drain Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: CAUTION

  • Do not put these products into the mouth.
  • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
  • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.