FLL351ME FUJITSU | Alldatasheet
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Technical content
L-Band Medium & High Power GaAs FETs J
FEATURES
+ High Output Power: Pj qp=35.5dBm (Typ.) + High Gain: Gj gp=11.5aB (Typ.) + High PAE: naqq=46% (Typ.) Se. + Proven Reliability = oc oe + Hermetically Sealed Package wee oS. =
DESCRIPTION
The FLL351ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. This device is assembled in hermetic metal/ceramic package. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) item Symbol | condition | Rating Unit Gate-Source Votiage [wes | | Cd Storage Temperature | tg | | -65 to +175 °C Channel Temperature Pot [ote Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (Vpg) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 4.0 and -2.0 mA respectively with gate resistance of 1002. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) item Symbol Test Conditions Unit Saturated Drain Current inss_| Vos=5v.vas=ov | - | 1200 mA Transconductance | 9m | Vos=5v.Ips=800ma | - | 600] - | ms Pinch-off Voltage Vps = 5V, Ipg =60mA Vv Gate Source Breakdown Voltage las = -60pA fs] -|-| Vv oar ess | Vps = 10V f = 2.3GHz Power-added Efficiency 1 - fel | % Temtteisine | A [cumewes | [vs | | ow CASE STYLE: ME G.C.P.: Gain Compression Point Data Sheets 172 1998 Microwave Databook
oo) FLL351IME F UJITSU L-Band Medium & High Power GaAs FETs POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE aa SENG eee Fa = 800 See ee oe oO PLT TX | WEEE ee at 0 50 100 150 200 o 2 4 6 8 10 Case Temperature (°C) Drain-Source Voltage (V) OUTPUT POWER vs. INPUT POWER Eaeeee _ 8 f= 2.3 GHz = euytt tt ry i, See 2ree 0 sof | Yl te | | d & a 30 Z 30 8 2° VCRCCCE 3 a ed LT | | | tt 16 18 20 22 24 26 Input Power (dBm)
L-Band Medium & High Power GaAs FETs FU ) ITSU +450 oO S14 +90° —O— S21 TO Soo Om Sip +/25 \\ LE 5D LOIS J +250 \\ sito gee 4° " [/: 7 og [iy st an offs fe te =ee- 80° aN, im Le os8ne| —— OY SCALE FOR Sox] <7 NC] LAY Lal \\O jo \\ (250 Bros Fs 2 _ 004 ‘es 100 8 a -j0 -90° S-PARAMETERS Vps = 10V, Ipg = 720mA FREQUENCY S11 $21 $12 $22 (MHZ) MAG ANG MAG ANG MAG ANG MAG ANG 100 964 -728 17.142 139.4 019 53.9 326 -151.5 2000 901 168.3 1.652 428 040 25.3 554 170.7 3000 895 155.1 1.156 17.6 054 276 602 161.2 4000 879 141.8 920 57 071 213 621 149.5 4500 869 134.6 867 15.5 079 15.3 615 147.4 5000 850 126.6 858 27.2 088 12.3 659 143.9 Data Sheets 174 1998 Microwave Databook
J L-Band Medium & High Power GaAs FETs Case Style "ME" Metal-Ceramic Hermetic Package | 2. 3|§ 2:02.240.15 a (0.087) 1) 1 7 2 i 0.130.05 T.00ay 16.020.15 a 7 | 12,020.15 ~ ws ‘ 0.472) > 1: Gate IS 2: Source (Flange) 3: Drain Unit: mm (Inches)