FLL2400IU-2C FUJITSU | Alldatasheet

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Technical content

Edition 1.0 Preliminary November 2000 FLL2400IU-2C L-Band High Power GaAs FET

DESCRIPTION

The FLL2400IU-2C is a 240 Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. This new product is well suited for use in W-CDMA and IMT 2000 base station amplifiers as it offers high gain, long term reliability and ease of use.

FEATURES

  • Push-Pull Configuration
  • High Power Output: 240W (Typ.)
  • Broad Frequency Range: 2100 to 2200 MHz.
  • Suitable for class AB operation.

APPLICATIONS

  • Solid State Base-Station Power Amplifier.
  • W-CDMA and IMT 2000 Communication Systems. Item Symbol VDS = 12V f = 2.17 GHz IDS = 6.0A Pin = 45.0dBm Note 1 Drain Current IDSS -3 2-VDS = 5V, VGS = 0V A Pinch-Off Voltage -0.1 -0.3 -0.5VDS = 5V, IDS = 680mA VVp -5Gate-Source Breakdown Voltage VGSO --IGS = -6.8mA V Output Power 52.8 53.8 - dBmPout Linear Gain 10.5 11.5 - dBGL Thermal Resistance - 0.45 0.65Channel to Case °C/WRth Conditions Unit Limits Typ. Max.Min. ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C) CASE STYLE: IU Note 1: The RF test are performed using a P.W. = 1msec., Duty Cycle = 20% Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol V DS Tc = 25°C V V W VGS PT Tstg Tch Condition 230 -65 to +175 +175 Rating Unit ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 12 volts. 2. The forward and reverse gate currents should not exceed 367 and -161 mA respectively with gate resistance of 1.5Ω. 3. The operating channel temperature (Tch) and case temperature (Tc) should not exceed 145°C and 80°C respectively.

L-Band High Power GaAs FET -44 OUTPUT POWER vs. ACPR 30 32 34 36 38 40 42 44 46 48 -48 -52 -56 -56 0 -40 -36 -32 -28 -24 Output Power (dBm) ACPR & IMD (dBc) ηadd (%) & IDS(RF) (A) VDS = 12V IDS = 6.0A f0 = 2.14GHz f1 = 2.15GHz W-CDMA, 2-Tone Signal Chip Rate: 3.84Mcps IMD ACPR@5MHz ηadd IDS(RF) POWER GAIN vs. FREQUENCY 2.0 2.1 2.2 2.3 Frequency (GHz) Power Gain (dB) VDS = 12V IDS = 6.0A Po = 47dBm OUTPUT POWER vs. INPUT POWER VDS =12V IDS = 6.0A f = 2.14GHz 3028 48 32 3634 38 40 42 44 46 Input Power (dBm) 46Output Power (dBm) Pout

L-Band High Power GaAs FET S-PARAMETERS VDS = 12V, IDS = 3000mA FREQUENCY S11 S21 S12 S22 (MHZ) MAG ANG MAG ANG MAG ANG MAG ANG Note: This S-Parameter data shows measurements performed on a single-ended push-pull FET. These parameters should be used to determine the calculated Push-Pull S-Parameter amplifier designs.

For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI1100M200 Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: CAUTION

  • Do not put these products into the mouth.
  • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
  • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FLL2400IU-2C L-Band High Power GaAs FET Case Style "IU" 8.0±0.15 (0.315) 15.5±0.15 (0.610) (0.685) 0.7±0.2 4-R1.3 12-R0.5 10.0±0.2 (0.393) 23.9±0.25 (0.941) 34.0±0.25 (1.339) 30.4±0.25 (1.181) 2.4±0.15 (0.094) 1.9±0.15 (0.075) 4.5 Max. (0.177) 0.1 (0.004) 2.0 (0.078) Unit: mm (inches) 1, 2: Gate 3: Source 4, 5: Drain 6: Source