FLL177 FUJITSU | Alldatasheet
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————«d&L-Barnd Medium & High Power GaAs FET
FEATURES
+ High Output Power: P4qgp=32.5dBm (Typ.) + High Gain: G1 qp=12.5dB (Typ.) + High PAE: nagq=46% (Typ.) Se + Proven Reliability = Be 2p. + Hermetically Sealed Package Se. DESCRIPTION ‘ R&S The FLL177ME is a Power GaAs FET that is specifically designed to as provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. This device is assembled in hermetic metal/ceramic package. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Total Power Dissipation ; pm | Te = 25°C WwW Channel Temperature | tn fot Te Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (Vpg) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 9.6 and -1.0 mA respectively with gate resistance of 2009. 3. The operating channel temperature (Toh) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C, Saturated Drain Current Vps = 5V, Vas = 0V | - [600 | 900 | mA Transconductance | 9m | Vps=5v.Ips=400ma | - | 300| - | ms Pinch-off Voltage Vps = 5V, Ips = 30mA v Gate Source Breakdown Voltage | Vaso | Igg = -30uA fs] -[- |] v Output Power at 1dB G.C.P. favs] eos] - | dBm Vps = 10V IDs ~ 0.6IDSs (Typ.). Pi in at 1dB G.C.P. yp); 1: . Power-added Efficiency - «| | % Thermal Resistance Channel to Case | - | 15 | 20 | “CW CASE STYLE: ME G.C.P.: Gain Compression Point = FUJITSU July 1999 1
L-Band Medium & High Power GaAs FET POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE CEE) ELT PACE) eycckr. INCE] b= PEARS MIRE S 2 P| AL é 200 pep ; Ys Zane Jf tt 0 50 100 150 200 0 2 4 6 8 10 Case Temperature (°C) Drain-Source Voltage (V) OUTPUT POWER vs. INPUT POWER Eee — gee TTT es © ot | rl | eT PTT YT FLT é a 97 4 30 2 g 7) bel | |e a On le LT | | tt | 12 14 16 18 20 22 Input Power (dBm) FUjiTsu
a L-Barnd Medium & High Power GaAs FET =o Sy so- Sp TSO LOSES
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oO t 10 —— 2 — 509! 190: sf 180° SCALE FOR feu 3 SO o Be 36-4 we IDAL | 55 ) a 10 y -j250 =~ 04 I» \\>) yo oa S 3 -jes “100 3- —_ j50 =30° S-PARAMETERS Vps = 10V, Ipg = 360mA FREQUENCY si $21 si2 $22 (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 1500 857 165.4 3.853 95.3 027 425 337 -130.2 4500 724 141.8 1.868 745 048 918 599 -158.9 3 J
L-Band Medium & High Power GaAs FET Case Style "ME" Metal-Ceramic Hermetic Package 2.02.240.15 (0.088) i IMIDE: re | a0 (0.00 16.020.15 als 1.65202 (0.630) sp (0.065) [sia | 1. Gate ! ! 2. Source (Flange) 0.354) 3. Drain aff Unit: mm(inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. CAUTION San Jose, CA 95131-1138, U.S.A. Fujitsu Compound Semiconductor Products contain gallium arsenide FAX: (408) 428-9111 www.fcsi.fujitsu.com + Do not put these products into the mouth. + Do not alter the form of this product into a gas, powder, or liquid FUJITSU MICROELECTRONICS, LTD. thug burg, ring, hele prosiaig a thar by rot Compound Semiconductor Division pee it tawa ana ; lato ine tacoraing mie Network House product. This product must be discarded in accordance with methods Norreys Drive specified by applicable hazardous waste procedures. Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 J 4