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Technical content
Features
N channel 40V MOSFET for automotive application TO220F: wide pin package (for high current)
Applications
Automotive: EPS motor driver application Automotive: Other motor driver and solenoid driver application I n t e r n a l E q u i v a l e n t C i r c u i t P a c k a g e FM20 (TO220 Full Mold) K e y S p e c i f i c a t i o n s A b s o l u t e m a x i m u m r a t i n g s (Ta=25°C） Characteristic Symbol Rating Unit Drain to Source V oltage VDSS 40 V Gate to Source V oltage VGSS ±20 V Continuous Drain Current ID ±70 A Pulsed Drain Current ID(pulse) ※１ ±140 A Maximum Power Dissipation PD 35 （Tc=25℃） W Single Pulse Avalanche Energy EAS ※2 400 mJ Avalanche Current IAS 25 A Maximum Drain to Source dv/dt 1 dv/dt 1※2 0.3 V/ns Peak diode recovery dv/dt 2 dv/dt 2※3 1.0 V/ns Peak diode recovery di/dt di/dt※3 100 A/μs Channel Temperature Tch 150 ℃ Storage Temperature Tstg -55～150 ℃ ※1 PW≦100μsec. duty cycle≦1％ ※2 VDD=20V, L=1mH, IL=20A, unclamped, Rg＝50Ω，See Fig.1 ※3 ISD=25A，See Fig.2 Ｇ(1) Ｓ(3) Ｄ(2)
http://www.sanken-ele.co.jp SANKEN ELECTRIC ＦＬＤ４７０ Nov. 2010 The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 2 E l e c t r i c a l c h a r a c t e r i s t i c s (Ta=25°C） Limits Characteristic Symbol Test Conditions MIN TYP MAX Unit Drain to Source breakdown V oltage V(BR)DSS ID=100μA,VGS=0V 40 V Gate to Source Leakage Current IGSS VGS=±15V ±2 μA Drain to Source Leakage Current IDSS VDS=40V , VGS=0V 100 μA Gate Threshold V oltage VTH VDS=10V , ID=1mA 2.0 3.0 4.0 V Forward Transconductance Re(yfs) VDS=10V , ID=35A 30 50 S Static Drain to Source On-Resistance RDS(ON) ID=35A, VGS=10V 5.0 6.0 mΩ Input Capacitance Ciss 5100 Output Capacitance Coss 1200 Reverse Transfer Capacitance Crss VDS=10V VGS=0V f=1MHz 860 pF Turn-On Delay Time td(on) 100 Rise Time tr 100 Turn-Off Delay Time td(off) 300 Fall Time tf ID=35A, VDD≒20V RG=22Ω,RGS=50Ω RL=0.57Ω, VGS=10V See Fig.3 130 ns Source-Drain Diode Forward V oltage VSD ISD=50A,VGS=0V 0.9 1.2 V Source-Drain Diode Reverse Recovery Time trr ISD=25A ｄi/dt=50A/us 100 ns Thermal Resistance Junction to Case Rth(ch-c) 3.57 ℃/W Thermal Resistance Junction to Ambient Rth(ch-a) 62.5 ℃/W
http://www.sanken-ele.co.jp SANKEN ELECTRIC ＦＬＤ４７０ Nov. 2010 The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 3 Characteristic Curves (Tc=25℃)
http://www.sanken-ele.co.jp SANKEN ELECTRIC ＦＬＤ４７０ Nov. 2010 The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 4 Characteristic Curves (Tc=25℃)
http://www.sanken-ele.co.jp SANKEN ELECTRIC ＦＬＤ４７０ Nov. 2010 The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 5 Characteristic Curves (Tc=25℃)
http://www.sanken-ele.co.jp SANKEN ELECTRIC ＦＬＤ４７０ Nov. 2010 The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 6 Characteristic Curves (Tc=25℃)
http://www.sanken-ele.co.jp SANKEN ELECTRIC ＦＬＤ４７０ Nov. 2010 e and reliable. However, SANKEN ELECTRIC CO., LTD assumes no The information included herein is believed to be accurat responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 7 Fig.1 Unclamped Inductive Test Method EAS= 1 ･L･ILP2・ DD(BR)DSS (BR)DSS VV V ( ａ ) Test Circuit ( b ) Waveforms Fig.2 Diode Reverse Recovery Time Test Method (b) Waveforms (ａ) Test Circuit Fig.3 Switching Time Test Method 90% ( ａ ) Test Circuit ( b ) Waveforms td(on) tr ton td(off) tf toff 90% 10% VGS VDS 10%
http://www.sanken-ele.co.jp SANKEN ELECTRIC ＦＬＤ４７０ Nov. 2010 The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 8 Outline FM20 (TO220 Full Mold) (1) Gate (3) Source (2) Drain (Back Side) (1) Gate Weight Approx. 2g