FL20KM-5A_15 RENESAS | Alldatasheet
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1 st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry.
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Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 To all our customers
Notice: This is not a final specification. Some parametric limits are subject to change. Aug. 1999 l 10V DRIVE 250 ±30 –55 ~ +150 –55 ~ +150 2000 2.0 V V A A A W V g FL20KM-5A 15 ± 0.3 14 ± 0.5 10 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 2.6 ± 0.2 4.5 ± 0.2 0.75 ± 0.15 3 ± 0.3 3.6 ± 0.3 6.5 ± 0.3 À À À GATE \` DRAIN ´ SOURCE VGS = 0V VDS = 0V L = 200µH AC for 1minute, Terminal to case T ypical value MITSUBISHI POWER MOSFET FL20KM-5A HIGH-SPEED SWITCHING USE Nch POWER MOSFET APPLICATION Inverter type fluorescent light sets, SMPS Parameter ConditionsSymbol Ratings Unit VDSS VGSS ID IDM IDA PD Tch Tstg Viso Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight TO-220FN OUTLINE DRAWING Dimensions in mm MAXIMUM RATINGS (Tc = 25°C)
Notice: This is not a final specification. Some parametric limits are subject to change. Aug. 1999 MITSUBISHI POWER MOSFET FL20KM-5A HIGH-SPEED SWITCHING USE Nch POWER MOSFET ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±30V, VDS = 0V VDS = 250V , VGS = 0V ID = 1mA, VDS = 10V ID = 10A, VGS = 10V ID = 10A, VGS = 10V ID = 10A, VDS = 10V VDS = 25V , VGS = 0V, f = 1MHz VDD = 150V, ID = 10A, VGS = 10V , RGEN = RGS = 50Ω IS = 10A, VGS = 0V Channel to case IS = 20A, VGS = 0V, dis/dt = –100A/µs V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W ns 250 ±30 2.0 3.0 0.15 1.50 1300 250 200 1.5 300 ±10 1.0 4.0 0.19 1.90 2.0 3.57 0 200 50 100 150 0 4 8 12 16 20 PD = 35W VGS = 20V Tc = 25°C Pulse Test 10V 101 2 10135 7 2 10235 7 2 10335 7 2 100 10-1 tw = 10µs Tc = 25°C Single Pulse 100µs 10ms 100ms 1ms DC 02468 1 0 Tc = 25°C Pulse Test PD = 35W POWER DISSIPATION DERATING CURVE CASE TEMPERATURE T C (°C) POWER DISSIPATION P D (W) MAXIMUM SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE V DS (V) DRAIN CURRENT I D (A) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT I D (A) DRAIN-SOURCE VOLTAGE V DS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT I D (A) DRAIN-SOURCE VOLTAGE V DS (V) VGS = 20V 10V Symbol Parameter Test conditions Limits Min. Typ. Max. Unit V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs C iss C oss C rss td (on) tr td (off) tf VSD R th (ch-c) Trr Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time ELECTRICAL CHARACTERISTICS (Tch = 25°C) PERFORMANCE CURVES
Notice: This is not a final specification. Some parametric limits are subject to change. Aug. 1999 MITSUBISHI POWER MOSFET FL20KM-5A HIGH-SPEED SWITCHING USE Nch POWER MOSFET 0 4 8 12 16 20 ID = 40A Tc = 25°C Pulse Test 10A 20A 0.08 0.16 0.24 0.32 0.40 -1 2 10035 7 2 10135 7 23 10257 VGS = 10V Tc = 25°C Pulse Test 20V 0 4 8 12 16 20 Tc = 25°C VDS = 10V Pulse Test 100 10123 5 7 10223 5 7 100 101 102 Tc = 25°C 75°C 125°C VDS = 10V Pulse Test 103 102 101 2 10235 7 21012 35 71002 35 7 Ciss Coss Crss Tch = 25°C f = 1MHZ VGS = 0V 100 10123 5 772 3 55 102 101 td(off) td(on) tr Tch = 25°C VDD = 150V VGS = 10V R GEN = RGS = 50Ω tf ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN-SOURCE ON-STATE VOLTAGE V DS (ON) (V) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT I D (A) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω ) GATE-SOURCE VOLTAGE V GS (V) DRAIN CURRENT I D (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) DRAIN CURRENT I D (A) FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN-SOURCE VOLTAGE V DS (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) DRAIN CURRENT I D (A) CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING TIME (ns)
Notice: This is not a final specification. Some parametric limits are subject to change. Aug. 1999 MITSUBISHI POWER MOSFET FL20KM-5A HIGH-SPEED SWITCHING USE Nch POWER MOSFET 125°C 75°C 25°C VGS = 0V Pulse Test 0 20 40 60 80 100 VDS = TC = 200V 100V 50V Tch = 25°C ID = 20A 10–1 100 101 –50 0 50 100 150 VGS = 10V ID = 10A Pulse Test 1.0 2.0 3.0 4.0 5.0 –50 0 50 100 150 VDS = 10V ID = 1mA 0.4 0.6 0.8 1.0 1.2 1.4 –50 0 50 100 150 VGS = 0V ID = 1mA 10–2 10–1 100 101 10–423 57 23 57 23 57 23 57 100 23 57 101 23 57 10210–3 10–2 10–1 Single Pulse PDM tw D = T tw T 0.5 0.01 0.2 Duty = 1.0 0.1 0.05 0.02 GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE CHARGE Q g (nC) GATE-SOURCE VOLTAGE V GS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) SOURCE-DRAIN VOLTAGE V SD (V) SOURCE CURRENT I S (A) CHANNEL TEMPERATURE Tch ( °C) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (t°C) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (25°C) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) CHANNEL TEMPERATURE Tch ( °C) GATE-SOURCE THRESHOLD VOLTAGE V GS (th) (V) CHANNEL TEMPERATURE Tch ( °C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS PULSE WIDTH tw (s) TRANSIENT THERMAL IMPEDANCE Z th (ch-c) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)