FL16KM-6A RENESAS | Alldatasheet
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Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 To all our customers
Mar. 2002 FL16KM-6A OUTLINE DRAWING Dimensions in mm TO-220FN MITSUBISHI Nch POWER MOSFET FL16KM-6A HIGH-SPEED SWITCHING USE APPLICATION SMPS, Inverter fluorescent light sets, etc. 300 ±30 –55 ~ +150 –55 ~ +150 2000 2.0 V GS = 0V VDS = 0V L = 200µH AC for 1minute, Terminal to case Typical value Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight V V A A A W V g VDSS VGSS ID IDM IDA PD Tch Tstg Viso Symbol MAXIMUM RATINGS (T c = 25°C) Parameter Conditions Ratings Unit G 10V DRIVE ➀ GATE ➁ DRAIN ➂ SOURCE 15 ± 0.3 14 ± 0.5 10 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 2.6 ± 0.2 4.5 ± 0.2 0.75 ± 0.15 3 ± 0.3 3.6 ± 0.3 6.5 ± 0.3 ➀➁➂
Mar. 2002 MITSUBISHI Nch POWER MOSFET FL16KM-6A HIGH-SPEED SWITCHING USE PERFORMANCE CURVES V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs C iss C oss C rss td (on) tr td (off) tf VSD R th (ch-c) V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W 300 ±30 2.0 3.0 0.29 2.32 950 175 150 1.5 ±10 4.0 0.35 2.80 2.0 3.57 ELECTRICAL CHARACTERISTICS (T ch = 25°C) Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Symbol UnitParameter Test conditions Limits Min. Typ. Max. I D = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 300V, VGS = 0V ID = 1mA, VDS = 10V ID = 8A, VGS = 10V ID = 8A, VGS = 10V ID = 8A, VDS = 10V VDS = 25V, VGS = 0V , f = 1MHz VDD = 150V, ID = 8A, VGS = 10V, RGEN = RGS = 50Ω IS = 8A, VGS = 0V Channel to case 0 200 50 100 150 10–1 100 101 10133 57 2 10235 7 2 10335 7 102 100µs tw = 10µs 1ms 10ms DC TC = 25°C Single Pulse 0 1 02 03 04 05 0 VGS = 20V PD = 35W TC = 25°C Pulse Test 10V 0 4 8 1 21 62 0 VGS = 20V TC = 25°C Pulse Test 10V 4.5V 5.5V POWER DISSIPATION DERATING CURVE CASE TEMPERATURE T C (°C) POWER DISSIPATION P D (W) MAXIMUM SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE V DS (V) DRAIN CURRENT ID (A) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V)
Mar. 2002 MITSUBISHI Nch POWER MOSFET FL16KM-6A HIGH-SPEED SWITCHING USE 101 102 103 104 10035 7 2 10135 7 2 10232 357 Ciss Coss Crss TC h = 25°C f = 1MHZ VGS = 0V 100 10210123 4 5 7 23 4 5 7 100 101 TC = 25°C 125°C 75°C VDS = 10V Pulse Test 0 4 8 12 16 20 TC = 25°C VDS = 50V Pulse Test 0 4 8 12 16 20 16A ID = 30A TC = 25°C Pulse Test 0.1 0.2 0.3 0.4 0.5 –1 2 10035 7 2 10135 7 2 10235 7 TC = 25°C Pulse Test VGS = 10V 20V 100 10210123 4 5 7 23 4 5 7 101 102 TC h = 25°C VDD = 150V VGS = 10V R GEN = RGS = 50Ω td(off) td(on) tf tr ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω ) TRANSFER CHARACTERISTICS (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) SWITCHING CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE V DS (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) DRAIN CURRENT ID (A) CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING TIME (ns)
Mar. 2002 MITSUBISHI Nch POWER MOSFET FL16KM-6A HIGH-SPEED SWITCHING USE 0.4 0.6 0.8 1.0 1.2 1.4 –50 0 50 100 150 VGS = 0V ID = 1mA 1.0 2.0 3.0 4.0 5.0 –50 0 50 100 150 VDS = 10V ID = 1mA TC = 125°C 75°C 25°C VGS = 0V Pulse Test 10–1 100 101 –50 0 50 100 150 VGS = 10V ID = 8A Pulse Test SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) SOURCE-DRAIN VOLTAGE V SD (V) SOURCE CURRENT I S (A) CHANNEL TEMPERATURE Tch ( °C) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (t°C) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) CHANNEL TEMPERATURE Tch ( °C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (25°C) CHANNEL TEMPERATURE Tch ( °C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS PULSE WIDTH tw (s) TRANSIENT THERMAL IMPEDANCE Z th (ch–c) (°C/W) 10–2 10–1 100 101 10–423 57 23 57 23 57 23 57 100 23 57 101 23 57 10210–3 10–2 10–1 D = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse PDM tw D = T tw T 0 1 02 03 04 05 0 VDS = 50V 200V 100V TC h = 25°C ID = 16A GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) GATE CHARGE Q g (nC) GATE-SOURCE VOLTAGE V GS (V)