FL014N

FL014N VBSEMI | Alldatasheet

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Technical content

N-Channel 0-V (D-S) MOSFET

FEATURES

• Halogen-free  TrenchFET® Power MOSFET

APPLICATIONS

 Load Switches for Portable Devices Notes: a. Package limited, TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under S teady State conditions is 95 °C/W. e. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework Conditions: manual soldering with a sol dering iron is not recommended for leadless components. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 0.076 at VGS = 10 V 1 nC 0.08 at VGS = V ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise no ted Parameter Symbol Limit Unit Drain-Source Voltage VDS 0 VGate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID A TC = 70 °C a TA = 25 °C .7 TA = 70 °C Pulsed Drain Current IDM 20 Continuous Source-Drain Diode Current TC = 25 °C IS TA = 25 °C .1b, c Maximum Power Dissipation TC = 25 °C PD 4.0 WTC = 70 °C 3.0 TA = 25 °C 2.5b, c TA = 70 °C 1.6b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)e, f 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c, d t ≤ 5 s R thJA 40 50 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 15 20 RoHS COMPLIANT N-Channel MOSFET G D S SOT-223-3 G D S D 4.5 4.5 .55 3.2 2.3 4.5 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw FL014N A ll data sheet.com

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolut e Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise no ted Parameter Symbol Test C onditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 0 V VDS Temperature Coefficient ΔVDS /TJ ID = 250 µA 25 mV/°CVGS(th) Temperature Coefficient ΔVGS(th)/TJ - 4.0 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 1.0 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 0 V, V GS = 0 V 1 µAVDS = 60 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 4.5 V 30 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V , ID = 4.0 A 0.07 ΩVGS = V, ID = 3.0 A 0.08 Forward Transconductancea gfs VDS = 10 V, ID = 4.0 A 45 S Dynamicb Input Capacitance Ciss VDS = 30V V GS = 0 V, f = 1 MHz 810 pFOutput Capacitance Coss 120 Reverse Transfer Capacitance Crss 100 Total Gate Charge Qg VDS = 30 V, VGS = 10 V, ID = 4.0 A 22 33 nCVDS = 30 V , VGS = 4.5 V, ID = 3.0 A 10 15 Gate-Source Charge Qgs 2.5 Gate-Drain Charge Qgd 1.7 Gate Resistance Rg f = 1 MHz 2.4 Ω Turn-on Delay Time td(on) VDD =30V, , RL = 1.5 Ω ID ≅ 4.0 A, VGEN = 4.5 V, Rg = 1 Ω 15 25 ns Rise Time tr 10 15 Turn-Off Delay Time td(off) 35 55 Fall Time tf 12 20 Turn-on Delay Time td(on) VDD = 30V , RL = 1.5 Ω ID ≅ 4.0 A, VGEN = 10 V, Rg = 1 Ω 10 15 Rise Time tr 12 20 Turn-Off Delay Time td(off) 25 40 Fall Time tf 10 15 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 7.2 A Pulse Diode Forward Current ISM 30 Body Diode Voltage VSD IS = 4.0 A, VGS = 0 V 0.8 1.2 V Body Diode Reverse Recovery Ti me trr IF = 4.0 A, dI/dt = 100 A/µs, TJ = 25 °C 20 40 ns Body Diode Reverse Recovery Charge Qrr 10 20 nC Reverse Recovery Fa ll Time ta 10 ns Reverse Recovery Rise Time tb 10 4.5 5 5 2. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw FL014N A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D VGS =10thru 5 V VGS = 3.5 V VGS = 4V VGS =2.5 V 0.00 0.00 0.009 0.01 0.0 0.01 0.01 0 6 12 18 24 30 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) VGS =10 V VGS =4.5 V 0.01 0 5 10 15 20 25 ID = 6.3 A - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS VDS = 16 V VDS = 10 V Transfer Characteristics Capacitance On-Resistance vs. Jun ction Temperature VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D TC = 25 °C TC = 125 °C TC = - 55 °C Crss 200 400 600 800 1000 0 15 30 45 60 Ciss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF)Coss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) (Normalized) - On-ResistanceRDS(on) VGS = 4.5 V, 10 VID = 6.3 A E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw FL014N A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage TJ = 150 °C VSD - Source-to-Drain Voltage (V) - Source Current (A)IS 100 TJ = 25 °C 0.4 0.6 0.8 1.0 1.2 1.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA (V)VGS(th) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.000 0.010 0.020 0.030 0.040 0.050 012345 - On-Resistance (Ω)RDS(on) VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID = 4.0 A ) W ( r e w o P Time (s) 1 600 0.1 0.01 0.001 10 100 Single Pulse Power, Junction-to-Cas e 100 0.1 1 10 100 0.01 0.1 TC = 25 °C Single Pulse Limited byR DS(on)* BVDSS Limited 1m s 100 µs 10 ms 100 ms, DC 10 µs VDS - Drain-to-Source Voltage (V * VGS > minimum VGS at which RDS(on) is specified - Drain Current (A)ID E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw FL014N A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise note d * The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resi stance, and is more us eful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 2 55 07 5 1 0 0 1 2 5 1 5 0 TC - Case Temperature (°C) ID - Drain Current (A) Package Limited Power Derating 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw FL014N A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Junc tion-to-Ambient 10 -3 10 -2 1 10 600 10 -110 -4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) i t c e f f 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 80 °C/W 3. T JM - TA = PDMZthJA(t) t 1 t 2 t 1 t 2 Notes: 4. Surface Mounted P DM Normalized Thermal Transient Impedance, Junctio n-to-Foot 10 -3 10 -2 10 10 -110 -4 0.1 0.01 0.2 0.1 0.05 0.02 Duty Cycle = 0.5 Square Wave Pulse Duration (s) v i t c e f f E d e z i l a m r o N t n e i s n a r T e e c n a d e p m I l a m r e h T Single Pulse E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw FL014N A ll data sheet.com

SOT-223 (HIGH VOLTAGE) Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension do not include mold flash. 4. Outline conforms to JEDEC outline TO-261AA. D B 0.10 (0.004) M C M H 0.10 (0.004) M C B M 0.20 (0.008) M C A M 0.10 (0.004) M C B M 3 x B e 1 2 3 A E C A 0.08 (0.003) θ 4 x L 4 x C MILLIMETERS INCHES A 1.55 1.80 0.061 0.071 B 0.65 0.85 0.026 0.033 B1 2.95 3.15 0.116 0.124 C 0.25 0.35 0.010 0.014 D 6.3 0 6.70 0.248 0.264 E 3.30 3.70 0.130 0.146 e 2.30 BSC 0.0905 BSC e1 4.60 BSC 0.181 BSC H 6.71 7.29 0.264 0.287 L 0.91 - 0.036 - L1 0.061 BSC 0.0024 BSC θ - 10' - 10' ECN: S-82109-Rev. A, 15-Sep-08 DWG: 5969 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw FL014N A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw FL014N A ll data sheet.com