FF08MR12W1MA1_B11A INFINEON | Alldatasheet
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CoolSiC™AutomotiveMOSFET FF08MR12W1MA1_B11A QualifiedforAutomotiveApplications.ProductValidationaccordingtoAQG324 FinalDataSheet V3.1,2020-09-15 AutomotiveHighPower
FF08MR12W1MA1_B11A Easy1BModule V3.1,2020-09-15Final Data Sheet 1Features/Description EasyDUALmodulewithCoolSiC™AutomotiveMOSFETandPressFIT/NTC T VDSS = 1200 V ID = 150 A TypicalApplications Description The Automotive CoolSiCTM EasyPACKTM1B is a half bridge module which combines the benefits of Infineon’s robust silicon carbide technology with a very compact and flexible package for hybrid and (fuel cell) electric vehicles. The power module implements the new CoolSiCTM Automotive MOSFET 1200V Gen1, optimized for high voltage applications like DC/DC converter and Auxiliary inverter.The chipset offers benchmark current density, high block voltage and reduced switching losses, which allows compact designs and helps to improve system efficiency, as well as allows a reliable operation under harsh environmental conditions. It is qualified for Automotive Applications and validated according to AQG 324. The Automotive CoolSiCTM EasyPACKTM1B power module family comes with mechanical guiding elements and mounting clamps supporting easy assembly processes for customers. Furthermore, the press-fit pins for the signal terminals avoid additional time consuming selective solder processes, which provides cost savings on system level and increases system reliability. The Automotive CoolSiCTM EasyPACKTM1B allows a flexible cooler and application construction. Due to the high clearance & creepage distances, the module family is also well suited for increased system working voltages and supports modular approaches.
- AutomotiveApplications
- AuxiliaryInverters
- DC/DCconverter
- HybridElectricalVehicles(H)EV ElectricalFeatures
- Newsemiconductormaterial-SiliconCarbide
- Blockingvoltage1200V
- LowRDSon
- LowSwitchingLosses
- LowQgandCrss
- LowInductiveDesign
- Tvjop=150°C MechanicalFeatures
- 5.1kVDC1secInsulation
- Compactdesign
- HighPowerDensity
- IntegratedNTCtemperaturesensor
- PressFITContactTechnology
- RoHScompliant ProductName OrderingCode FF08MR12W1MA1_B11A SP002314006
FF08MR12W1MA1_B11A Easy1BModule V3.1,2020-09-15Final Data Sheet 2MOSFET 2.1MaximumRatedValues Parameter Conditions Symbol Value Unit Drain-source voltage VDSS 1200 VTvj = 25°C DC drain current Tvj = 175°C, VGS = 15 V ID nom 150 ATH = 65°C Pulsed drain current verified by design, tp limited by Tvjmax ID pulse 300 A Gate-source voltage VGSS -10/20 V 2.2CharacteristicValues min. typ. max. Drain-source on resistance ID nom = 150 A VGS = 15 V RDS on 7.33 10.6 12.1 9.80 mΩ Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate threshold voltage ID = 90.0 mA, VDS = VGS (tested after 1ms pulse at VGS = +20 V) VGS(th) 3.25 4.40 5.55 VTvj = 25°C Total gate charge VGS = -5/15 V, VDS = 600 V QG 0.495 µC Internal gate resistor RGint 0.6 ΩTvj = 25°C Input capacitance f = 1 MHz, VGS = 0 V VDS = 600 V Ciss 16.0 nFTvj = 25°C Output capacitance f = 1 MHz, VGS = 0 V VDS = 600 V Coss 0.70 nFTvj = 25°C Reverse transfer capacitance f = 1 MHz, VGS = 0 V VDS = 600 V Crss 0.06 nFTvj = 25°C COSS stored energy VDS = 600 V, VGS = -5 / 15 V EOSS 164 µJTvj = 25°C Drain-source leakage current VDSS = 1200 V, VGS = -5 V IDSX 100 µATvj = 25°C Gate-source leakage current VDS = 0 V, Tvj = 25°C IGSS 400 nAVGS = 20 V Turn on delay time, inductive load ID nom = 150 A, RGon = 5.10 Ω VDS = 600 V VGS = -5 / 15 V td on 53.0 48.0 46.0 ns Tvj = 25°C Tvj = 125°C Tvj = 150°C Rise time, inductive load ID nom = 150 A, RGon = 5.10 Ω VDS = 600 V VGS = -5 / 15 V tr 35.0 34.0 33.0 ns Tvj = 25°C Tvj = 125°C Tvj = 150°C Turn off delay time, inductive load ID nom = 150 A, RGoff = 5.10 Ω VDS = 600 V VGS = -5 / 15 V td off 146 148 149 ns Tvj = 25°C Tvj = 125°C Tvj = 150°C Fall time, inductive load ID nom = 150 A, RGoff = 5.10 Ω VDS = 600 V VGS = -5 / 15 V tf 38.0 38.0 39.0 ns Tvj = 25°C Tvj = 125°C Tvj = 150°C Turn-on energy loss per pulse ID nom = 150 A, VGS = -5 / 15 V VDS = 600 V, RGon = 5.10 Ω LS = 20 nH di/dt = 4.92 kA/µs (Tvj op = 150°C) Eon 4.26 5.01 5.29 mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C Turn-off energy loss per pulse ID nom = 150 A, VGS = -5 / 15 V VDS = 600 V, RGoff = 5.10 Ω LS = 20 nH du/dt = 15.5 kV/µs (Tvj op = 150°C) Eoff 2.67 2.73 2.76 mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C SC data VGS = -5 / 15 V, RG = 5.10 Ω VDD = 800 V VDSmax = VDSS -LsDS ·di/dt ISC 2000 2200 A tP ≤ 3 µs, Tvj = 150°C tP ≤ 3 µs, Tvj = 25°C Thermal resistance, junction to heatsink per MOSFET RthJH 0.460 0.550 K/W Temperature under switching conditions Tvj op -40 150 °C
FF08MR12W1MA1_B11A Easy1BModule V3.1,2020-09-15Final Data Sheet 3Bodydiode 3.1MaximumRatedValues Parameter Conditions Symbol Value Unit DC body diode forward current Tvj = 175°C, VGS = -5 V ISD 60 ATH = 65°C Pulsed body diode current verified by design, tp limited by Tvjmax ISD pulse 300 A 3.2CharacteristicValues min. typ. max. Forward voltage ISD = 150 A VGS = -5 V VDSR 4.40 4.18 4.12 5.95 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Peak reverse recovery current ISD = 150 A, VGS = -5 V -diS/dt = 6.10 kA/µs VR = 600 V Irrm 75.0 135 158 A Tvj = 25°C Tvj = 125°C Tvj = 150°C Recovered charge ISD = 150 A, VGS = -5 V -diS/dt = 6.10 kA/µs VR = 600 V Qrr 2.58 4.10 5.13 µC Tvj = 25°C Tvj = 125°C Tvj = 150°C Reverse recovery energy ISD = 150 A, VGS = -5 V -diS/dt = 6.10 kA/µs VR = 600 V Erec 0.48 0.95 1.35 mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C 4NTC-Thermistor min. typ. max. Parameter Conditions Symbol Value Unit Ratedresistance TC = 25°C R25 5.00 kΩ DeviationofR100 TC = 100°C, R100 = 493 Ω ΔR/R -5 5 % Powerdissipation TC = 25°C P25 20.0 mW B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K Specificationaccordingtothevalidapplicationnote. 5Module Parameter Conditions Symbol Value Unit Isolationtestvoltage RMS, f = 0 Hz, t = 1sec VISOL 5.1 kV Internalisolation basicinsulation(class1,IEC61140) Al2O3 Creepagedistance terminaltoheatsink terminaltoterminal dCreep 11.5 8.0 mm Clearance terminaltoheatsink terminaltoterminal dClear 10.0 5.5 mm Comperativetrackingindex CTI > 200 min. typ. max. Strayinductancemodule LsCE 5.0 nH Moduleleadresistance,terminals-chip TC=25°C,perswitch RAA'+CC' 1.00 mΩ Storagetemperature Tstg -40 150 °C Mounting force per clamp F 20 - 50 N Weight G 24 g
FF08MR12W1MA1_B11A Easy1BModule V3.1,2020-09-15Final Data Sheet 6CharacteristicsDiagrams outputcharacteristicMOSFET(typical) ID=f(VDS) VGS=15V VDS [V] ID [A] 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 100 150 200 250 300 Tvj = 25°C Tvj = 125°C Tvj = 150°C outputcharacteristicMOSFET(typical) ID=f(VDS) Tvj=150°C VDS [V] ID [A] 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 100 150 200 250 300 VGS = 13 V VGS = 14 V VGS = 15 V VGS = 16 V transfercharacteristicMOSFET(typical) ID=f(VGS) VDS=20V VGS [V] ID [A] 100 150 200 250 300 Tvj = 25°C Tvj = 125°C Tvj = 150°C drainsourceon-resistanceMOSFET(typical) RDS(on)=f(Tj) VGS=15V;ID=150A Tj [°C] RDS(on) [Ohm] 100 125 150
FF08MR12W1MA1_B11A Easy1BModule V3.1,2020-09-15Final Data Sheet drainsourceon-resistanceMOSFET(typical) RDS(on)=f(Tj) VGS=15V ID [A] RDS(on) [Ohm] 100 150 200 250 300 Tvj = 25°C Tvj = 125°C Tvj = 150°C capacitycharacteristicMOSFET(typical) C=f(VDS) VGS=0V,Tvj=25°C,f=100kHz VDS [V] C [nF] 100 200 300 400 500 600 0,01 0,1 100 Ciss Coss Crss switchinglossesMOSFET(typical) Eon=f(ID),Eoff=f(ID) VGS=-5V/+15V,RGon=RGoff=5.1Ω ,VDS=600V ID [A] E [mJ] 100 150 200 250 300 Eon, Tvj = 150°C Eoff, Tvj = 150°C Eon, Tvj = 125°C Eoff, Tvj = 125°C switchinglossesMOSFET(typical) Eon=f(RG),Eoff=f(RG) VGS=-5V/+15V,ID=150A,VDS=600V RG [Ω ] E [mJ] Eon, Tvj = 150°C Eoff, Tvj = 150°C Eon, Tvj = 125°C Eoff, Tvj = 125°C
FF08MR12W1MA1_B11A Easy1BModule V3.1,2020-09-15Final Data Sheet transientthermalimpedanceMOSFET ZthJH=f(t)(typical) t [s] ZthJH [K/W] 0,001 0,01 0,1 0,01 0,1 Zth: Mosfet ri[K/W]: τi[s]: 0,028 0,001 0,082 0,021 0,256 0,167 0,094 0,637 forwardcharacteristicMOSFETbodydiode(typical) ISD=f(VSD) Tj=25°C VSD [V] ISD [A] 0,0 1,0 2,0 3,0 4,0 5,0 6,0 100 150 200 250 300 VGS = -5 V VGS = 0 V VGS = 15 V NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) TC [°C] R[Ω ] 100 120 140 160 100 1000 10000 100000 Rtyp
FF08MR12W1MA1_B11A Easy1BModule V3.1,2020-09-15Final Data Sheet 7Circuitdiagram T
FF08MR12W1MA1_B11A Easy 1B Module V3.1, 2020-09-15Final Data Sheet
8 Package outlines
Erstellt durch Genehmigt von Mat.-Nr.Werkstoff Modellreferenz inkl. Rev. Rev. Titel & Beschreibung Mabild Ausgabedatum Easy 1B sic dimpel Datenblatt D00135987 h Alle Rechte bei INFINEON TECHNOLOGIES AG , auch f¯r den Fall von Schutzrechtanmeldungen. A00135985_02 Blatt confidential Package Dokumentart Dokumentstatus Zeichnung Mabild eingefroren 15.05.2019bayerpetbayerpet Zeichnung DE 3.1 /DE 3.1 / Allgemeintoleranz nach ISO 2768 - mK Mastab 2 : 1 ISO 8015 principle of independency dimensions ISO 14405 GG target geometry according CAD file with general tolerances method of least-squares1 edges general tolerances surface DIN ISO 13715 1. DIN 16742-TG6 2. DIN ISO 2768-mk DIN EN ISO 1302 All dimensions refer to module in delivery condition Drawing: D000135987.02 TM Infineon TM EasyPIM Infineon FxxxRxxW1 xx GYYWW 0001 - Pin-Grid 3,2mm - Tolerance of PCB hole pattern - Hole secificatin for contacts see AN 2009-01 - Diameters of drill 1,15mm and copper thickness in hole 25-50qm L 0,1 12B0,35 16,4B0,5 1,3B0,2 03,26,412,8 1621,25 26,5 3,2 6,4 9,6 16 21,25 26,5 3,2 9,6 12,8 14,05 6,4 9,6 12,8 14,05 20,524 20,5 24 62,8B 0,5 48B 0,3 36,8B 0,2 42,5B 0,2 53B 0,1 41B 0,2 4,5 -0 19,4B0,2 16,4B0,2 28,1B0,2 33,8B0,3 92x P accordind to screw head/ washer 2,8 4x P PCB hole patternG1 S1 T1 T2 G2 S2 17,05 17,052 1 1 05 nochmal in Draufsicht nachgebessert bayerpet bayerpet 15.05.2019 04 Pindarstellung in Seitenansicht wieder eingeblendet bayerpet bayerpet 15.05.2019 03 Index 02 hinzu bayerpet bayerpet 15.05.2019 Revision |nderung Erstellt durch Genehmigt von Genehmigt am
FF08MR12W1MA1_B11A Easy 1B Module V3.1, 2020-09-15Final Data Sheet
9 Label Codes
9.1 Module Code
Standard IEC24720 and IEC16022 Code Content Content Module Serial Number Module Material Number Production Order Number Datecode (Production Year) Datecode (Production Week) Digit 1 - 5 6 - 11 12 - 19 20 - 21 22 - 23 Example (below) 71549 142846 55054991 Example 71549142846550549911530
9.2 Packing Code
Backend Construction Number Production Lot Number Serial Number Date Code Box Quantity Identifier X S Q Digit 2 - 9 12 - 19 21 - 25 28 - 31 33 - 34 Example (below) 95056609 2X0003E0 754389 1139 Example X950566091T2X0003E0S754389D1139Q15
FF08MR12W1MA1_B11A Easy 1B Module V3.1, 2020-09-15Final Data Sheet
Revision History
Major changes since previous revision Reference Date Description V1.0 2018-11-21 Target datasheet V1.1 2018-11-27 Correction of pin designation in circuit diagram V2.0 2019-08-13 Target datasheet 1.1, New data for preliminary datasheet V3.0 2020-03-25 Final datasheet V3.1 2020-09-15 Correction of Erec energy and du/dt value
FF08MR12W1MA1_B11A Easy 1B Module V3.1, 2020-09-15Final Data Sheet Terms & Conditions of usage Edition 2018-08-01 Published by Infineon Technologies AG
81726 Munich, Germany
© 2018 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (http://www.infineon.com) Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. These components are not designed for “special applications” that demand extremely high reliability or safety such as aerospace, defense or life support devices or systems (Class III medical devices). If you intend to use the components in any of these special applications, please contact your local representative at International Rectifier HiRel Products, Inc. or the Infineon support (https://www.infineon.com/support) to review product requirements and reliability testing. Infineon Technologies components may be used in special applications only with the express written approval of Infineon Technologies. Class III medical devices are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Trademarks Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last update 2011-11-11
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