FF06MR12A04MA2 INFINEON | Alldatasheet
Document overview
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Technical content
Features
- Electrical features - V DSS = 1200 V - I DN = 190 A / IDRM = 380 A - Low inductive design ≤ 8 nH - Low R DS,on - Low switching losses - Low Q g and Crss - New semiconductor material - silicon carbide - T vj,op = 175°C
- Mechanical features - 4.25 kV DC 1 second insulation - Compact design - High power density - AlN Substrate with low thermal resistance - Integrated NTC temperature sensor - RoHS compliant - UL 94 V0 module frame Potential applications
- Automotive applications
- (Hybrid) electrical vehicles (H)EV
- Motor drives Product validation
- Qualified according to IFX automotive standard
Description
external connection to be done Type Package Marking FF06MR12A04MA2 HybridPACK™ DSC S Module SP005558866 FF06MR12A04MA2 HybridPACK™ DSC S module Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 www.infineon.com 2024-08-05
HybridPACK™ DSC S module Table of contents Datasheet 2 Revision 1.00 2024-08-05
1 Package
Table 1 Insulation coordination Parameter Symbol Note or test condition Values Unit Isolation test voltage VISOL RMS, f = 0 Hz, t = 1 sec 4.25 kV Internal isolation basic insulation (class 1, IEC 61140) AlN Creepage distance dcreep terminal to heatsink 8.5 mm Creepage distance dcreep terminal to terminal 4.3 mm Clearance dclear terminal to heatsink 8.5 mm Clearance dclear terminal to terminal 3.4 mm Comparative tracking index CTI > 600 Table 2 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Stray inductance module Ls,DS 7.5 nH Module lead resistance, terminals - chip RDD'+SS' Th = 25 °C, per switch 0.45 mΩ Storage temperature Tstg -40 125 °C Weight G 30.9 g
2 MOSFET
Table 3 Maximum rated values Parameter Symbol Note or test condition Values Unit Drain-source voltage VDSS Tvj = 25 °C 1200 V DC drain current ID,nom VGS = 18 V, Tf = 43 °C Tvj,max = 175 °C 190 A Pulsed drain current ID,pulse verified by design, tp limited by Tvj,max 380 A Gate-source voltage, max. static voltage VGS -5/20 V Gate-source voltage, max. transient voltage VGS -10/23 V Table 4 Recommended values Parameter Symbol Note or test condition Values Unit On-state gate voltage VGS(on) 18 V Off-state gate voltage VGS(off) -5 V FF06MR12A04MA2 HybridPACK™ DSC S module Datasheet 3 Revision 1.00 2024-08-05
Table 5 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Drain-source on-resistance RDS,on ID = 190 A, VGS = 18 V Tvj = 25 °C 5.56 mΩ Tvj = 125 °C 8.78 Tvj = 175 °C 11.61 14.50 Gate threshold voltage1) VGS,th ID = 60 mA, VGS = VDS, (tested after 1ms pulse at VGS = +20 V) Tvj = 25 °C 3.25 3.90 4.55 V Total gate charge QG VDS = 850 V, VGS = -5/18 V 0.42 µC Internal gate resistor RG,int Tvj = 25 °C 0.9 Ω Input capacitance Ciss f = 100 kHz, VDS = 850 V Tvj = 25 °C 10.1 nF Output capacitance Coss f = 100 kHz, VDS = 850 V Tvj = 25 °C 0.43 nF Reverse transfer capacitance Crss f = 100 kHz, VDS = 850 V Tvj = 25 °C 0.04 nF COSS stored energy Eoss VDS = 850 V, VGS = -5/18 V Tvj = 25 °C 196 µJ Drain-source leakage current IDSX VGS = -5 V, VDSS = 1200 V Tvj = 25 °C 100 µA Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Tvj = 25 °C 100 nA Turn-on delay time, inductive load td,on ID = 190 A, RG,on = 5.1 Ω, VGS = -5/18 V, VDS = 850 V Tvj = 25 °C 32 ns Tvj = 125 °C 30 Tvj = 175 °C 29 Rise time (inductive load) tr ID = 190 A, RG,on = 5.1 Ω, VGS = -5/18 V, VDS = 850 V Tvj = 25 °C 25 ns Tvj = 125 °C 24 Tvj = 175 °C 23 Turn-off delay time, inductive load td,off ID = 190 A, RG,off = 12 Ω, VGS = -5/18 V, VDS = 850 V Tvj = 25 °C 228 ns Tvj = 125 °C 243 Tvj = 175 °C 251 Fall time (inductive load) tf ID = 190 A, RG,off = 12 Ω, VGS = -5/18 V, VDS = 850 V Tvj = 25 °C 53 ns Tvj = 125 °C 58 Tvj = 175 °C 62 Turn-on energy loss per pulse Eon ID = 190 A, RG,on = 5.1 Ω, VGS = -5/18 V, VDS = 850 V, Lσ = 10 nH Tvj = 25 °C, di/dt = 6.3 kA/µs 7.10 mJ Tvj = 125 °C, di/dt = 6.7 kA/µs 8.80 Tvj = 175 °C, di/dt = 6.8 kA/µs 9.90 (table continues...) FF06MR12A04MA2 HybridPACK™ DSC S module Datasheet 4 Revision 1.00 2024-08-05
Table 5 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Turn-off energy loss per pulse Eoff ID = 190 A, RG,off = 12 Ω, VGS = -5/18 V, VDS = 850 V, Lσ = 10 nH Tvj = 25 °C, dv/dt = 11.5 kV/µs 8.30 mJ Tvj = 125 °C, dv/dt = 11.3 kV/µs 8.80 Tvj = 175 °C, dv/dt = 11.1 kV/µs 9.10 Thermal resistance, junction to cooling fluid Rth,j-f 50% water / 50% ethylenglycol, clamping force F=800 N, ΔV/Δt = 10 dm³/min, Tf = 60 °C 0.2512) K/W Temperature under switching conditions Tvj,op -40 175 °C 1) At 0h operating time. During inverter operation the value can be lower depending on Tvj, VGS(off), (switching frequency) fsw over lifetime. For a final assessment of VGS,th Min. value depending on customer application please contact the Infineon sales office for the necessary technical support by Infineon. 2) Cooler design and characterization according to application notes AN-HPDSCSIC and AN-HPDSCRTH
3 Body diode (MOSFET)
Table 6 Maximum rated values Parameter Symbol Note or test condition Values Unit Drain-source voltage VDSS Tvj = 25 °C 1200 V DC body diode forward current IF,S Tvj,max = 175 °C, VGS = -5 V Tf = 45 °C 75 A Pulsed body diode current IF,S,pulse verified by design, tp limited by Tvj,max 380 A Table 7 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Forward voltage VF,SD IF,S = 190 A, VGS = -5 V Tvj = 25 °C 5.15 6.88 V Tvj = 125 °C 4.75 Tvj = 175 °C 4.60 Peak reverse recovery current Irrm IF,S = 190 A, VGS = -5 V, VR,DS = 850 V Tvj = 25 °C 43 A Tvj = 125 °C 73 Tvj = 175 °C 98 Recovered charge Qrr IF,S = 190 A, VGS = -5 V, VR,DS = 850 V Tvj = 25 °C 0.50 µC Tvj = 125 °C 2.40 Tvj = 175 °C 3.40 (table continues...) FF06MR12A04MA2 HybridPACK™ DSC S module Datasheet 5 Revision 1.00 2024-08-05
Table 7 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Reverse recovery energy Erec IF,S = 190 A, VGS = -5 V, VR,DS = 850 V Tvj = 25 °C, -di/dt = 7.8 kA/µs 0.1 mJ Tvj = 125 °C, -di/dt = 6.5 kA/µs 0.6 Tvj = 175 °C, -di/dt = 6.2 kA/µs 0.8
4 NTC-Thermistor
Table 8 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Rated resistance R25 TNTC = 25 °C 5 kΩ Deviation of R100 ΔR/R TNTC = 100 °C, R100 = 493 Ω -5 5 % Power dissipation P25 TNTC = 25 °C 20 mW B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298.15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298.15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298.15 K))] 3433 K FF06MR12A04MA2 HybridPACK™ DSC S module Datasheet 6 Revision 1.00 2024-08-05
5 Characteristics diagrams
Maximum allowed drain-source voltage, MOSFET VDSS = f(Tvj) Output characteristic (typical), MOSFET ID = f(VDS) VGS = 18 V -55 -30 -5 20 45 70 95 120 145 170 195 1000 1100 1200 1300 1400 -380 -340 -300 -260 -220 -180 -140 -100 -60 -20 100 140 180 220 260 300 340 380 Output characteristic (typical), MOSFET ID = f(VDS) Tvj = 25 °C Drain-source on-resistance (typical), MOSFET RDS,on = f(Tvj) ID = 190 A, VGS = 18 V 100 120 140 160 180 200 220 240 260 280 300 320 340 360 380 25 40 55 70 85 100 115 130 145 160 175 FF06MR12A04MA2 HybridPACK™ DSC S module Datasheet 7 Revision 1.00 2024-08-05
Drain-source on-resistance (typical), MOSFET RDS,on = f(ID) VGS = 18 V Transfer characteristic (typical), MOSFET ID = f(VGS) VDS = 20 V -380 -285 -190 -95 0 95 190 285 380 2 3 4 5 6 7 8 9 10 11 12 100 120 140 160 180 200 220 240 260 280 300 320 340 360 380 Gate charge characteristic (typical), MOSFET VGS = f(QG) VDD = 850 V, Tvj = 25 °C Capacity characteristic (typical), MOSFET C = f(VDS) f = 100 kHz, VGS = -5/18 V, Tvj = 25 °C 0 200 400 600 800 1000 1200 0.01 0.1 100 FF06MR12A04MA2 HybridPACK™ DSC S module Datasheet 8 Revision 1.00 2024-08-05
Switching losses (typical), MOSFET E = f(ID) VDS = 850 V, RG,off = 12 Ω, RG,on = 5.1 Ω, VGS = -5/18 V Switching losses (typical), MOSFET E = f(RG) ID = 190 A, VDS = 850 V, VGS = -5/18 V 0 40 80 120 160 200 240 280 320 360 0 5 10 15 20 25 30 35 40 Reverse bias safe operating area (RBSOA), MOSFET ID = f(VDS) RG,off = 12 Ω, VGS = 18/-5 V, Tvj = 175 °C Transient thermal impedance (typical), MOSFET Zth = f(t) ΔV/Δt = 10 dm³/min, Tf = 60 °C, fluid = 50% water / 50% ethylenglycol, clamping force F=800 N 0 200 400 600 800 1000 1200 1400 120 160 200 240 280 320 360 400 440 480 0.0001 0.001 0.01 0.1 1 10 0.001 0.01 0.1 FF06MR12A04MA2 HybridPACK™ DSC S module Datasheet 9 Revision 1.00 2024-08-05
Forward characteristic body diode (typical), MOSFET IF,S = f(VSD) Tvj = 25 °C Switching losses body diode (typical), MOSFET Erec = f(ISD) Vr = 850 V, RG,on = 5.1 Ω 0 1 2 3 4 5 6 7 100 120 140 160 180 200 220 240 260 280 300 320 340 360 380 0 40 80 120 160 200 240 280 320 360 0.000 0.150 0.300 0.450 0.600 0.750 0.900 1.050 1.200 1.350 Switching losses body diode (typical), MOSFET Erec = f(RG) Vr = 850 V, IF,S = 190 A Temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 0 5 10 15 20 25 30 35 40 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 20 40 60 80 100 120 140 160 100 1000 10000 100000 FF06MR12A04MA2 HybridPACK™ DSC S module Datasheet 10 Revision 1.00 2024-08-05
6 Circuit diagram
external connection to be done 1.) Notes: 2.) D1 has internal connection only to P1. P1 and P2 are not physically connected. 2.) 1.) Figure 1 FF06MR12A04MA2 HybridPACK™ DSC S module Datasheet 11 Revision 1.00 2024-08-05
7 Package outlines
HybridPACK™ DSC S module Datasheet 12 Revision 1.00 2024-08-05
2)3)3)Typ 110° Figure 3 FF06MR12A04MA2 HybridPACK™ DSC S module Datasheet 13 Revision 1.00 2024-08-05
8 Module label code
Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1 – 5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 Example Packing label code Code format Barcode Code128 Encoding Code Set A Symbol size 34 digits Standard IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Identifier X S Q Digit 2 – 9 12 – 19 21 – 25 28 – 31 33 – 34 Example 95056609 2X0003E0 754389 1139 Example X950566091T2X0003E0S754389D1139Q15 7154914284655054991153071549142846550549911530 Figure 4 FF06MR12A04MA2 HybridPACK™ DSC S module Datasheet 14 Revision 1.00 2024-08-05
Revision history
Document revision Date of release Description of changes 0.10 2021-11-29 Initial version 0.20 2023-05-04 Preliminary datasheet 1.00 2024-08-05 Final datasheet FF06MR12A04MA2 HybridPACK™ DSC S module Datasheet 15 Revision 1.00 2024-08-05
All referenced product or service names and trademarks are the property of their respective owners. Edition 2024-08-05 Published by Infineon Technologies AG
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© 2024 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-AAA933-003 Important notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Warnings Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.