FEP30XP-E3 VISHAY | Alldatasheet

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www.vishay.com Vishay General Semiconductor Revision: 23-Feb-16 1 Document Number: 88597 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dual Common Cathode Ultrafast Rectifier

FEATURES

  • Power pack
  • Glass passivated pellet chip junction
  • Ultrafast recovery time
  • Low switching losses, high efficiency
  • Low thermal resistance
  • High forward surge capability
  • Solder dip 260 °C, 40 s
  • Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, DC/DC converters, and other power switching application. MECHANICAL DATA Case: TO-247AD (TO-3P) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs max. PRIMARY CHARACTERISTICS IF(AV) 30 A VRRM

50 V, 100 V, 150 V, 200 V, 300 V,

400 V, 500 V, 600 V

trr 35 ns, 50 ns VF at IF = 15 A 0.95 V, 1.3 V, 1.5 V TJ max. 150 °C Package TO-247AD (TO-3P) Diode variations Dual common cathode TO-247AD (TO-3P) PIN 1 PIN 3 CASE PIN 2 MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL FEP 30AP FEP 30BP FEP 30CP FEP 30DP FEP 30FP FEP 30GP FEP 30HP FEP 30JP UNIT Maximum repetitive peak reverse voltage V RRM 50 100 150 200 300 400 500 600 V Maximum RMS voltage V RMS 35 70 105 140 210 280 350 420 V Maximum DC blocking voltage V DC 50 100 150 200 300 400 500 600 V Maximum average forward rectified current at TC = 100 °C IF(AV) 30 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode I FSM 300 A Operating storage and temperature range T J, TSTG -55 to +150 °C/W

www.vishay.com Vishay General Semiconductor Revision: 23-Feb-16 2 Document Number: 88597 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Thermal resistance from junction to case per diode mounted on heatsink ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL FEP 30AP FEP 30BP FEP 30CP FEP 30DP FEP 30FP FEP 30GP FEP 30HP FEP 30JP UNIT Maximum instantaneous forward voltage per diode 15.0 A V F 0.95 1.3 1.5 V Maximum DC reverse current at rated DC blocking voltage  per diode T C = 25 °C IR μA TC = 100 °C 500 Maximum reverse recovery time per diode I F = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 35 50 ns Typical junction capacitance per diode 4.0 V, 1 MHz C J 175 145 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL FEP 30AP FEP 30BP FEP 30CP FEP 30DP FEP 30FP FEP 30GP FEP 30HP FEP 30JP UNIT Typical thermal resistance per diode R JC (1) 1.0 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PAC KAGE CODE BASE QUANTITY DELIVERY MODE TO-247AD FEP30JP-E3/45 6.15 30 30/tube Tube

www.vishay.com Vishay General Semiconductor Revision: 23-Feb-16 3 Document Number: 88597 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 4 - Typical Reverse Leakage Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 0 50 100 150 Average Forward Current (A) Case Temperature (°C) Resistive or Inductive Load 1 10 100 100 150 200 250 300 Number of Cycles at 60 Hz Peak Forwar d Surge Current (A) TC = 100 °C 8.3 ms Single Half Sine-Wave 0.1 100 Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) 1.81.61.41.2 Pulse Width = 300 μs 1 % Duty Cycle TJ = 125 °C TJ = 25 °C

50 V to 200 V

300 V to 400 V

500 V to 600 V

Percent of Rated Peak Reverse Voltage (%) In stantaneou s Rever se Current (μA) 0.01 0.1 100 1000 10 20 30 40 50 60 70 80 90 100 TJ = 125 °C TJ = 100 °C TJ = 25 °C

300 V to 600 V

0.1 1 10 100 100 1000 Reverse Voltage (V) Junction Capacitance (pF) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p

50 V to 400 V

www.vishay.com Vishay General Semiconductor Revision: 23-Feb-16 4 Document Number: 88597 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) PIN 1 PIN 3 CASE PIN 2 TO-247AD (TO-3P) 0.245 (6.2) 0.225 (5.7) 0.645 (16.4) 0.313 (7.9) 0.142 (3.6) 0.138 (3.5) 0.170 (4.3) 0.086 (2.18) 0.076 (1.93) 0.160 (4.1) 0.140 (3.5) 0.225 (5.7) 0.205 (5.2) 0.127 (3.22) 0.117 (2.97) 0.048 (1.22) 0.044 (1.12) 0.795 (20.2) 0.775 (19.6) 0.840 (21.3) 0.820 (20.8) 1 2 3 0.078 (1.98) REF. 0.203 (5.16) 0.193 (4.90) 10° TYP. Both Sides 30° 10 1° REF. Both Sides 0.030 (0.76) 0.020 (0.51) 0.118 (3.0) 0.108 (2.7)

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