FEP16BTS THINKISEMI | Alldatasheet
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Technical content
Features
/hexstar2 Low forward voltage drop /hexstar2 Fast switching for high efficiency /hexstar2 High current capability /hexstar2 Case: Heatsink TO-220AB open metal package /hexstar2 High surge current capability /hexstar2 Weight: 2.2 gram approximately /hexstar2 Polarity: As marked on diode body method 208 /hexstar2 Mounting position: Any /hexstar2 Terminals: Solderable per MIL-STD-202 Mechanical Data /hexstar2 Low reverse leakage current (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case. /hexstar2 Epoxy: UL 94V-0 rate flame retardant TO-220AB/TO-220-3L Unit : inch (mm) FEP16BTS thru FEP16JTS Pb Free Plating Product FEP16BTS/FEP16DTS/FEP16FTS/FEP16GTS/FEP16HTS/FEP16JTS
16.0 Ampere Heatsink Dual Series Connection Ultra Fast Recovery Rectifiers
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/2 Application Pb -55 to + 150 SYMBOL V RRM V RMS V DC IF (AV) I FSM V F I R Trr C J T J , T STG 140 200 400 280 600 420 600 16.0 5.0 175 0.98 100 2.0 UNIT V V V V A A pF nS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Peak Forward Surge Current, 8.3ms single Maximum Instantaneous Forward Voltage Maximum DC Reverse Current @T J =25 Typical junction Capacitance (Note 2) Operating Junction and Storage Current T C =100 Half sine-wave superimposed on rated load (JEDEC method) @ 8.0 A At Rated DC Blocking Voltage @T J =125 Maximum Reverse Recovery Time (Note 1) Typical Thermal Resistance (Note 3) R JC Temperature Range FEP16BTS 200 400 1.3 1.7 /hexstar2 Automotive Inverters and Solar Inverters /hexstar2 Plating Power Supply,SMPS and UPS /hexstar2 Car Audio Amplifiers and Sound Device Systems Rev.09T .196(5.00) .054(1.39) .038(0.96) .419(10.66) .139(3.55) MIN .624(15.87) .269(6.85) .548(13.93) .50(12.7)MIN .177(4.5)MAX .226(5.75) .163(4.16) .045(1.15) .019(0.50) .025(0.65)MAX .1(2.54).1(2.54) .387(9.85) (Total Device 2x8A=16A) (Per Diode/Per Leg) μA μA /W℃ 150 Positive Negative Common Cathode Case Case Case Common Anode Suffix "T" Case Series Tandem Polarity Suffix "TA" Suffix "TS" Doubler Tandem Polarity Suffix "TD" FEP16DTS FEP16FTS FEP16GTS FEP16HTS FEP16JTS
FIG.1 - FORWARD CURRENT DERATING CURVE FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS AVERAGE FORWARD RECTIFIED CURRENT, AMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 0.1 0.01 0 50 100 150 CASE TEMPERATURE, o C INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES NUMBER OF CYCLES AT 60Hz 100 125 150 175 200 11 0 1 0 0 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 0.1 1000 100 20 40 60 80 100 FIG.5 - TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE, VOLTS 0.1 JUNCTION CAPACITANCE, pF 1000 1.0 4.0 10 100 100
60 Hz Resistive or
Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) T J =25 o C PULSE WIDTH=300uS 1% DUTY CYCLE T J =125 o C T J =25 o C T J = 25 o C f = 1.0 MHZ Vsig = 50mVp-p FEP16ETS/FEP16FTS/FEP16GTS FEP16ATS/FEP16BTS/FEP16CTS/FEP16DTS FEP16HTS/FEP16ITS/FEP16JTS © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/2Rev.09T FEP16BTS thru FEP16JTS