FEP16DTA THINKISEMI | Alldatasheet
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Technical content
Features
/hexstar2 Low forward voltage drop /hexstar2 Fast switching for high efficiency /hexstar2 and High current capability /hexstar2 Case: Molded plastic TO-220AB Heatsink /hexstar2 High surge current capability /hexstar2 Weight: 2.03 grams /hexstar2 Polarity:As marked on body method 208 /hexstar2 Mounting position: Any /hexstar2 Terminals: Solderable per MIL-STD-202 Mechanical Data /hexstar2 Low reverse leakage current R JC Temperature Range (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case. /hexstar2 Epoxy: UL 94V-0 rate flame retardant 150 TO-220AB Unit : inch (mm) "TA" Common Cathode Suffix "T" Common Anode Suffix "TD"Anode and Cathode Coexistence Suffix FEP16A thru FEP16J Pb Free Plating Product FEP16A thru FEP16J
16.0 Ampere Fast Efficient Plastic Half Bridge Rectifiers
© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 1/2 Application /hexstar2 Automotive Environment|DC Motor Control /hexstar2 Plating Power Supply|UPS|Inverter /hexstar2 Car Amplifier and Sound Device System etc.. .196(5.00) .054(1.39) .038(0.96) .419(10.66) .139(3.55) MIN .624(15.87) .269(6.85) .548(13.93) .50(12.7)MIN .177(4.5)MAX .226(5.75) .163(4.16) .045(1.15) .019(0.50) .025(0.65)MAX .1(2.54).1(2.54) .387(9.85) Pb Positive CT Negative CT Doubler Common Cathode Case Case Case Common Anode Series Connection Suffix "T" Suffix "TA" Suffix "TD" Glass passivated chip junction FEP16ATA FEP16ATD FEP16BT FEP16BTA FEP16BTD FEP16DT FEP16DTA FEP16DTD FEP16FT FEP16FTA FEP16FTD FEP16GT FEP16GTA FEP16GTD FEP16JT FEP16JTA FEP16JTD
FIG.1 - FORWARD CURRENT DERATING CURVE FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS AVERAGE FORWARD RECTIFIED CURRENT, AMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 0.1 1.0 0.01 0 50 100 150 CASE TEMPERATURE, o C INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES NUMBER OF CYCLES AT 60Hz 100 125 150 175 200 11 0 1 0 0 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 0.1 1000 100 20 40 60 80 100 FIG.5 - TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE, VOLTS 0.1 JUNCTION CAPACITANCE, pF 1000 1.0 4.0 10 100 100
60 Hz Resistive or
Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) T J =25 o C PULSE WIDTH=300uS 1% DUTY CYCLE T J =125 o C T J =25 o C T J = 25 o C f = 1.0 MHZ Vsig = 50mVp-p © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 2/2 FEP16A-FEP16D FEP16F-FEP16G FEP16J FEP16A thru FEP16J