FEN16BT THINKISEMI | Alldatasheet
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Technical content
Features
/hexstar2 Low forward voltage drop /hexstar2 Fast switching for high efficiency /hexstar2 High current capability /hexstar2 Case: Heatsink TO-220AB open metal package /hexstar2 High surge current capability /hexstar2 Weight: 2.2 gram approximately /hexstar2 Polarity: As marked on diode body method 208 /hexstar2 Mounting position: Any /hexstar2 Terminals: Solderable per MIL-STD-202 Mechanical Data /hexstar2 Low reverse leakage current (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case. /hexstar2 Epoxy: UL 94V-0 rate flame retardant TO-220AB/TO-220-3L Unit : inch (mm) FEN16BT thru FEN16JT Pb Free Plating Product FEN16BT/FEN16DT/FEN16FT/FEN16GT/FEN16HT/FEN16JT
16.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/2 Application Pb -55 to + 150 SYMBOL V RRM V RMS V DC IF (AV) I FSM V F I R Trr C J T J , T STG 140 200 400 280 600 420 600 16.0 5.0 175 0.98 100 2.0 UNIT V V V V A A pF nS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Peak Forward Surge Current, 8.3ms single Maximum Instantaneous Forward Voltage Maximum DC Reverse Current @T J =25 Typical junction Capacitance (Note 2) Operating Junction and Storage Current T C =100 Half sine-wave superimposed on rated load (JEDEC method) @ 8.0 A At Rated DC Blocking Voltage @T J =125 Maximum Reverse Recovery Time (Note 1) Typical Thermal Resistance (Note 3) R JC Temperature Range FEN16BT 200 400 1.3 1.7 /hexstar2 Automotive Inverters and Solar Inverters /hexstar2 Plating Power Supply,SMPS and UPS /hexstar2 Car Audio Amplifiers and Sound Device Systems Rev.09T .196(5.00) .054(1.39) .038(0.96) .419(10.66) .139(3.55) MIN .624(15.87) .269(6.85) .548(13.93) .50(12.7)MIN .177(4.5)MAX .226(5.75) .163(4.16) .045(1.15) .019(0.50) .025(0.65)MAX .1(2.54).1(2.54) .387(9.85) (Total Device 2x8A=16A) (Per Diode/Per Leg) μA μA /W℃ 150 Positive Negative Common Cathode Case Case Case Common Anode Prefix"FEP" Case Series Tandem Polarity Prefix"FEN" Prefix"FEE" Doubler Tandem Polarity Prefix"FED" FEN16DT FEN16FT FEN16GT FEN16HT FEN16JT
FIG.1 - FORWARD CURRENT DERATING CURVE FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS AVERAGE FORWARD RECTIFIED CURRENT, AMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 0.1 0.01 0 50 100 150 CASE TEMPERATURE, o C INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES NUMBER OF CYCLES AT 60Hz 100 125 150 175 200 11 0 1 0 0 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 0.1 1000 100 20 40 60 80 100 FIG.5 - TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE, VOLTS 0.1 JUNCTION CAPACITANCE, pF 1000 1.0 4.0 10 100 100
60 Hz Resistive or
Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) T J =25 o C PULSE WIDTH=300uS 1% DUTY CYCLE T J =125 o C T J =25 o C T J = 25 o C f = 1.0 MHZ Vsig = 50mVp-p FEN16ET/FEN16FT/FEN16GT FEN16AT/FEN16BT/FEN16CT/FEN16DT FEN16HT/FEN16IT/FEN16JT © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/2Rev.09T FEN16BT thru FEN16JT