FCX591 DGNJDZ | Alldatasheet

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OR (PNP)

FEATURES

MARKING:P1 Symbol Para meter Value Unit VCBO Coll ector-Base Voltage -80 V VCE O Coll ector-Emitter Voltage -60 V VEB O Emitter-Base V oltage -5 V IC Coll ector Current –Continuous -1 A PC Coll ector Power Dissipation 0.5 W Operation Junction and Storage Temperature Range ℃ TJ,Tstg -55~150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Co llector-base breakdown voltage V(B R)CBO IC= -100μA , IE=0 -80 V Co llector-emitter breakdown voltage V(B R)CEO* I C= -10mA , I B= 0 -60 V Emitter-b ase breakdown voltage V( BR)EBO IE= -100μA, IC=0 -5 V Co llector cut-off current ICB O V CB= -60 V , I E=0 -0 .1 μA Emitter cut-off current IEBO V EB=-4 V , I C=0 -0 .1 μA Collector- Emitter cut-off current ICE S V CE -60 V, IE=0 -0.1 μA DC cu rrent gain hFE* VCE=-5 V, IC= -1mA VCE=-5 V, IC= -500mA VCE=-5 V, IC= -1 A VCE=-5 V, IC= -2 A 100 100 300 Co llector-emitter saturation voltage VCE (sat) * IC= -500 mA, IB= -50mA IC=-1 A, IB= -100mA -0.3 -0.6 V Bas e-emitter saturation voltage VBE( sat) * IC=-1 A, IB= -100mA -1.2 V Base-emitter v oltage VBE* V CE=-5 V, IC= -1A -1 V T ransition frequency f T VCE= -10V, IC= - 50mA f =100MHz

150 MHz

llector output capacitance Cob V CB= -10V, f=1MHz 10 pF *Pulse wid th=300s. Duty cycle 2% SOT -89-3L . BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) S OT-89-3L Plastic-Encapsulate Transistors DONGGUAN NANJING ELECTRONICS LTD., 1/3Dongguan Nanjing Electronics Ltd. www.dgnjdz.com

M in Max Min Max A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e L 0.900 1.200 0.035 0.047 Symbol Dimensions In Millimeters Dimensions In Inches 1.550 REF. 0.061 REF. 1.500 TYP. 0.060 TYP. 3.000 TYP. 0.118 TYP. Dongguan Nanjing Electronics Ltd. www.dgnjdz.com

Dongguan Nanjing Electronics Ltd. www.dgnjdz.com