FCX589

FCX589 ZETEX | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 1

Technical content

SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR ISSUE 3 - OCTOBER 1995 ✪ PARTMARKING DETAIL – P89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL V ALUE UNIT Collector-Base Voltage V CBO -50 V Collector-Emitter Voltage V CEO -30 V Emitter-Base Voltage V EBO -5 V Peak Pulse Current I CM -2 A Continuous Collector Current I C -1 A Base Current I B -200 mA Power Dissipation at T amb=25°C P tot 1W Operating and Storage Temperature Range T j:Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Breakdown Voltages V (BR)CBO -50 V IC=-100 µA V(BR)CEO -30 V I C=-10mA* V(BR)EBO -5 V IE=-100 µA Collector Cut-Off Current I CBO -100 nA V CB=-30V Collector -Emitter Cut-Off Current ICES -100 nA V CES =-30V Emitter Cut-Off Current I EBO -100 nA V EB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.35 -0.65 VI C=-1A, I B=-100mA* IC=-2A, I B=-200mA* Base-Emitter Saturation Voltage VBE(sat) -1.2 V I C=-1A, I B=-100mA* Base-Emitter Turn-on Voltage VBE(on) -1.1 V I C=-1A, V CE=-2V* Static Forward Current Transfer Ratio hFE 100 100 300 I C=-1mA, V CE=-2V* IC=-500mA, V CE=-2V* IC=-1A, V CE=-2V* IC=-2A, V CE=-2V* Transition Frequency f T 100 MHz I C=-100mA, V CE=-5V f=100MHz Output Capacitance C obo 15 pF V CB=-10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical Characteristics graphs see FMMT549 datasheet FCX589 C B C E 3 - 91