FCX589 KEXIN | Alldatasheet
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PNP silicon planar medium. Power High Performance Transistor FCX589 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO -50 V Collector-emitter voltage V CEO -30 V Emitter-base voltage V EBO -5 V Peak pulse current I C -1 A Continuous collector current I CM -2 A Base current I B -200 mA Power dissipation P tot 1W Operating and storage temperature range T j,Tstg - 6 5t o+ 1 5 0
www.kexin.com.cn Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Breakdown Voltages V (BR)CBO IC=-100ìA -50 V Breakdown Voltages * V (BR)CEO IC=-10mA -30 V Breakdown Voltages V (BR)EBO IE=-100ìA -5 V Collector-base cut-off current I CBO VCB=-30V -100 nA Collector -Emitter Cut-Off Current I CES VCE=-30V -100 nA Emitter Cut-Off Current I EBO VEB=-4V -100 nA Collector-emitter saturation voltage * V CE(sat) IC=-1A, IB=-100mA IC=-2A, IB=-200mA -0.35 -0.65 V Base-emitter saturation voltage * V BE(sat) IC=-1A, IB=-100mA -1.2 V Base-Emitter Turn-on Voltage * V BE(on) IC=-1A, VCE=-2V -1.1 V IC=-1mA, VCE=-2V* 100 IC=-500mA, VCE=-2V* 100 300 IC=-1A, VCE=-2V* 80 IC=-2A, VCE=-2V* 40 Transitional frequency f T IC=-100mA, VCE=-5V f=100MHz 100 MHz Output capacitance C obo VCB=-10V, f=1MHz 15 pF * Pulse test: tp = 300 ìs; d0.02. hFEStatic Forward Current Transfer Ratio FCX589 Marking Marking P89