FCX493-HF COMCHIP | Alldatasheet

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Features

  • 100V VCEO. Mechanical data - Case: SOT-89, molded plastic. - Mounting position: Any. Junction and storage temperature range TJ ,TSTG -65 to +150 °C Power dissipation PD 1 W Peak pulse current - 1A continuous current. Circuit Diagram 1. Base 2. Emitter 3. Collector ICM 2 A SOT-89 Dimensions in inches and (millimeter) 0.185(4.70) 0.169(4.30) 0.171(4.35) 0.156(3.95) 0.071(1.80) 0.063(1.60) 0.104(2.65) 0.089(2.25) 0.043(1.10) 0.035(0.90) 0.067(1.70) 0.051(1.30) 0.063(1.60) 0.055(1.40) 0.020(0.50) 0.012(0.30) 0.020(0.50) 0.012(0.30) 0.023(0.58) 0.015(0.38) 1 3 2 Base current IB mA200 Collector Emitter Base

Electrical Characteristics (at TA=25°C unless otherwise noted) SymbolParameter Conditions Max Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Emitter cut-off current 100 V V V nA V(BR)CEO V(BR)CBO V(BR)EBO IEBO IC = 10mA, IB = 0 IC = 100μA, IE = 0 IE = 100μA, IC = 0 VCES = 100V Min 120 100 Collector-emitter cut-off current DC current gain 100 300 ICES hFE(1) VEB = 4V 100 hFE(2) 100 Collector cut-off current 100 ICBO VCB = 100V VCE = 10V, IC = 1mA VCE = 10V, IC = 250mA nA nA hFE(3) VCE = 10V, IC = 500mA 60 Collector-emitter saturation voltage 0.3 V VCE(sat)1 IC = 500mA, IB = 50mA VCE(sat)2 IC = 1A, IB = 100mA Base-emitter saturation voltage 1.15 VVBE(sat) Transition frequency fT VCE = 10V, IC = 50mA, f = 100MHz 150 MHz IC = 1A, IB = 100mA Base-emitter turn-on voltage Collector output capacitance Cob VBE(on) IC = 1A, VCE = 10V VCB = 10V, f = 1MHz V pF10 1.0 0.6 QW-JTR128 Page 2 REV:ACompany reserves the right to improve product design , functions and reliability without notice. Comchip Technology CO., LTD. Silicon Planar High Voltage Transistor hFE(4) VCE = 10V, IC = 1A 20 Typ

Rating and Characteristic Curves (FCX493-HF) Silicon Planar High Voltage Transistor QW-JTR128 Page 3 REV:ACompany reserves the right to improve product design , functions and reliability without notice. Comchip Technology CO., LTD. 1 10 100 10000 Collector-Emitter Saturation Voltage, VCE(sat) (V) 0.2 0.4 0.1 Fig.1 - VCE(sat) ― IC 0.3 1000 25°C IC/IB=10 IC/IB=50 Base-Emitter Turn-On Voltage, VBE(on) (V) 0.4 1.0 0.2 0.8 0.6 Fig.5 - VBE(on) ― IC 1 10 100 100001000 VCE=10V 25°C 100°C -55°C 1.1 280 160 Fig.3 - hFE ― IC Typical Gain, hFE 1 10 100 100001000 VCE=10V 25°C 100°C -55°C 120 200 240 1 10 100 10000 Fig.2 - VCE(sat) ― IC Collector-Emitter Saturation Voltage, VCE(sat) (V) 1000 0.2 0.4 0.1 0.3 IC/IB=10 25°C 100°C -55°C Base-Emitter Saturation Voltage, VBE(sat) (V) 0.4 1.0 0.2 0.8 0.6 Fig.4 - VBE(sat) ― IC 1 10 100 100001000 IC/IB=10 25°C 100°C -55°C 1.15 Collector Current, IC (mA) Collector Current, IC (mA) Collector Current, IC (mA) Collector Current, IC (mA) Collector Current, IC (mA)

Silicon Planar High Voltage Transistor QW-JTR128 Page 4 REV:ACompany reserves the right to improve product design , functions and reliability without notice. Comchip Technology CO., LTD. Reel Taping Specification o 120 DD1D2 SOT-89 SOT-89 4.85 ± 0.10 0.191 ± 0.004 0.175 ± 0.004 0.073 ± 0.004 1.50 ± 0.10 0.059 ± 0.004 180.00 ± 1.00 7.087 ± 0.039 60.00 ± 1.50 2.362 ± 0.059 0.512 ± 0.020 13.00 ± 0.50 SYMBOL (mm) (inch) (inch) (mm) SYMBOL A B C d D D1 W W1E F P TP1P0 A P F E W P0 P1 B Td C 0.292 ± 0.013 0.011 ± 0.001 12.00 + 0.30 − 0.10 0.472 + 0.012 − 0.004 16.40 ± 0.30 0.646 ± 0.012 Trailer Tape Leader Tape 25±1 Empty Pockets 50±1 Empty PocketsComponents

Silicon Planar High Voltage Transistor QW-JTR128 Page 5 REV:ACompany reserves the right to improve product design , functions and reliability without notice. Comchip Technology CO., LTD. Marking Code Marking CodePart Number FCX493-HF N93 N93 Suggested P.C.B. PAD Layout SOT-89 SIZE A (mm) (inch) C C D E E A A B 45° 45° B C D E 0.90 2.20 1.00 1.50 1.50 0.035 0.087 0.039 0.059 0.059 Standard Packaging SOT-89 Case Type REEL PACK REEL (pcs) Reel Size (inch) 71,000