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As Complementary Type of the PNP Transistor FCX593 is Recommended Low Saturation Voltage High Current Absolute Maximum Ratings (Ta=25℃ unless otherwise specified) Parameter Symbol Value Units Collector BaseVoltage VCBO 120 V Collector EmitterVoltage VCEO 100 V Emitter BaseVoltage VEBO 5 V Collector Current IC 1 A Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 StorageTemperatureRange Tstg - 55 to + 150 ℃ SOT-89 Thermal Characteristics Thermal Resistance,Junction-to-Ambient 250 ℃/WRθJA www.pingjingsemi.com Revison：1.0 May - 2019 Peak CollectorCurrent ICM 2 A
2 / 4www.pingjingsemi.com Revison：1.0 May - 2019 Electrical Characteristics (Ta=25℃unless otherwise specified) Parameter Symbol Min. Typ. Max. Units hFE 100 - - - 100 - 300 - 20 - - - Collector Base Cutoff Current at VCB = 100 V ICBO - - 0.1 μA Emitter Base Cutoff Current at VEB = 4 V IEBO - - 0.1 μA Collector Base Breakdown Voltage at IC = 100 µA V(BR)CBO 120 - - V Collector Emitter Breakdown Voltage at IC = 10 mA V(BR)CEO 100 - - V Emitter Base Breakdown Voltage at IE = 100 µA V(BR)EBO 5 - - V Collector Emitter Saturation Voltage at IC = 0.5 A, IB = 50 mA at IC = 1 A, IB = 100 mA VCE(sat) - - 0.3 V Base Emitter Voltage at VCE = 10 V, IC = 1 A VBE - - 1 V Transition Frequency at VCE = 10 V, IC = 50 mA, f = 100 MHz fT 150 - - MHz DC Current Gain at VCE = 10 V, IC = 1 mA at VCE = 10 V, IC = 250 mA at VCE = 10 V, IC = 500 mA at VCE = 10 V, IC = 1 A 60 - -- FCX493 NPN Transistor - - 0.6 Base Emitter Saturation Voltage at IC = 1 A, IB = 100 mA VBE(sat) V- - 1.1 Cob - - 10 pFOutput Capacitance at VCB = 10 V, f = 1 MHz
Typical Characteristic Curves www.pingjingsemi.com Revison：1.0 May - 2019 FCX493 NPN Transistor
Ordering information
FCX493 SOT-89 1000PCS/Reel&Tape www.pingjingsemi.com Revison：1.0 May - 2019 FCX493 NPN Transistor