FCX458 ZETEX | Alldatasheet
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Technical content
ISSUE 3 – OCTOBER 1995
FEATURES
- 400 Volt V CEO *P tot= 1 Watt COMPLEMENTARY TYPE – FCX558 PARTMARKING DETAIL – N58 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL V ALUE UNIT Collector-Base Voltage V CBO 400 V Collector-Emitter Voltage V CEO 400 V Emitter-Base Voltage V EBO 5V Continuous Collector Current I C 225 mA Peak Pulse Current I CM 500 mA Power Dissipation at T amb=25°C P tot 1W Operating and Storage Temperature Range T j:Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Breakdown Voltages V (BR)CBO 400 V IC=100 µA VCEO(sus) 400 V I C=10mA* V(BR)EBO 5V IE=100 µ A Collector Cut-Off Currents I CBO 100 nA V CB=320V ICES 100 nA V CE=320V Emitter Cut-Off Current I EBO 100 nA V EB=4V Emitter Saturation Voltages V CE(sat) 0.2 0.5 V V IC=20mA, I B=2mA* IC=50mA, I B=6mA* VBE(sat) 0.9 V I C=50mA, I B=5mA* Base-Emitter Turn On Voltage VBE(on) 0.9 V I C=50mA, V CE=10V* Static Forward Current Transfer Ratio hFE 100 100 300 I C=1mA, V CE=10V IC=50mA, V CE=10V* IC=100mA, V CE=10V** Transition Frequency f T 50 MHz I C=10mA, V CE=20V f=20MHz Collector-Base Breakdown Voltage Cobo 5p F V CB=20V, f=1MHz Switching times t on toff
135 Typical
2260 Typical
IC=50mA, V C=100V IB1=5mA, I B2=-10mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device For typical characteristics graphs see FMMT458 datasheet FCX458 3 - 85 C B C E