FCX458-HF COMCHIP | Alldatasheet

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  • 400V VCEO. Mechanical data - Case: SOT-89, molded plastic. - Mounting position: Any. - 225A continuous current. Maximum Ratings (at TA=25°C unless otherwise noted) Parameter Value Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-continuous VCBO VCEO VEBO IC 400 400 225 V V V mA Symbol Junction and storage temperature range TJ ,TSTG -65 to +150 °C Power dissipation PD 1 W Peak pulse current ICM 500 mA SOT-89 Dimensions in inches and (millimeter) 0.185(4.70) 0.169(4.30) 0.171(4.35) 0.156(3.95) 0.071(1.80) 0.063(1.60) 0.104(2.65) 0.089(2.25) 0.043(1.10) 0.035(0.90) 0.067(1.70) 0.051(1.30) 0.063(1.60) 0.055(1.40) 0.020(0.50) 0.012(0.30) 0.020(0.50) 0.012(0.30) 0.023(0.58) 0.015(0.38) 1 3 2 Circuit Diagram Collector Emitter Base 1. Base 2. Emitter 3. Collector

Electrical Characteristics (at TA=25°C unless otherwise noted) SymbolParameter Conditions Max Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Emitter cut-off current 100 V V V nA V(BR)CEO V(BR)CBO V(BR)EBO IEBO IC = 10mA, IB = 0 IC = 100μA, IE = 0 IE = 100μA, IC = 0 VCES = 320V Min 400 400 Collector-emitter cut-off current DC current gain 100 300 ICES hFE(1) VEB = 4V 100 hFE(2) 100 Collector cut-off current 100 ICBO VCB = 320V VCE = 10V, IC = 1mA VCE = 10V, IC = 50mA nA nA hFE(3) VCE = 10V, IC = 100A 15 Collector-emitter saturation voltage 0.2 V VCE(sat)1 IC = 20mA, IB = 2mA VCE(sat)2 IC = 50mA, IB = 6mA Base-emitter saturation voltage 0.9 VVBE(sat) Transition frequency fT VCE = 20V, IC = 10mA, f = 20MHz 50 MHz IC = 50mA, IB = 5mA Base-emitter turn-on voltage Collector output capacitance Cob VBE(on) IC = 50mA, VCE = 10V VCB = 20V, f = 1MHz V pF5 0.9 0.5 QW-JTR126 Page 2 REV:ACompany reserves the right to improve product design , functions and reliability without notice. Comchip Technology CO., LTD. Silicon Planar High Voltage Transistor

REV:ACompany reserves the right to improve product design , functions and reliability without notice. Comchip Technology CO., LTD. Silicon Planar High Voltage Transistor Rating and Characteristic Curves (FCX458-HF) Collector Current, IC (mA) Collector Current, IC (mA) 1000 Fig.1 - hFE ― IC DC Current Gain, hFE 1 10 100 1000 100 Base-Emitter Saturation Voltage, VBE(sat) (V) 0.4 1.0 0.2 0.8 0.6 Fig.2 - VBE(sat) ― IC 1 10 100 1000 VCE=10V 25°C 125°C -55°C 100°C 0.3 0.9 0.1 0.7 0.5 IC/IB=10 100°C 25°C -55°C 125°C Base-Emitter Turn-On Voltage, VBE(on) (V) 0.4 1.0 0.2 0.8 0.6 Fig.5 - VBE(on) ― IC 1 10 100 1000 VCE=10V Collector Current, IC (mA) 0.3 0.9 0.1 0.7 0.5 100°C 25°C -55°C 125°C 1 10 100 Collector-Emitter Saturation Voltage, VCE(sat) (V) 0.1 Fig.3 - VCE(sat) ― IC 1000 IC/IB=50 1 10 100 Fig.4 - VCE(sat) ― IC Collector-Emitter Saturation Voltage, VCE(sat) (V) 1000 Collector Current, IC (mA) Collector Current, IC (mA) 100 25°C 0.01 0.11 125°C 100°C 25°C -55°C IC/IB=10

REV:ACompany reserves the right to improve product design , functions and reliability without notice. Comchip Technology CO., LTD. Silicon Planar High Voltage Transistor Reel Taping Specification o 120 DD1D2 SOT-89 SOT-89 4.85 ± 0.10 0.191 ± 0.004 0.175 ± 0.004 0.073 ± 0.004 1.50 ± 0.10 0.059 ± 0.004 180.00 ± 1.00 7.087 ± 0.039 60.00 ± 1.50 2.362 ± 0.059 0.512 ± 0.020 13.00 ± 0.50 SYMBOL (mm) (inch) (inch) (mm) SYMBOL A B C d D D1 W W1E F P TP1P0 A P F E W P0 P1 B Td C 0.292 ± 0.013 0.011 ± 0.001 12.00 + 0.30 − 0.10 0.472 + 0.012 − 0.004 16.40 ± 0.30 0.646 ± 0.012 Trailer Tape Leader Tape 25±1 Empty Pockets 50±1 Empty PocketsComponents

REV:ACompany reserves the right to improve product design , functions and reliability without notice. Comchip Technology CO., LTD. Silicon Planar High Voltage Transistor Marking Code Marking CodePart Number FCX458-HF N58 N58 Suggested P.C.B. PAD Layout SOT-89 SIZE A (mm) (inch) C C D E E A A B 45° 45° B C D E 0.90 2.20 1.00 1.50 1.50 0.035 0.087 0.039 0.059 0.059 Standard Packaging SOT-89 Case Type REEL PACK REEL (pcs) Reel Size (inch) 71,000