FCX1151A ZETEX | Alldatasheet

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Technical content

(SWITCHING) TRANSISTOR ISSUE 1 - NOVEMBER 1998

FEATURES

  • 2W POWER DISSIPATION * 5A Peak Pulse Current * Excellent H FE Characteristics up to 5 Amps * Extremely Low Saturation Voltage E.g. 60mv Typ. * Extremely Low Equivalent On-resistance; R CE(sat) 66mΩ at 3A Complimentary Type - FCX1051A Partmarking Detail - 151 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -45 V Collector-Emitter Voltage V CEO -40 V Emitter-Base Voltage V EBO -5 V Peak Pulse Current I CM -5 A Continuous Collector Current I C -3 A Base Current I B -500 mA Power Dissipation at Tamb=25°C P tot 1 † 2 ‡ W W Operating and Storage Temperature Range T j:Tstg -55 to +150 °C † recommended P tot calculated using FR4 measuring 15x15x0.6mm ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices Refer to the handling instructions for soldering surface mount components. C B C E FCX1151A

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -45 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CES -40 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -40 V I C=-10mA Collector-Emitter Breakdown Voltage V(BR)CEV -40 V IC=-100µA, VEB=+1V Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA Collector Cut-Off Current I CBO -0.3 -100 nA V CB=-36V Emitter Cut-Off Current I EBO -0.3 -100 nA V EB=-4V Collector Emitter Cut-Off Current ICES -0.3 -100 nA V CE=-32V Collector-Emitter Saturation Voltage VCE(sat) -60 -120 -140 -200 -90 -180 -220 -300 mV mV mV mV I C=-0.1A, IB=-1.0mA* IC=-0.5A, IB=-5mA* IC=-1A, IB=-20mA* IC=-3A, IB=-250mA* Base-Emitter Saturation Voltage VBE(sat) -985 -1050 mV I C=-3A, IB=-250mA* Base-Emitter Turn-On Voltage VBE(on) -850 -950 mV I C=-3A, VCE=-2V* Static Forward Current Transfer Ratio hFE 270 250 180 100 450 400 300 190 800 I C=-10mA, VCE=-2V* IC=-0.5A, VCE=-2V* IC=-2A, VCE=-2V* IC=-3A, VCE=-2V* IC=-5A, VCE=-2V* Transition Frequency f T 145 MHz I C=-50mA, VCE=-10V f=50MHz Output Capacitance C cb 40 pF V CB=-10V, f=1MHz Switching Times t on 170 ns I C=-2A, IB=-20mA, VCC=-30V toff 460 ns IC=-2A, IB=±20mA, VCC=-30V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% FCX1151A

IC - Collector Current (A) VCE(sat) v IC IC/IB=50 IC/IB=100 IC/IB=200 +25°C -55°C +100°C IC - Collector Current (A) hFE v IC IC - Collector Current (A) VBE(on) v IC +100°C +150°C +25°C IC - Collector Current (A) VCE(sat) v IC +100°C +150°C +25°C IC - Collector Current (A) VBE(sat) v IC +25°C -55°C IC/IB=100 VCE=2V -55°C IC/IB=100 +25°C +150°C +100°C -55°C 0.1 0.2 0.3 0.4 10m 100m 1 10 10m 100m 1 10 0.1 0.2 0.3 0.4 200 400 600 800 10m 100m 1 10 10m 100m 1 10 0.2 0.4 0.6 0.8 1.0 0.6 0.3 0.9 10m 100m 1 10 100m 10 100 100ms DC 0.01 VCE - Collector Emitter Voltage (V) Safe Operating Area 10ms 1ms 0.1 0.1 1us TYPICAL CHARACTERISTICS