FCX1149A ZETEX | Alldatasheet

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Technical content

(SWITCHING) TRANSISTOR ISSSUE 1 - SEPTEMBER 1999

FEATURES

  • 2W POWER DISSIPATION * 20A Peak Pulse Current * Excellent H FE Characteristics up to 10 Amps * Extremely Low Saturation Voltage E.g. 45mv Typ. * Extremely Low Equivalent On-resistance; R CE(sat)67m/G01/G02 at 3A Partmarking Detail - 149 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -30 V Collector-Emitter Voltage V CEO -25 V Emitter-Base Voltage V EBO -5 V Peak Pulse Current I CM -10 A Continuous Collector Current I C -3 A Base Current I B -500 mA Power Dissipation at Tamb=25°C P tot 1 † 2 ‡ W W Operating and Storage Temperature Range T j:Tstg -55 to +150 °C † recommended P tot calculated using FR4 measuring 15x15x0.6mm ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. Measured under pulsed conditions. Pulse width=300/G01 s. Duty cycle /G02 2% Spice parameter data is available upon request for these devices. Refer to the handling instructions for soldering surface mount components. C B C E FCX1149A

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL VALUE UNIT CONDITIONS. MIN. TYP. MAX. Collector-Base Breakdown Voltage V(BR)CBO -30 V IC=-100/G01 A Collector-Emitter Breakdown Voltage V(BR)CES -25 V IC=-100/G01 A Collector-Emitter Breakdown Voltage V(BR)CEO -25 V I C=-10mA* Collector-Emitter Breakdown Voltage V(BR)CEV -25 V IC=-100/G01 A, VEB=+1V Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100/G01 A Collector Cut-Off Current I CBO -0.3 -100 nA V CB=-24V Emitter Cut-Off Current I EBO -0.3 -100 nA V EB=-4V Collector Emitter Cut-Off Current ICES -0.3 -100 nA V CES=-20V Collector-Emitter Saturation Voltage VCE(sat) -45 -100 -140 -200 -230 -80 -170 -240 -300 -350 mV mV mV mV mV I C=-0.1A, IB=-1mA* IC=-0.5A, IB=-3mA* IC=-1A, IB=-7mA* IC=-3A, IB=-100mA* IC=-4A, IB=-140mA* Base-Emitter Saturation Voltage VBE(sat) -930 -1050 mV I C=-3A, IB=-100mA* Base-Emitter Turn-On Voltage VBE(on) -840 -1000 mV I C=-3A, VCE=-2V* Static Forward Current Transfer Ratio hFE 270 250 150 115 450 400 260 190 800 I C=-10mA, VCE=-2V* IC=-0.5A, VCE=-2V* IC=-3.0A, VCE=-2V* IC=-5.0A, VCE=-2V* IC=-10.0A, VCE=-2V* Transition Frequency f T 135 MHz I C=-50mA, VCE=-10V f=50MHz Output Capacitance C cb 50 pF V CB=-10V, f=1MHz Switching Times t on 150 ns I C=-4A, IB=-40mA, VCC=-10V toff 270 ns IC=-4A, IB=/G03 40mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300/G01 s. Duty cycle /G02 2% FCX1149A

IC - Collector Current (A) VCE(sat) v IC 1.0 VCE(sat) - (V) IC/IB=10 IC/IB=50 IC/IB=100 +25°C -55°C hFE - Typical Gain 750 +100°C IC - Collector Current (A) hFE v IC +25°C +100°C VBE(on) - (V) 1.2 -55°C IC - Collector Current (A) VBE(on) v IC +100°C VCE(sat) - (V) 1.0 +25°C IC - Collector Current (A) VCE(sat) v IC +100°C VBE(sat) - (V) 1.6 0.8 +25°C IC - Collector Current (A) VBE(sat) v IC 100ms IC - Collector Current (A) DC 10m VCE - Collector Emitter Voltage (V) Safe Operating Area 10ms 1ms 100us VCE=2V +25°C -55°C IC/IB=100 VCE=2V -55°C IC/IB=100 10m 100m 1 10 0.2 0.4 0.6 0.8 IC/IB=200 10m 100m 1 10 0.2 0.4 0.6 0.8 10m 100m 1 10 250 500 10m 100m 1 10 0.4 0.8 10m 100m 1 10 0.4 1.2 11 0 100m TYPICAL CHARACTERISTICS