FCX1147A ZETEX | Alldatasheet

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Technical content

(SWITCHING) TRANSISTOR ISSSUE 1 - DECEMBER 1998

FEATURES

  • 2W POWER DISSIPATION * 20A Peak Pulse Current * Excellent H FE Characteristics up to 20 Amps * Extremely Low Saturation Voltage E.g. 25mv Typ. * Extremely Low Equivalent On-resistance; R CE(sat) 53mΩ at 3A Complimentary Type - FCX1047A Partmarking Detail - 147 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -15 V Collector-Emitter Voltage V CEO -12 V Emitter-Base Voltage V EBO -5 V Peak Pulse Current I CM -20 A Continuous Collector Current I C -3 A Base Current I B -500 mA Power Dissipation at Tamb=25°C P tot 1 † 2 ‡ W W Operating and Storage Temperature Range T j:Tstg -55 to +150 °C † recommended P tot calculated using FR4 measuring 15x15x0.6mm ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices. Refer to the handling instructions for soldering surface mount components. C B C E FCX1147A

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL VALUE UNIT CONDITIONS. MIN. TYP. MAX. Collector-Base Breakdown Voltage V(BR)CBO -15 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CES -12 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -12 V I C=-10mA Collector-Emitter Breakdown Voltage V(BR)CEV -12 V IC=-100µA, VEB=+1V Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA Collector Cut-Off Current I CBO -0.3 -10 nA V CB=-12V Emitter Cut-Off Current I EBO -0.3 -10 nA V EB=-4V Collector Emitter Cut-Off Current ICES -0.3 -10 nA V CES=-10V Collector-Emitter Saturation Voltage VCE(sat) -25 -70 -90 -115 -160 -250 -50 -110 -130 -170 -250 -400 mV mV mV mV mV I C=-0.1A, IB=-1mA* IC=-0.5A, IB=-2.5mA* IC=-1A, IB=-6mA* IC=-2A, IB=-20mA* IC=-3A, IB=-30mA* IC=-5A, IB=-50mA* Base-Emitter Saturation Voltage VBE(sat) -820 -1000 mV I C=-3A, IB=-30mA* Base-Emitter Turn-On Voltage VBE(on) -770 -950 mV I C=-3A, VCE=-2V* Static Forward Current Transfer Ratio hFE 270 250 200 200 150 450 400 340 300 245 145 850 I C=-10mA, VCE=-2V* IC=-0.5A, VCE=-2V* IC=-2.0A, VCE=-2V* IC=-3.0A, VCE=-2V* IC=-5.0A, VCE=-2V* IC=-10.0A, VCE=-2V* IC=-20.0A, VCE=-2V* Transition Frequency f T 115 MHz I C=-50mA, VCE=-10V f=50MHz Output Capacitance C cb 80 pF V CB=-10V, f=1MHz Switching Times t on 150 ns I C=-4A, IB=-40mA, VCC=-10V toff 220 ns IC=-4A, IB=−40mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% FCX1147A

IC - Collector Current (A) VCE(sat) v IC 2.0 IC/IB=50 IC/IB=100 IC/IB=200 +25 C -55 C 400 +100 C IC - Collector Current (A) hFE v IC +25°C +100°C 1.2 0.6 -55°C IC - Collector Current (A) VBE(on) v IC +100°C +150°C +25°C IC - Collector Current (A) VCE(sat) v IC +100°C +150°C 1.2 0.6 +25°C 0.2 IC - Collector Current (A) VBE(sat) v IC 100ms 100 DC 0.1 VCE - Collector Emitter Voltage (V) Safe Operating Area 10ms 1ms 100µs +175°C VCE=2V +25°C -55°C IC/IB=100 VCE=2V -55°C IC/IB=100 10m 100m 1 1.6 0.4 1.2 0.8 10 100101100m10m1m0 0.4 0.8 1.2 1.6 2.0 200 600 100101100m10m1m 100101100m10m1m 0.4 0.8 1.0 100101100m10m1m 0.2 0.4 0.8 1.0 FCX1147A TYPICAL CHARACTERISTICS