FCX1051A DIODES | Alldatasheet
Document overview
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- PDF pages: 6
Technical content
Features
- Very low saturation voltage H i g h g a i n Small outline package
Applications
Motor drive S t r o b e f l a s h MOSFET and IGBT gate driving DC -DC converters
Ordering information
(inches) Tape width (mm) Quantity per reel FCX1051ATA 7 12 1,000 C E B C E Pinout - top view C B
Issue 2 - July 2007 2 www.zetex.com © Zetex Semiconductors plc 2007 Absolute maximum ratings NOTES: (a) Measured under pulsed conditions. Pulse width=300 /H9262s. Duty cycle /H113492%. Spice parameter data is available upon request for these devices. Refer to the handling instructions for soldering surface mount components. (b) Recommended Ptot calculated using FR4 measuring 15x15x0.6mm. (c) Maximum power dissipation is calcul ated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. Typical characteristics Parameter Symbol Value Unit Collector-base voltage VCBO 150 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 5V Peak pulse current(a) ICM 10 A Continuous collector current IC 3A Power dissipation at Tamb = 25°C Ptot 1(b) W 2(c) W Operating and storage temperature range T j;Tstg -55 to +150 °C
Issue 2 - July 2007 3 www.zetex.com © Zetex Semiconductors plc 2007 Electrical characteristics (@ Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage V(BR)CBO 150 V IC = 100µA Collector-emitter breakdown voltage V CES 150 V I C = 100µA Collector-emitter breakdown voltage V CEO 40 V I C = 10mA Collector-emitter breakdown voltage V CEV 150 V I C =100µA, VEB = 1V Emitter-base breakdown voltage V (BR)EBO 5 V IE = 100µA Collector cut-off current I CBO 0.3 10 nA V CB = 120V Emitter cut-off current I EBO 0.3 10 nA VEB = 4V Collector emitter cut- off current I CES 0.3 10 nA V CES = 120V Collector-emitter saturation voltage V CE(sat) 17 25 mV IC = 0.2A, IB = 10mA (*) NOTES: (*) Measured under pulsed conditions. Pulse width=300/H9262s. Duty cycle /H113492%. 85 120 mV IC = 1A, IB = 10mA (*) 140 180 mV IC = 2A, IB = 20mA (*) 170 250 mV IC = 3A, IB = 40mA (*) 250 340 mV IC = 5A, IB = 100mA (*) Base-emitter saturation voltage V BE(sat) 880 1000 mV IC = 3A, IB = 40mA (*) Base-emitter turn-on voltage V BE(on) 840 950 mV IC = 3A, VCE = 2V (*) Static forward current transfer ratio h FE 290 440 1200 IC = 10mA, VCE = 2V (*) 270 450 IC = 1A, VCE = 2V (*) 270 360 IC = 3A, VCE = 2V (*) 130 220 IC = 5A, VCE = 2V (*) 40 55 IC = 10A, VCE = 2V (*) Transition frequency f T 155 MHz I C = 50mA, VCE = 10V f = 100MHz Output capacitance C obo 27 40 pF V CB = 10V, f = 1MHz Switching times t on 220 ns IC = 3A, IB = 30mA, VCC = 10V toff 540 ns I C = 3A, IB = 30mA, VCC = 10V
Issue 2 - July 2007 4 www.zetex.com © Zetex Semiconductors plc 2007 Typical characteristics IC - Collector Current (A) VCE(sat) - (V) VCE(sat) - (V)VBE(sat) - (V) hFE - Typical gainVBE(on) - (V) VCE(sat) v IC IC/IB=50 IC/IB=100 IC/IB=200 +25°C -55°C +100°C IC - Collector Current (A) hFE v IC IC - Collector Current (A) VBE(on) v IC +100°C +150°C +25°C IC - Collector Current (A) VCE(sat) v IC +100°C +150°C +25°C IC - Collector Current (A) VBE(sat) v IC +25°C -55°C IC/IB=100 VCE=2V -55°C IC/IB=100 +25°C +150°C +100°C -55°C 10m 100m 1 10 0.2 0.4 0.5 0.3 0.1 10m 100m 1 10 0.1 0.2 0.3 0.4 0.5 10m 100m 1 10 600 150 300 450 750 10m 100m 1 10 10m 100m 1 10 0.2 0.4 0.6 0.8 1.0 0.4 0.8 1.2 1.6
Issue 2 - July 2007 5 www.zetex.com © Zetex Semiconductors plc 2007 Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches DIM Millimeters Inches DIM Millimeters Inches Min Max Min Max Min Max Min Max D A C L EH E1 B e
Issue 2 - July 2007 6 www.zetex.com © Zetex Semiconductors plc 2007 Zetex sales offices Europe Zetex GmbH Kustermann-park Balanstraße 59 D-81541 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc
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Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com © 2007 Published by Zetex Semiconductors plc Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as desi gn ideas. It is the responsibility of the user to ensure that t he circuit is fit for the user’s application and meets with the user’s requirements. 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