FCX1051A ZETEX | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

(SWITCHING) TRANSISTOR ISSSUE 1 - DECEMBER 1998

FEATURES

  • 2W POWER DISSIPATION * 10A Peak Pulse Current * Excellent H FE Characteristics up to 10 Amps * Extremely Low Saturation Voltage E.g. 17mv Typ. * Extremely Low Equivalent On-resistance; R CE(sat) 57mΩ at 3A Complimentary Type - FCX1151A Partmarking Detail - 051 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 150 V Collector-Emitter Voltage V CEO 40 V Emitter-Base Voltage V EBO 5V Peak Pulse Current I CM 10 A Continuous Collector Current I C 3A Power Dissipation at Tamb=25°C P tot 1 † 2 ‡ W W Operating and Storage Temperature Range T j:Tstg -55 to +150 °C † recommended P tot calculated using FR4 measuring 15x15x0.6mm ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices. Refer to the handling instructions for soldering surface mount components. C B C E FCX1051A

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL Min Typ Max UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 150 V IC=100µA Collector-Emitter Breakdown Voltage VCES 150 V IC=100µA Collector-Emitter Breakdown Voltage VCEO 40 V I C=10mA Collector-Emitter Breakdown Voltage VCEV 150 V IC=100µA, VEB=1V Emitter-Base Breakdown Voltage V(BR)EBO 5V IE=100µA Collector Cut-Off Current I CBO 0.3 10 nA V CB=120V Emitter Cut-Off Current I EBO 0.3 10 nA V EB=4V Collector Emitter Cut-Off Current ICES 0.3 10 nA V CES=120V Collector-Emitter Saturation Voltage VCE(sat) 17 140 170 250 120 180 250 340 mV mV mV mV mV I C=0.2A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB=20mA* IC=3A, IB=40mA* IC=5A, IB=100mA* Base-Emitter Saturation Voltage VBE(sat) 880 1000 mV I C=3A, IB=40mA* Base-Emitter Turn-On Voltage VBE(on) 840 950 mV I C=3A, VCE=2V* Static Forward Current Transfer Ratio hFE 290 270 270 130 440 450 360 220 1200 I C=10mA, VCE=2V* IC=1A, VCE=2V* IC=3A, VCE=2V* IC=5A, VCE=2V* IC=10A, VCE=2V* Transition Frequency f T 155 MHz I C=50mA, VCE=10V f=100MHz Output Capacitance C obo 27 40 pF V CB=10V, f=1MHz Switching Times ton 220 ns I C=3A, IB=30mA, VCC=10V toff 540 ns IC=3A, IB=30mA, VCC=10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% FCX1051A

IC - Collector Current (A) VCE(sat) v IC IC/IB=50 IC/IB=100 IC/IB=200 +25°C -55°C +100°C IC - Collector Current (A) hFE v IC IC - Collector Current (A) VBE(on) v IC +100°C +150°C +25°C IC - Collector Current (A) VCE(sat) v IC +100°C +150°C +25°C IC - Collector Current (A) VBE(sat) v IC +25°C -55°C IC/IB=100 VCE=2V -55°C IC/IB=100 +25°C +150°C +100°C -55°C 10m 100m 1 10 0.2 0.4 0.5 0.3 0.1 10m 100m 1 10 0.1 0.2 0.3 0.4 0.5 10m 100m 1 10 600 150 300 450 750 10m 100m 1 10 10m 100m 1 10 0.2 0.4 0.6 0.8 1.0 0.4 0.8 1.2 1.6 100m 10 100 100ms DC 0.01 VCE - Collector Emitter Voltage (V) Safe Operating Area 10ms 1ms 100us 0.1 FCX1051A TYPICAL CHARACTERISTICS